Experimental characterization of polarization gain properties of 808nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (17): 174209     doi:10.7498/aps.62.174209
ELECTROMAGENTISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Current Issue| Archive| Adv Search  |   
Experimental characterization of polarization gain properties of 808nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets
Ma Ming-Lei1, Wu Jian1, Yang Mu1, Ning Yong-Qiang2, Shang Guang-Yi1
1. Department of Applied Physics, Beihang University, Beijing 100191, China;
2. State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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