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Influence and mechanism of H2 in the epitaxial growth of ZnO using metal-organic chemical vapor deposition method

Zhu Shun-Ming Gu Ran Huang Shi-Min Yao Zheng-Grong Zhang Yang Chen Bin Mao Hao-Yuan Gu Shu-Lin Ye Jian-Dong Zheng You-Dou

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Influence and mechanism of H2 in the epitaxial growth of ZnO using metal-organic chemical vapor deposition method

Zhu Shun-Ming, Gu Ran, Huang Shi-Min, Yao Zheng-Grong, Zhang Yang, Chen Bin, Mao Hao-Yuan, Gu Shu-Lin, Ye Jian-Dong, Zheng You-Dou
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  • This paper focuses on the influence and mechanism of H2 in the eptaxial growth of ZnO using metal-organic chemical vapor deposition method. Studies show that hydrogen has a significant influence on the structure and properties of ZnO films. Hydrogen produces a mainly negative impact on crystal quality, surface structure, and optical properties of ZnO films when tert-butanol (t-BuOH) is used as the O sources. Raman scattering shows that hydrogen has a very good effect on the suppression of carbon contamination. When nitrous oxide is used as the O sources, the surface of ZnO films becomes smooth, and the crystal quality and optical property are improved. It is shown that hydrogen can play a positive role when N2O is used as O source. In this paper we highly estimate hydrogen's ability of reducing the surface growth energy, improving the migration of the surface atoms and the corrosion effect on the surface. Studies show that the optimization of hydrogen has a significant effect during the epitaxial growth of ZnO using the MOCVD method.
    • Funds: Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61025020, 60990312, 61274058),the Basic Research Program of Jiangsu Province, China (Grant No. BK2011437), and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.
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    Shibata N, Uemura T, Yamaguchi H, Yasukawa T 2003 Phys. Status Solidia 200 58

    [2]

    He T, Xia Y J, Qin H C, Guan Z S, Li W Y 2011 Physics 40 580 (in Chinese) [贺涛, 夏玉静, 秦洪春, 管自生, 李伟英 2011 物理 40 580]

    [3]

    Duan L, Lin B X, Fu Z X 2003 Physics 32 27 (in Chinese) [段理, 林碧霞, 傅竹西2003 物理 32 27]

    [4]

    Minegishi K, Koiwai Y, Kikuchi K 1997 Japan J. Appl. Phys 36 L 1453

    [5]

    Yang Y T, Wu J, Ding R X, Song J X, Shi L C, Cai Y R 2008 Acta Phys. Sin. 57 7151 (in Chinese)[杨银堂, 武军, 丁瑞雪, 宋久旭, 石立春, 蔡玉荣 2008 物理学报 57 7151]

    [6]

    Zhao H F, Cao Q X, Li J T 2008 Acta Phys. Sin. 57 5828 (in Chinese)[赵慧芳, 曹全喜, 李建涛 2008 物理学报 57 5828]

    [7]

    Yuan N Y, Li J H, Fan L N, Wang X Q, Xie J S 2006 Acta Phys. Sin. 55 3581 (in Chinese)[袁宁一, 李金华, 范利宁, 王秀琴, 谢建生 2006 物理学报 55 3581]

    [8]

    Wang J Z, Elangovovan E, Vincent S, Alain L, Gaëlle A, François J, Rodrigo M, Elvira F 2008 Bol. Soc. Esp. Ceram. V 47 242

    [9]

    Jung C KiH Y MinS O WonK C 2003 Journal of The Electrochemical Society 150 225

    [10]

    Liu X D, Gu S L, Li F, Zhu S M, Liu W, Ye J D, Shan Z P, Liu S B, Tang K, Zhu G Y, Zhang R, Zhen Y D 2008 Chinese Journal of Luminescence 29 3 (in Chinese)[ 刘雪冬, 顾书林, 李峰, 朱顺明, 刘伟, 叶建东, 单正平, 刘少波, 汤琨, 朱光耀, 张荣, 郑有炓 2008 发光学报 29 3]

    [11]

    Prakoso S P, Saleh R 2011 World Journal of Condensed Matter Physics 1 130

    [12]

    Tzolov M, Tzenova U N, Dimova-Malinovska D, Kalitzova M, Pizzuto C, Vitali G, Zollo G, Ivanov I 2000 The solid thin film 379 28

    [13]

    He Y L, Liu X N, Yin C Z, Zhang Y 1993 Chin. Phys. B 2 807

    [14]

    Wang Y G, Gu C Z, Jin Z S, Xiong Y Y, Lin Z D, Feng K A 2000 Chin. Phys. Lett. 17 294

    [15]

    Roy V A L, Djurisic A B, Chan W K, Gao J, Lui H F, Surya C 2003 Appl. Phys. Lett. 83 141

    [16]

    Leung C Y, Djurišić, A B, Leung Y H, Ding L, Yang C L, Ge W K 2006 Journal of Crystal Growth 290 131

    [17]

    Michihiro S, Kazuhiro M, Hiroyuki K, Takafumi Y 2004 Journal of applied physics 95 10

    [18]

    Martinsa J B L Taft C A, Lie S K, Longo E 1999 Journal of Molecular Structure 528 161

    [19]

    Martins J B L, Longo E, Octavio D Salmon R, Espinoza V A A, Taft C A 2004 Chem. Phys. Lett. 400 481

    [20]

    Liu W, Gu S L, Ye J D, Zhu S M, Liu S M, Zhou X, Zhang R, Shi Y, Zheng Y D, Hang Y, Zhang C L 2006 Appl. Phys. Lett. 88 092101

    [21]

    Zhu S M, Huang S M, Gu S L, Zhu Z B, Gu R 2012 Chinese Journal of Luminescence 33 665 (in Chinese) [朱顺明黄时敏顾书林朱振邦顾然郑有炓 2012 发光学报 33 665]

    [22]

    Su H B, Dai J N, Wang L, Pu Y, Fang W Q, Jiang F 2006 Acta Optica Sinica 26 7 (in Chinese) [苏宏波, 戴江南, 王立, 蒲勇, 方文卿, 江风 2006 光学学报 26 7]

    [23]

    Sano M, Miyamoto K, Kato H, Yao T J Appl Phys 95 5527

    [24]

    Zhu G Y 2011 Ph. D Thesis (Nanjing University) (in Chinese) [朱光耀 2011 年博士学位论文(南京大学)]

    [25]

    Gregory L G, John T Y 1982 J. Chem. Phys. 77 3744

    [26]

    Klaus E, Rainald M 2008 Thin Solid Films 516 4620

  • [1]

    Shibata N, Uemura T, Yamaguchi H, Yasukawa T 2003 Phys. Status Solidia 200 58

    [2]

    He T, Xia Y J, Qin H C, Guan Z S, Li W Y 2011 Physics 40 580 (in Chinese) [贺涛, 夏玉静, 秦洪春, 管自生, 李伟英 2011 物理 40 580]

    [3]

    Duan L, Lin B X, Fu Z X 2003 Physics 32 27 (in Chinese) [段理, 林碧霞, 傅竹西2003 物理 32 27]

    [4]

    Minegishi K, Koiwai Y, Kikuchi K 1997 Japan J. Appl. Phys 36 L 1453

    [5]

    Yang Y T, Wu J, Ding R X, Song J X, Shi L C, Cai Y R 2008 Acta Phys. Sin. 57 7151 (in Chinese)[杨银堂, 武军, 丁瑞雪, 宋久旭, 石立春, 蔡玉荣 2008 物理学报 57 7151]

    [6]

    Zhao H F, Cao Q X, Li J T 2008 Acta Phys. Sin. 57 5828 (in Chinese)[赵慧芳, 曹全喜, 李建涛 2008 物理学报 57 5828]

    [7]

    Yuan N Y, Li J H, Fan L N, Wang X Q, Xie J S 2006 Acta Phys. Sin. 55 3581 (in Chinese)[袁宁一, 李金华, 范利宁, 王秀琴, 谢建生 2006 物理学报 55 3581]

    [8]

    Wang J Z, Elangovovan E, Vincent S, Alain L, Gaëlle A, François J, Rodrigo M, Elvira F 2008 Bol. Soc. Esp. Ceram. V 47 242

    [9]

    Jung C KiH Y MinS O WonK C 2003 Journal of The Electrochemical Society 150 225

    [10]

    Liu X D, Gu S L, Li F, Zhu S M, Liu W, Ye J D, Shan Z P, Liu S B, Tang K, Zhu G Y, Zhang R, Zhen Y D 2008 Chinese Journal of Luminescence 29 3 (in Chinese)[ 刘雪冬, 顾书林, 李峰, 朱顺明, 刘伟, 叶建东, 单正平, 刘少波, 汤琨, 朱光耀, 张荣, 郑有炓 2008 发光学报 29 3]

    [11]

    Prakoso S P, Saleh R 2011 World Journal of Condensed Matter Physics 1 130

    [12]

    Tzolov M, Tzenova U N, Dimova-Malinovska D, Kalitzova M, Pizzuto C, Vitali G, Zollo G, Ivanov I 2000 The solid thin film 379 28

    [13]

    He Y L, Liu X N, Yin C Z, Zhang Y 1993 Chin. Phys. B 2 807

    [14]

    Wang Y G, Gu C Z, Jin Z S, Xiong Y Y, Lin Z D, Feng K A 2000 Chin. Phys. Lett. 17 294

    [15]

    Roy V A L, Djurisic A B, Chan W K, Gao J, Lui H F, Surya C 2003 Appl. Phys. Lett. 83 141

    [16]

    Leung C Y, Djurišić, A B, Leung Y H, Ding L, Yang C L, Ge W K 2006 Journal of Crystal Growth 290 131

    [17]

    Michihiro S, Kazuhiro M, Hiroyuki K, Takafumi Y 2004 Journal of applied physics 95 10

    [18]

    Martinsa J B L Taft C A, Lie S K, Longo E 1999 Journal of Molecular Structure 528 161

    [19]

    Martins J B L, Longo E, Octavio D Salmon R, Espinoza V A A, Taft C A 2004 Chem. Phys. Lett. 400 481

    [20]

    Liu W, Gu S L, Ye J D, Zhu S M, Liu S M, Zhou X, Zhang R, Shi Y, Zheng Y D, Hang Y, Zhang C L 2006 Appl. Phys. Lett. 88 092101

    [21]

    Zhu S M, Huang S M, Gu S L, Zhu Z B, Gu R 2012 Chinese Journal of Luminescence 33 665 (in Chinese) [朱顺明黄时敏顾书林朱振邦顾然郑有炓 2012 发光学报 33 665]

    [22]

    Su H B, Dai J N, Wang L, Pu Y, Fang W Q, Jiang F 2006 Acta Optica Sinica 26 7 (in Chinese) [苏宏波, 戴江南, 王立, 蒲勇, 方文卿, 江风 2006 光学学报 26 7]

    [23]

    Sano M, Miyamoto K, Kato H, Yao T J Appl Phys 95 5527

    [24]

    Zhu G Y 2011 Ph. D Thesis (Nanjing University) (in Chinese) [朱光耀 2011 年博士学位论文(南京大学)]

    [25]

    Gregory L G, John T Y 1982 J. Chem. Phys. 77 3744

    [26]

    Klaus E, Rainald M 2008 Thin Solid Films 516 4620

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Publishing process
  • Received Date:  18 December 2013
  • Accepted Date:  23 February 2014
  • Published Online:  05 June 2014

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