Rectifying behavior and photocarrier injection effect in BaTiO3/p-Si heterostructure

Yang Shi-Hai; Jin Ke-Xin; Wang Jing; Luo Bing-Cheng; Chen Chang-Le

doi:10.7498/aps.62.147305

Abstract

A good rectifying behavior is observed in a temperature range from 80 K to 300 K in the BaTiO3/p-Si heterostructure, which is fabricated by a pulse laser deposition. The diffusion voltage (VD) decreases with the increase of temperature. A significant photocarrier injection effect is also observed with light irradiation. The photocarrier injection effect increases with the energy of photon increasing. Meanwhile, R-T curve of the BaTiO3 film indicates that the oxygen-deficient BaTiO3 is an n-type semiconductor.

Keywords:

Authors and contacts

1.
Shaanxi Key Laboratory of Condensed Matter Structures and Properties, the Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education, Northwestern Polytechnical University, Xi'an 710072, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61078057, 51172183, 51202195), the Natural Science Foundation of Shaanxi Province, China (Grant Nos. 2011JM6013, 2012JQ8013), Aviation Foundation of China (Grant No. 2011ZF53065), and the NPU Foundation for Fundamental Research, China (Grant Nos. JC201155, JC20120246, JC20110270).

References

[1]	Roy D, Krupanidhi S B 1992 Appl. Phys. Lett. 61 2057
[2]	Ring K M, Kavanagh K L 2003 J. Appl. Phys. 94 5982
[3]	Hu Z G, Wang G S, Huang Z M, Meng X J, Chu J H 2003 Semicond. Sci. Technol. 18 449
[4]	Huang J Q, Hong X L, Han G R, Weng W J, Du P Y 2006 Acta Phys. Sin. 55 3664 (in Chinese) [黄集权, 洪秀兰, 韩高荣, 翁文剑, 杜丕一 2006 物理学报 55 3664]
[5]	Amy F, Wan A S, Kahn A, Walker F J, Mckee R A 2004 J. Appl. Phys. 96 1635
[6]	Kim S, Hishita S, Kang Y M, Balk S 1995 J. Appl. Phys. 78 5604
[7]	Hunter D, Lord K, Williams T M, Zhang K, Pradhan A K, Sahu D R, Huang J L 2006 Appl. Phys. Lett. 89 092102
[8]	Lee M B, Kawasaki M, Yoshimoto M, Koinuma H 1995 Appl. Phys. Lett. 66 1331
[9]	Li G Q, Lai P T, Zeng S H, Huang M Q, Liu B Y 1995 Appl. Phys. Lett. 66 2436
[10]	Hao L. Z, Xue Q. Z, Gao X L, Li Q, Zheng Q B, Yan K Y 2007 Appl. Phys. Lett. 91 212105
[11]	Xing J, Jin K J, Lu H B, He M, Liu G Z, Qiu J, Yang G Z 2008 Appl. Phys. Lett. 92 071113
[12]	Wang J Y, Chen C L, Gao G M, Han L A, Jin K X 2006 Acta Phys. Sin. 55 6617 (in Chinese) [王建元, 陈长乐, 高国棉, 韩立安, 金克新 2006 物理学报 55 6617]
[13]	Cardona M 1965 Phys. Rev. A 140 651
[14]	Berglund C N, Braun H J 1967 Phys. Rev. 164 790

Cited By

[1]	Roy D, Krupanidhi S B 1992 Appl. Phys. Lett. 61 2057
[2]	Ring K M, Kavanagh K L 2003 J. Appl. Phys. 94 5982
[3]	Hu Z G, Wang G S, Huang Z M, Meng X J, Chu J H 2003 Semicond. Sci. Technol. 18 449
[4]	Huang J Q, Hong X L, Han G R, Weng W J, Du P Y 2006 Acta Phys. Sin. 55 3664 (in Chinese) [黄集权, 洪秀兰, 韩高荣, 翁文剑, 杜丕一 2006 物理学报 55 3664]
[5]	Amy F, Wan A S, Kahn A, Walker F J, Mckee R A 2004 J. Appl. Phys. 96 1635
[6]	Kim S, Hishita S, Kang Y M, Balk S 1995 J. Appl. Phys. 78 5604
[7]	Hunter D, Lord K, Williams T M, Zhang K, Pradhan A K, Sahu D R, Huang J L 2006 Appl. Phys. Lett. 89 092102
[8]	Lee M B, Kawasaki M, Yoshimoto M, Koinuma H 1995 Appl. Phys. Lett. 66 1331
[9]	Li G Q, Lai P T, Zeng S H, Huang M Q, Liu B Y 1995 Appl. Phys. Lett. 66 2436
[10]	Hao L. Z, Xue Q. Z, Gao X L, Li Q, Zheng Q B, Yan K Y 2007 Appl. Phys. Lett. 91 212105
[11]	Xing J, Jin K J, Lu H B, He M, Liu G Z, Qiu J, Yang G Z 2008 Appl. Phys. Lett. 92 071113
[12]	Wang J Y, Chen C L, Gao G M, Han L A, Jin K X 2006 Acta Phys. Sin. 55 6617 (in Chinese) [王建元, 陈长乐, 高国棉, 韩立安, 金克新 2006 物理学报 55 6617]
[13]	Cardona M 1965 Phys. Rev. A 140 651
[14]	Berglund C N, Braun H J 1967 Phys. Rev. 164 790

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