Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors
Acta Physica Sinica
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Acta Phys. Sin  2014, Vol. 63 Issue (4): 047202     doi:10.7498/aps.63.047202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors
Gu Wen-Ping1 2, Zhang Lin1, Li Qing-Hua1, Qiu Yan-Zhang1, Hao Yue2, Quan Si1, Liu Pan-Zhi1
1. School of Electronic and Control Engineering, Chang'an University, Xi'an 710064, China;
2. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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