Effect of defect on the programming speed of charge trapping memories
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin  2014, Vol. 63 Issue (5): 053101     doi:10.7498/aps.63.053101
ATOMIC AND MOLECULAR PHYSICS Current Issue| Archive| Adv Search  |   
Effect of defect on the programming speed of charge trapping memories
Wang Jia-Yu, Zhao Yuan-Yang, Xu Jian-Bin, Dai Yue-Hua
1. School of Electronics and Information Engineering, Anhui University, Hefei 230039, China
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn