Properties of δ doped GaAs/Al<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>As 2DEG with embedded InAs quantum dots
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (20): 207303     doi:10.7498/aps.62.207303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots
Wang Hong-Pei1 2, Wang Guang-Long1, Yu Ying2, Xu Ying-Qiang2, Ni Hai-Qiao2, Niu Zhi-Chuan2, Gao Feng-Qi1
1. Laboratory of Nanotechnology and Microsystems, Ordnance Engineering College, Shijiazhuang 050003, China;
2. National Laboratory for Superlattics and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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