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A STUDY OF THE RAMAN SCATTERING OF Ge NANOCRYSTALLITES EMBEDDED IN SiO2 THIN FILMS

YUE LAN-PING HE YI-ZHEN

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A STUDY OF THE RAMAN SCATTERING OF Ge NANOCRYSTALLITES EMBEDDED IN SiO2 THIN FILMS

YUE LAN-PING, HE YI-ZHEN
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  • Raman scattering of Ge nanocrystallites from 4 to 16nm is size, embedded in SiO2 thin films has been studied. The Ge-SiO2 samples were prepared by ion-beam sputtering and a post-annealing technique. A red shift and broadening of the Raman peak observed with decreasing the size of Ge particles are in good agreement with the calculated results based on the phonon confinement theory. Effects of the surface and interface of the Ge-nanocrystallites on Raman spectra have also been investigated.
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  • Abstract views:  6770
  • PDF Downloads:  1080
  • Cited By: 0
Publishing process
  • Received Date:  31 August 1995
  • Accepted Date:  04 October 1995
  • Published Online:  05 May 1996

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