Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (19): 196104     doi:10.7498/aps.62.196104
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Archive| Adv Search  |   
Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates
Sun Ya-Bin1 2, Fu Jun1 2, Xu Jun1 2, Wang Yu-Dong1 2, Zhou Wei1 2, Zhang Wei1, Cui Jie1, Li Gao-Qing1, Liu Zhi-Hong1 2
1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
2. Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China
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