Research progress of substrate materials used for GaN-Based light emitting diodes

Chen Wei-Chao; Tang Hui-Li; Luo Ping; Ma Wei-Wei; Xu Xiao-Dong; Qian Xiao-Bo; Jiang Da-Peng; Wu Feng; Wang Jing-Ya; Xu Jun

doi:10.7498/aps.63.068103

Abstract

GaN-based light emitting diodes (LEDs) as the third generation of lighting devices, have been rapidly developed in recent years. Substrate materials, serving as the LED manufacturing basis, have great influences on the production and application of LED. The critical characteristics of substrate affecting the design and fabrication of LED are its crystal structure, thermal expansion coefficient, thermal conductivity, optical transmittance, and electrical conductivity. In this paper, we compare several common substrate materials, namely, sapphire, silicon carbide, silicon, gallium nitride and gallium oxide, review the research progress of the substrate materials in the aspects of high quality epitaxial growths, high performance device designs and preparations of substrates, and comment on their further development.

Keywords:

Authors and contacts

1.
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
2.
University of Chinese Academy of Sciences, Beijing 100049, China
Funds: Project supported by the Shanghai Committee of Science and Technology, China (Grant No. 13521102700) and the National Natural Science Foundation of China (Grant No. 61177037).

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Cited By

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[4]	Xu G Z, Liang H, Bai Y Q, Liu J M, Zhu X 2005 Acta Phys. Sin. 54 5344 (in Chinese) [徐耿钊, 梁琥, 白永强, 刘纪美, 朱星2005 物理学报 54 5344]
[5]	Xing Y H, Han J, Deng J, Li J J, Xu C, Sheng G D 2010 Acta Phys. Sin. 59 1233 (in Chinese) [邢艳辉, 韩军, 邓军, 李建军, 徐晨, 沈光地 2010 物理学报 59 1233]
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[8]	Tadatomo K, Okagawa H, Ohuchi Y, Tsunekawa T, Imada Y, Kato M, Taguchi T 2001 Jpn. J. Appl. Phys. 40 L583
[9]	Pimputkar S, Speck J S, DenBaars S P, Nakamura S 2009 Nat. Photon. 3 180
[10]	Li B Q, Liu Y H, Feng Y C 2008 Acta Phys. Sin. 57 477 (in Chinese) [李炳乾, 刘玉华, 冯玉春 2008 物理学报 57 477]
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