E both before and after degradation, indicating that the leakage current is dominated by the Frenkel-Poole (FP) emission. The slope of log(IFT/E)-√E curve decreases after degradation, and the ‘hot spots’ corresponding to defects are directly observed by EMMI at the gate edge of the degraded device, suggesting that the degradation mechanism is: New defects are induced by high electric field in the AlGaN layer, and the increase of defect density leads to the increase of FP emission current.

"/>     Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (15): 157202     doi:10.7498/aps.62.157202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors
Ren Jian, Yan Da-Wei, Gu Xiao-Feng
Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China
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