Effects of high pressure annealing technique on the structure, morphology and electric properties of 0.65PMN-0.35PT thin films
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin  2013, Vol. 62 Issue (13): 130704     doi:10.7498/aps.62.130704
GENERAL Current Issue| Archive| Adv Search  |   
Effects of high pressure annealing technique on the structure, morphology and electric properties of 0.65PMN-0.35PT thin films
Guo Hong-Li1, Yang Huan-Yin1, Tang Huan-Fang1, Hou Hai-Jun2, Zheng Yong-Lin1, Zhu Jian-Guo3
1. The Institute of Condensed Matter Physics, Yangtze Normal University, Chongqing 408100, China;
2. School of Materials Engineering, Yancheng Institute of Technology, Jiangsu 224051, China;
3. College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn