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The InGaN/GaN multiple quantum wells are grown on a (0001)-oriented sapphire by using metalorganic chemical vapor deposition. Dependences of the photoluminescence (PL) peak energy and PL efficiency on injected carrier density and temperature are studied. The results show that the temperature-dependent behavior of the peak energy is in the manner of decrease-increase-decrease (S-shaped), and the maximum of the PL efficiency is observed at about 50 K. The former is attributed to the potential inhomogeneity and local characteristics of the carrier recombination in the InGaN matrix. The latter indicates that the traditional method that the internal quantum efficiency (IQE) is considered to be 100% at low temperature, should be corrected. Furthermore, it is found that the IQE depends on not only temperature but also injected carrier density. Based on the above discussion, an improved method of setting the IQE, i.e., measuring the dependence of PL efficiency is proposed.
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Keywords:
- InGaN/GaN /
- PL efficiency /
- PL peak energy /
- internal quantum efficiency
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[15] Lee Y J, Kuo H C, Lu T C, Wang S C, Ng K W, Lau K M, Yang Z P, Chang A S P, Lin S Y 2008 J. Lightwave Technol. 26 1455
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[17] Jimi H, Inada T, Fujiwara K 2008 Phys. Status Solidi (RRL) 2 50
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[19] Wang H N, Ji Z W, Qu S, Wang G, Jiang Y Z, Liu B L, Xu X G, Mino H 2012 Opt. Express 20 3932
[20] Feng Z C, Zhu L H, Kuo T W, Wu C Y, Tsai H L, Liu B L, Yang J R 2013 Thin Solid Films 529 269
[21] Cho Y H, Gainer G H, Fischer A J, Song J J, Keller S, Mishra U K, Denbaars S P 1998 Appl. Phys. Lett. 73 1370
[22] Ramaiah K S, Su Y K, Chang S J, Kerr B, Liu H P, Chen I G 2004 Appl. Phys. Lett. 84 3307
[23] Wang F, Ji Z W, Wang Q, Wang X S, Qu S, Xu X G, L Y J, Feng Z H 2013 J. Appl. Phys. 114 163525
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[25] Feng S W, Cheng Y C, Chung Y Y, Yang C C, Ma K J, Yan C C, Hsu C, Lin J Y, Jiang H X 2003 Appl. Phys. Lett. 82 1377
[26] Eliseev P G 2003 J. Appl. Phys. 93 5404
[27] Eliseev P G, Perlin P, Lee J, Osinski M 1997 Appl. Phys. Lett. 71 569
[28] Sun H, Ji Z W, Wang H N, Xiao H D, Qu S, Xu X G, Jin A Z, Yang H F 2013 J. Appl. Phys. 114 093508
[29] Martil I, Redondo E, Ojeda A 1997 J. Appl. Phys. 81 2442
[30] Cao X A, Stokes E B, Sandvik P M, LeBoeuf S F, Kretchmer J, Walker D 2002 IEEE Electr. Dev. L 23 535
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[1] Hu X L, Zhang J Y, Shang J Z, Liu W J, Zhang B P 2010 Chin. Phys. B 19 117801
[2] Jiang R L, WANG J Z, Chen P, Zhao Z M, Mei Y F, Shen B, Zhang R, Wu X L, Zheng Y D 2002 Chin. Phys. Lett. 19 1553
[3] Zhang J C, Dai L, Qin G G, Ying L Z, Zhao X S 2002 Acta Phys. Sin. 51 629 (in Chinese) [张纪才, 戴伦, 秦国刚, 应丽贞, 赵新生 2002 物理学报 51 629]
[4] Xing Y H, Deng J, Han J, Li J J, Shen G D 2009 Acta Phys. Sin. 58 590 (in Chinese) [邢艳辉, 邓军, 韩军, 李建军, 沈光地 2009 物理学报 58 590]
[5] Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J, Park Y 2007 Appl. Phys. Lett. 91 183507
[6] Hader J, Moloney J V, Koch S W 2010 Appl. Phys. Lett. 96 221106
[7] Zhu J H, Wang L J, Zhang S M, Wang H, Zhao D G, Zhu J J, Liu Z S, Jiang D S, Yang H 2011 Chin. Phys. B 20 077804
[8] Xu G Z, Liang H, Bai Y Q, Liu J M, Zhu X 2005 Acta Phys. Sin. 54 5344 (in Chinese) [徐耿钊, 梁琥, 白永强, 刘纪美, 朱星 2005 物理学报 54 5344]
[9] Yan Y H, Han J, Liu J P, Deng J, Niu N H, Shen G D 2007 Acta Phys. Sin. 56 7295 (in Chinese) [邢艳辉, 韩军, 刘建平, 邓军, 牛南辉, 沈光地 2007 物理学报 56 7295]
[10] Lee Y J, Chih C H, Ke C C, Lin P C, Lu T C, Kuo H C, Wang S C 2009 IEEE J. Sel. Top. Quant. 15 1137
[11] Hangleiter A, Fuhrmann D, Grewe M, Hitzel F, Klewer G, Lahmann S, Netzel C, Riedel N, Rossow U 2004 Phys. Status Solidi A 201 2808
[12] Yoichi Y, Kazuto I, Takahiro K, Naohiko S, Tsunemasa T, Hiromitsu K, Hiroaki O 2008 J. Light Vis. Env. 32 191
[13] Takakazu K, Yasuhiro S, Masaki Y, Kazuya M, Hiromitsu K, Hiroaki O, Yoichi Y 2012 Jpn. J. Appl. Phys. 51 072102
[14] Satoshi W, Norihede Y, Masakazu N, Yusuke U, Chiharu S, Yoichi Y, Tsunemasa T, Kazuyuki T, Hiroaki O, Hiromitsu K 2003 Appl. Phys. Lett. 83 4906
[15] Lee Y J, Kuo H C, Lu T C, Wang S C, Ng K W, Lau K M, Yang Z P, Chang A S P, Lin S Y 2008 J. Lightwave Technol. 26 1455
[16] Sasaki A, Shibakawa S, Kawakami Y, Nishizuka K, Nurukawa Y, Mukai T 2006 Jpn. J. Appl. Phys. 45 8719
[17] Jimi H, Inada T, Fujiwara K 2008 Phys. Status Solidi (RRL) 2 50
[18] Yamane Y, Fujiwara K, Sheu J K 2007 Appl. Phys. Lett. 91 073501
[19] Wang H N, Ji Z W, Qu S, Wang G, Jiang Y Z, Liu B L, Xu X G, Mino H 2012 Opt. Express 20 3932
[20] Feng Z C, Zhu L H, Kuo T W, Wu C Y, Tsai H L, Liu B L, Yang J R 2013 Thin Solid Films 529 269
[21] Cho Y H, Gainer G H, Fischer A J, Song J J, Keller S, Mishra U K, Denbaars S P 1998 Appl. Phys. Lett. 73 1370
[22] Ramaiah K S, Su Y K, Chang S J, Kerr B, Liu H P, Chen I G 2004 Appl. Phys. Lett. 84 3307
[23] Wang F, Ji Z W, Wang Q, Wang X S, Qu S, Xu X G, L Y J, Feng Z H 2013 J. Appl. Phys. 114 163525
[24] Ma J, Ji X L, Wang G H, Wei X C, Lu H X, Yi X Y, Duan R F, Wang J X, Zeng Y P, Li J M, Yang F H, Wang C, Zou G 2012 Appl. Phys. Lett. 101 131101
[25] Feng S W, Cheng Y C, Chung Y Y, Yang C C, Ma K J, Yan C C, Hsu C, Lin J Y, Jiang H X 2003 Appl. Phys. Lett. 82 1377
[26] Eliseev P G 2003 J. Appl. Phys. 93 5404
[27] Eliseev P G, Perlin P, Lee J, Osinski M 1997 Appl. Phys. Lett. 71 569
[28] Sun H, Ji Z W, Wang H N, Xiao H D, Qu S, Xu X G, Jin A Z, Yang H F 2013 J. Appl. Phys. 114 093508
[29] Martil I, Redondo E, Ojeda A 1997 J. Appl. Phys. 81 2442
[30] Cao X A, Stokes E B, Sandvik P M, LeBoeuf S F, Kretchmer J, Walker D 2002 IEEE Electr. Dev. L 23 535
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