2U and Al3U are formed at Al/DU interface by chemical reaction between Al and DU which induces chemical shift toward high binding energy of Al 2p and toward low binding energy of U 4f. Microdosages of O exist in Al over-layers as Al2O3, in Al/DU interface as Al2O3 and oxidation of uranium, and in DU layers as oxidation of uranium respectively. Just simple physical diffusion takes place at Au/DU interface. Binding energies of Au 4f and U 4f shift toward high-energy tail induced by cluster effect at the Au/DU interface. Microdosages of O exist at Au/DU interface and in DU layers as oxidation of uranium. Diffusion at the Al/DU interface is more obvious than at Au/DU surface. Under the condition of the same thickness valuses Al over-layer is more effective than Au over layer to protect uranium layer from oxidging."/>     Study on interface of Al/depleted uranium and Au/depleted uranium layers deposited by magnetron sputtering
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (10): 108101     doi:10.7498/aps.62.108101
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Study on interface of Al/depleted uranium and Au/depleted uranium layers deposited by magnetron sputtering
Yi Tai-Min, Xing Pi-Feng, Zheng Feng-Cheng, Mei Lu-Sheng, Yang Meng-Sheng, Zhao Li-Ping, Li Chao-Yang, Xie Jun, Du Kai, Ma Kun-Quan
Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
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