-
Carbon-doped titanium monoxide films were successfully fabricated using CO2 as reactive gas by means of DC reactive magnetron sputtering. Phase tructure, composition and resistivity of the fabricated films were investigated by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and four point probe method. Results show that the fabricated film has a cubic phase structure, and the carbon element exists mainly as anion in the lattice of C-TiO. The resistivity of C-TiO is 52.2 μΩ·cm which is lower than that of pure TiO. Results of first principles calculation show that the Fermi levels of both TiO and C-TiO lie in their conduction bands, thus TiO and C-TiO have characteristics of metal conduction. Also the results of first principles calculation show that impurity levels of C 2p lie near the conduction band of C-TiO, which extend the width of conduction band and increase the density of states near the Fermi level of C-TiO, so the conductivity of C-TiO is larger than that of undoped TiO. The theoretical calculations are in agreement with experiment results.
-
Keywords:
- carbon-doped TiO /
- DC reactive magnetron sputtering /
- first principle /
- electronic structure
[1] Huang N, Yang P, Leng Y X, Chen J Y, Sun H, Wang J, Wan G J, Ding P D, Xi T F, Leng Y 2003 Biomaterials 24 2177
[2] Han F, Kambala V, Srinivasan M, Rajarathnam D, Naidu R 2009 Appl. Cata. A 359 25
[3] Linsebigler A L, Lu G Q, Yates J T 1995 Chem. Rev. 95 735
[4] Reintjes J, Schultz M B 1968 J. Appl. Phys. 39 5234
[5] Leary R, Westwood A 2011 Carbon 49 741
[6] Woan K, Pyrgiotakis G, Sigmund W 2009 Adv. Mater. 21 2233
[7] Yun H, Li J, Chen H B 2007 Electrochim. Acta 52 6679
[8] Xu L, Tang C Q, Qian J 2010 Acta. Phys. Sin. 59 2721 (in Chinese) [徐凌, 唐超群, 钱俊 2010 物理学报 59 2721]
[9] Hossain F M, Murch G E, Sheppard L 2007 Solid State Ionics 178 319
[10] Ma X G, Tang C Q, Yang X H 2007 J. Theor. Comput. Chem. 6 23
[11] Assim E M 2008 J. Alloys Compd. 465 1
[12] Chae G S, Soh H S, Lee W H, Lee J G 2001 J. Appl. Phys. 90 411
[13] Martev I N 2000 Vacuum 58 327
[14] Liu J B, Zhong H, Dai Y Y, Zhong H Y 2007 Chin. J. Rare Met. 31 70 (in Chinese) [刘继波, 钟晖, 戴艳阳, 钟海云 2007 稀有金属 31 70]
[15] Vershina A K, AgtevV A, Pleskachevskii I Y 1996 Fiz. Khim. Obrab. Mater. 5 45
[16] Wen F, Zhang C, Xie D, Sun H, Leng Y X 2013 Nucl. Instrum. Methods Phys. Res. Sect. B 307 381
[17] Leng Y X, Chen J Y, Wang J, Wan G J, Sun H, Yang P, Huang N 2006 Surf. Coat. Tech. 201 157
[18] Chen G S, Lee C C, Niu H, Huang W, Jannd R, Chttee T 2008 Thin Solid Films 516 8473
[19] Moulder J F, Stickle W F, Sool P E, Bomben K D 1992 Handbook of X-ray photoelectronspectroscopy (Perkin-Elmer, Eden Prairite)
[20] Cao Y, Li H L 1999 Acta. Phys. Chim. Sin. 15 895 (in Chinese) [曹亚, 李惠林 1999 物理化学学报 15 895]
[21] Zhang L, Koka R V 1998 Mater. Chem. Phys. 57 23
[22] Grigorov K G, Grigorov G I, Drajeva L, Bouchier D, Sporken R, Caudano R 1998 Vacuum 51 153
[23] Bartkowski S, Neumann M, Kurmaev E Z, Fedorenko V V, Shamin S N, Cherkashenko V M, Nemnonov S N, Winiarski A, Rubie D C 1997 Phys. Rev. B Condens. Matter 56 10656
[24] Yang K, Dai Y, Huang B 2009 J. Phys. Chem. C 113 2624
[25] Segall M D, LindanP J D, Probert M J 2002 J. Phys.: Condens. Matter 14 2717
[26] Hou Q Y, Zhao C W, Jin Y J 2009 Acta. Phys. Sin. 58 7136 (in Chinese) [侯清玉, 赵春旺, 金永军 2009 物理学报 58 7136]
[27] Liu E K, Zhu B S, Luo J S 1998 Semiconductor Physics (Xi’an: Xian Jiaotong University Press) p102 (in Chinese) [刘恩科, 朱秉升, 罗晋生 1998 半导体物理 (西安: 西安交通大学出版社) 第102页]
[28] Gao G Y, Hu L, Yao K L, Luo B, Liu N 2013 J. Alloys Compd. 551 539
-
[1] Huang N, Yang P, Leng Y X, Chen J Y, Sun H, Wang J, Wan G J, Ding P D, Xi T F, Leng Y 2003 Biomaterials 24 2177
[2] Han F, Kambala V, Srinivasan M, Rajarathnam D, Naidu R 2009 Appl. Cata. A 359 25
[3] Linsebigler A L, Lu G Q, Yates J T 1995 Chem. Rev. 95 735
[4] Reintjes J, Schultz M B 1968 J. Appl. Phys. 39 5234
[5] Leary R, Westwood A 2011 Carbon 49 741
[6] Woan K, Pyrgiotakis G, Sigmund W 2009 Adv. Mater. 21 2233
[7] Yun H, Li J, Chen H B 2007 Electrochim. Acta 52 6679
[8] Xu L, Tang C Q, Qian J 2010 Acta. Phys. Sin. 59 2721 (in Chinese) [徐凌, 唐超群, 钱俊 2010 物理学报 59 2721]
[9] Hossain F M, Murch G E, Sheppard L 2007 Solid State Ionics 178 319
[10] Ma X G, Tang C Q, Yang X H 2007 J. Theor. Comput. Chem. 6 23
[11] Assim E M 2008 J. Alloys Compd. 465 1
[12] Chae G S, Soh H S, Lee W H, Lee J G 2001 J. Appl. Phys. 90 411
[13] Martev I N 2000 Vacuum 58 327
[14] Liu J B, Zhong H, Dai Y Y, Zhong H Y 2007 Chin. J. Rare Met. 31 70 (in Chinese) [刘继波, 钟晖, 戴艳阳, 钟海云 2007 稀有金属 31 70]
[15] Vershina A K, AgtevV A, Pleskachevskii I Y 1996 Fiz. Khim. Obrab. Mater. 5 45
[16] Wen F, Zhang C, Xie D, Sun H, Leng Y X 2013 Nucl. Instrum. Methods Phys. Res. Sect. B 307 381
[17] Leng Y X, Chen J Y, Wang J, Wan G J, Sun H, Yang P, Huang N 2006 Surf. Coat. Tech. 201 157
[18] Chen G S, Lee C C, Niu H, Huang W, Jannd R, Chttee T 2008 Thin Solid Films 516 8473
[19] Moulder J F, Stickle W F, Sool P E, Bomben K D 1992 Handbook of X-ray photoelectronspectroscopy (Perkin-Elmer, Eden Prairite)
[20] Cao Y, Li H L 1999 Acta. Phys. Chim. Sin. 15 895 (in Chinese) [曹亚, 李惠林 1999 物理化学学报 15 895]
[21] Zhang L, Koka R V 1998 Mater. Chem. Phys. 57 23
[22] Grigorov K G, Grigorov G I, Drajeva L, Bouchier D, Sporken R, Caudano R 1998 Vacuum 51 153
[23] Bartkowski S, Neumann M, Kurmaev E Z, Fedorenko V V, Shamin S N, Cherkashenko V M, Nemnonov S N, Winiarski A, Rubie D C 1997 Phys. Rev. B Condens. Matter 56 10656
[24] Yang K, Dai Y, Huang B 2009 J. Phys. Chem. C 113 2624
[25] Segall M D, LindanP J D, Probert M J 2002 J. Phys.: Condens. Matter 14 2717
[26] Hou Q Y, Zhao C W, Jin Y J 2009 Acta. Phys. Sin. 58 7136 (in Chinese) [侯清玉, 赵春旺, 金永军 2009 物理学报 58 7136]
[27] Liu E K, Zhu B S, Luo J S 1998 Semiconductor Physics (Xi’an: Xian Jiaotong University Press) p102 (in Chinese) [刘恩科, 朱秉升, 罗晋生 1998 半导体物理 (西安: 西安交通大学出版社) 第102页]
[28] Gao G Y, Hu L, Yao K L, Luo B, Liu N 2013 J. Alloys Compd. 551 539
Catalog
Metrics
- Abstract views: 4925
- PDF Downloads: 943
- Cited By: 0
下载:
