Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN

Li Xiao-Jing; Zhao De-Gang; He Xiao-Guang; Wu Liang-Liang; Li Liang; Yang Jing; Le Ling-Cong; Chen Ping; Liu Zong-Shun; Jiang De-Sheng

doi:10.7498/aps.62.206801

Abstract

In this paper, we investigate the effect of annealing conditions on the characteristic of Ni/Au Ohmic contact to p-GaN. The specific contact resistivities under different annealing temperature and different annealing atmosphere are tested using the circular transmission line model. It is found that the best annealing temperature is about 500 ℃. The annealing atmosphere of nitrogen-oxygen gas mixture can lead to lower specific contact resistivity than that of pure nitrogen, and the specific contact resistivity has no relationship with the content of oxygen. Finally, we obtain the lowest specific contact resistivity to be 7.65×10-4 Ω·cm2 at the best annealing temperature and atmosphere.

Keywords:

Authors and contacts

1.
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Funds: Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 61176126), and the Cross-Discipline Foundation of Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-Discipline Foundation, China.

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Cited By

[1]	Mayes K, Yasan A, McClintock R, Shiell D, Darvish S R, Kung P, Razeghi M 2004 Appl. Phys. Lett. 84 1046
[2]	Li G, Cao Y, Xing H G, Jena D 2010 Appl. Phys. Lett. 97 222110
[3]	Butun B, Tut T, Ulker E, Yelboga T, Ozbay E 2008 Appl. Phys. Lett. 92 033507
[4]	Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 1268 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 物理学报 59 1268]
[5]	Fan Z, Mohammad S N, Kim W, Aktas Ö, Botchkarev A E, Morkoc H 1996 Appl. Phys. Lett. 68 1672
[6]	Ho J K, Jong C S, Chiu C C, Huang C N, Chen C Y, Shih K K 1999 Appl. Phys. Lett. 74 1275
[7]	Zhang A P, Luo B, Johnson J W, Ren F, Han J, Pearton S J 2001 Appl. Phys. Lett. 79 3636
[8]	Chary I, Chandolu A, Borisov B, Kuryatkov V, Nikishin S, Holtz M 2009 J. Electron. Mater. 38 545
[9]	Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T, Yang H 2010 Chin. Phys. B 19 017307
[10]	Chen L C, Chen F R, Kai J J, Chang L, Ho J K, Jong C S, Chiu C C, Huang C N, Chen C Y, Shih K K 1999 J. Appl. Phys. 86 3826
[11]	Ding Z B, Wang K, Chen T X, Chen D, Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese) [丁志博, 王坤, 陈田祥, 陈迪, 姚淑德 2008 物理学报 57 2445]
[12]	Qiao D, Yu L S, Lau S S, Lin J Y, Jiang H X, Haynes T E 2000 J. Appl. Phys. 88 4196
[13]	Smalc-Koziorowska J, Grzanka S, Litwin-Staszewska E, Piotrzkowski R, Nowak G, Leszczynski M, Perlin P, Talik E, Kozubowski J, Krukowski S 2010 Solid State Electron 54 701
[14]	Lin Y J 2005J. Vac. Sci. Technol. B 23 48
[15]	Gregory S, MARLOW, DAS M B 1982 Solid State Electron 25 91
[16]	Liday J, Hotový I, Sitter H, Vogrinčič P, Vincze A, Vávra I, Šatka A, Ecke G, Bonanni A, Breza J, Simbrunner C, Plochberger B 2007 J. Mater. Sci. Mater. Electron. 19 855
[17]	Greco G, Prystawko P, Leszczyński M, Nigro R L, Raineri V, Roccaforte F 2011 J. Appl. Phys. 110 123703

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Vol. 62, Issue 20 - 2013-10-20

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