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For preparing flexible copper clad laminate, copper films are deposited by magnetron sputtering on polyimide substrates. During the experiment, the prepared copper films show good conductivity while changing the technological parameter like preparation temperature, substrate bias, preparation time, and so on. The composition, structure, and surface morphology of the thin film are investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM). The stylus profilometer and four-point probe resistance measuring instrument are used to examine the thickness and resistance of the thin films, and the resistivity of the film is calculated. Finally, the optimum processing conditions for the copper films are obtained according to the standard of industrial application: the preparation temperature is 100℃, the DC substrate bias is 50 V, with no pulsed substrate bias.
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Keywords:
- flexible copper clad laminate /
- metal copper film /
- middle frequency magnetron sputtering /
- resistivity
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[2] Li C P 2012 Screen Printing 9 10 (in Chinese) [李春甫 2012 丝网印刷 9 10]
[3] Zhu D T 2003 Printed Circuit Board Information 5 78 (in Chinese) [祝大同 2003 印制电路资讯 5 78]
[4] Gu X S 2007 Printed Circuit Information 9 7 (in Chinese)[辜信实 2007 印制电路信息 9 7]
[5] Wang Y Y, He W, Zhou G Y, Chen Y M, He B, Mo Y Q 2011 Printed Circuit Information 5 17 (in Chinese)[王艳艳, 何为, 周国云, 陈苑明, 何波, 莫芸绮 2011 印制电路信息 5 17]
[6] Fu H T, Luo Y H, Yan H J, Chen P F, Chang M, Huang W 2013 Electronics Process Technology 34 151 (in Chinese) [付海涛, 罗永红, 严惠娟, 陈培峰, 常明, 黄伟 2013 电子工艺技术 34 151]
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[8] Zhang C, Chen X L, Wang F, Yan C B, Huang Q, Zhao Y, Zhang X D, Geng X H 2012 Acta Phys. Sin. 61 238101 (in Chinese)[张翅, 陈新亮, 王斐, 闫聪博, 黄茜, 赵颖, 张晓丹, 耿新华 2012 物理学报 61 238101]
[9] Ma J M, Liang Y, Gao X Y, Zhang Z Y, Chen C, Zhao M K, Yang S E, Gu J H, Chen Y S, Lu J X 2011 Chin. Phys. B 20 056102
[10] Luo X D 2007 Semiconductor Technology 32 138 (in Chinese)[雒向东 2007 半导体技术 32 138]
[11] Su Y, Dond C, Zhu M, Xu J, Fan P 2012 Rare Metals 31 193
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[13] Liu Z W, Gu J F, Sun C W, Zhang Q Y 2006 Acta Phys. Sin. 55 1965 (in Chinese)[刘志文, 谷建峰, 孙成伟, 张庆瑜 2006 物理学报 55 1965]
[14] Zhang H, Liu Y S, Liu W H, Wang B Y, Wei L 2007 Acta Phys. Sin. 56 7255 (in Chinese)[张辉, 刘应书, 刘文海, 王宝义, 魏龙 2007 物理学报 56 7255]
[15] Xiu X W, Zhao W J 2012 Chin. Phys. B 21 066802
[16] Huang Z, Wu L L, Li B, Hao X, He J X, Feng L H, Li W, Zhang J Q, Cai Y P 2010 Chin. Phys. B 19 127204
[17] Yang Z W, Han S H, Yang T L, Zhao J Q, Ma J, Ma H L, Cheng C F 2000 Acta Phys. Sin. 49 1196 (in Chinese)[杨志伟, 韩圣浩, 杨田林, 赵俊卿, 马瑾, 马洪磊, 程传福 2000 物理学报 49 1196]
[18] Pan L, Bai Y, Zhang D, Wang J 2012 Rare Metals 31 183
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[1] Gu X S 2002 Printed circuit with copper-clad laminate (Beijing: Chemical Industry Publishing House) pp1-12 (in Chinese) [辜信实 2002 印制电路用覆铜箔层压板(北京: 化学工业出版社)第1–12页]
[2] Li C P 2012 Screen Printing 9 10 (in Chinese) [李春甫 2012 丝网印刷 9 10]
[3] Zhu D T 2003 Printed Circuit Board Information 5 78 (in Chinese) [祝大同 2003 印制电路资讯 5 78]
[4] Gu X S 2007 Printed Circuit Information 9 7 (in Chinese)[辜信实 2007 印制电路信息 9 7]
[5] Wang Y Y, He W, Zhou G Y, Chen Y M, He B, Mo Y Q 2011 Printed Circuit Information 5 17 (in Chinese)[王艳艳, 何为, 周国云, 陈苑明, 何波, 莫芸绮 2011 印制电路信息 5 17]
[6] Fu H T, Luo Y H, Yan H J, Chen P F, Chang M, Huang W 2013 Electronics Process Technology 34 151 (in Chinese) [付海涛, 罗永红, 严惠娟, 陈培峰, 常明, 黄伟 2013 电子工艺技术 34 151]
[7] Wu L F, You Z H, Mao L M, Zhang Z J, Chen X L, Tian M M, Wu L 2011 Jiangxi Science 29 630 (in Chinese) [吴丽芳, 游志华, 毛龙满, 张志杰, 陈小兰, 田明明, 吴亮 2011 江西科学 29 630]
[8] Zhang C, Chen X L, Wang F, Yan C B, Huang Q, Zhao Y, Zhang X D, Geng X H 2012 Acta Phys. Sin. 61 238101 (in Chinese)[张翅, 陈新亮, 王斐, 闫聪博, 黄茜, 赵颖, 张晓丹, 耿新华 2012 物理学报 61 238101]
[9] Ma J M, Liang Y, Gao X Y, Zhang Z Y, Chen C, Zhao M K, Yang S E, Gu J H, Chen Y S, Lu J X 2011 Chin. Phys. B 20 056102
[10] Luo X D 2007 Semiconductor Technology 32 138 (in Chinese)[雒向东 2007 半导体技术 32 138]
[11] Su Y, Dond C, Zhu M, Xu J, Fan P 2012 Rare Metals 31 193
[12] Cao Y H, Di G Q 2011 Acta Phys. Sin. 60 037702 (in Chinese) [曹月华, 狄国庆 2011 物理学报 60 037702]
[13] Liu Z W, Gu J F, Sun C W, Zhang Q Y 2006 Acta Phys. Sin. 55 1965 (in Chinese)[刘志文, 谷建峰, 孙成伟, 张庆瑜 2006 物理学报 55 1965]
[14] Zhang H, Liu Y S, Liu W H, Wang B Y, Wei L 2007 Acta Phys. Sin. 56 7255 (in Chinese)[张辉, 刘应书, 刘文海, 王宝义, 魏龙 2007 物理学报 56 7255]
[15] Xiu X W, Zhao W J 2012 Chin. Phys. B 21 066802
[16] Huang Z, Wu L L, Li B, Hao X, He J X, Feng L H, Li W, Zhang J Q, Cai Y P 2010 Chin. Phys. B 19 127204
[17] Yang Z W, Han S H, Yang T L, Zhao J Q, Ma J, Ma H L, Cheng C F 2000 Acta Phys. Sin. 49 1196 (in Chinese)[杨志伟, 韩圣浩, 杨田林, 赵俊卿, 马瑾, 马洪磊, 程传福 2000 物理学报 49 1196]
[18] Pan L, Bai Y, Zhang D, Wang J 2012 Rare Metals 31 183
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