Effect of temperature and external magnetic field on the structure of electronic state of the Si-uniformlly-doped GaAs quantum well
Acta Physica Sinica
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Acta Phys. Sin  2014, Vol. 63 Issue (5): 057301     doi:10.7498/aps.63.057301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Effect of temperature and external magnetic field on the structure of electronic state of the Si-uniformlly-doped GaAs quantum well
Yang Shuang-Bo
School of Physical Science and Technology Nanjing Normal University, Nanjing 210023, China
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