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To meet the demands of high efficient silicon thin film solar cells, transparent conductive hydrogenated Mg and Ga co-doped ZnO (HMGZO) thin films were deposited via pulsed direct current (DC) magnetron sputtering on glass substrates at a substrate temperature of 553 K. The micro-structural, morphological, electrical, and optical properties of HMGZO thin films were investigated at various H2 flow rates. Experimental results show that all the HMGZO thin films are polycrystalline with a hexagonal wurtzite structure exhibiting a preferred (002) crystal plane orientation. Appropriate H2 flow rate increases grain size and also enhances the RMS roughness. The deposition rate of HMGZO films decreases with the increase of H2 flow rate due to the decrease of sputtering yield. Resistivity of HMGZO thin films decreases rapidly from 117 to 7.2×10-3 Ω·cm with increasing H2 flow rate from 0 to 4.0 sccm. With further increasing H2 flow rate (4.0–16.0 sccm), the resistivity increases slightly due to the reduced carrier concentration and excessive H atoms as impurity. Optical transmittance of all the HMGZO thin films is higher than 87.7% in the wavelength range from 320 to 1100 nm. Burstein-Moss band-filling determined by carrier concentrations and the incorporation of Mg atoms together contribute to the band-gap (Eg) widening phenomenon. The band gap Eg varies from ～ 3.49–3.70 eV and the maximum Eg of 3.70 eV is obtained at a H2 flow rate of 16.0 sccm.
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Keywords:
- magnetron sputtering /
- Mg and Ga co-doping /
- H2 introduction /
- band gap widening
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[2] Li H, Wang N, Liu X 2008 Opt. Express 16 194
[3] Mller J, Rech B, Springer J, Vanecek M 2004 Sol. Energy 77 917
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[27] Zhang X D, Guo M L, Liu C L, Zhang L A, Zhang W Y, Ding Y Q, Wu Q, Feng X 2008 Eur. Phys. J. B 62 417
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[1] Burroughes J H, Bradley D D C, Brown A R, Marks R N, Mackay K, Friend R H, Burns P L, Holmes A B 1990 Nature 347 539
[2] Li H, Wang N, Liu X 2008 Opt. Express 16 194
[3] Mller J, Rech B, Springer J, Vanecek M 2004 Sol. Energy 77 917
[4] Yu X M, Zhao J, Hou G F, Zhang J J, Zhang X D, Zhao Y 2013 Acta Phys. Sin. 62 120101 (in Chinese) [于晓明, 赵静, 侯国付, 张建军, 张晓丹, 赵颖 2013 物理学报 62 120101]
[5] Wang G H, Zhao L, Yan B J, Chen J W, Wang G, Diao H W, Wang W J 2013 Chin. Phys. B 22 68102
[6] Fan H B, Zheng X L, Wu S C, Liu Z G, Yao H B 2012 Chin. Phys. B 21 38101
[7] Zhang C, Cheng X L, Wang F, Yan C B, Huang Q, Zhao Y, Zhang X D, Geng X H 2012 Acta Phys. Sin. 61 238101 [张翅, 陈新亮, 王斐, 闫聪博, 黄茜, 赵颖, 张晓丹, 耿新华 2012 物理学报 61 238101]
[8] Moss T S 1954 Proc. Phys. Soc. Sect. B 67 775
[9] Burstein E 1954 Phys. Rev. 93 632
[10] Wang F, Chen X L, Geng X H, Zhang D K, Wei C C, Huang Q, Zhang X D, Zhao Y 2012 Appl. Surf. Sci. 258 9005
[11] Jang S H, Chichibu S F 2012 J. Appl. Phys. 112 073503
[12] Shin S W, Kim I Y, Lee G H, Agawane G L, Mohokar A V, Heo G S, Kim J H, Lee J Y 2011 Cryst. Growth Des. 11 4819
[13] Gu X, Zhu L, Ye Z, Ma Q, He H, Zhang Y, Zhao B 2008 Sol. Energy Mater. Sol. Cells 92 343
[14] Matsubara K, Tampo H, Shibata H, Yamada A, Fons P, Iwata K, Niki S 2004 Appl. Phys. Lett. 85 1374
[15] Cohen D J, Ruthe K C, Barnett S A 2004 J. Appl. Phys. 96 459
[16] Duenow J N, Gessert T A, Wood D M, Young D L, Coutts T J 2008 J. Non-cryst. Solids. 354 2787
[17] Park Y R, Kim J, Kim Y S 2009 Appl. Surf. Sci. 255 9010
[18] Van De Walle C G 2000 Phys. Rev. Lett. 85 1012
[19] Van De Walle C G, Neugebauer J 2003 Nature 423 626
[20] Janotti A, Van De Walle C G 2007 Nature Mater. 6 44
[21] Lavrov E V, Börrnert F, Weber J 2006 Physica B 376-377 694
[22] Shi G A, Stavola M, Pearton S J, Thieme M, Lavrov E V, Weber J 2005 Phys. Rev. B 72 195211
[23] Zhou Z, Kato K, Komaki T, Yoshino M, Yukawa H, Morinaga M 2004 Int. J. Hydrogen Energ 29 323
[24] Tark S J, Ok Y W, Kang M G, Lim H J, Kim W M, Kim D 2009 J. Electroceram. 23 548
[25] Song D, Aberle A G, Xia J 2002 Appl. Surf. Sci. 195 291
[26] Prasada Rao T, Santhosh Kumar M C, Sooraj Hussain N 2012 J. Alloy. Compd. 541 495
[27] Zhang X D, Guo M L, Liu C L, Zhang L A, Zhang W Y, Ding Y Q, Wu Q, Feng X 2008 Eur. Phys. J. B 62 417
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