Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates
Sun Ya-Bin1 2, Fu Jun1 2, Xu Jun1 2, Wang Yu-Dong1 2, Zhou Wei1 2, Zhang Wei1, Cui Jie1, Li Gao-Qing1, Liu Zhi-Hong1 2
1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China; 2. Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China
Abstract Ionizing radiation effects in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) at different dose rates were investigated. Experimental results show that the base current increases with increasing accumulated dose for the high and low dose rates of irradiation, causing a significant drop in current gain. Besides, the lower the dose rate, the higher the radiation damage, which demonstrates a significantly enhanced low-date-rate sensitivity (ELDRS) effect in the SiGe HBTs. The different degradation behaviors for high and low dose rates of irradiation are compared with each other and discussed; furthermore, the underlying physical mechanisms are analyzed and investigated in detail.
Sun Ya-Bin,Fu Jun,Xu Jun et al. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Phys. Sin, 2013, 62(19): 196104.
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2013, Vol. 62 
