43 m. With the increase in Mg content, the melting point of the corresponding compounds increases. On the contrary, the lattice constant decreases. The actual content of filling atomic Ba in doped samples is below the ideal value of 8.0, the occupancy of Ba in the dodecahedron is about 0.93 for the sample with X=1.5. All the samples show n-type conduction. The Mg atoms have an effect on the band structure of the materials, and the carrier concentrations in the doped samples are reduced. However, the absolute values of Seebeck coefficient and the resistivity of doped compounds increase, respectively. By calculation, the sample of X=1.5 obtains the maximum value of power factor 1.26×10-3 W·m-1·K-2 near 430 K.

"/>     Structural and electrical transport properties of Mg-doped n-type Sn-based type Ⅷ single crystalline clathrate
Acta Physica Sinica
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Acta Phys. Sin  2014, Vol. 63 Issue (17): 177401     doi:10.7498/aps.63.177401
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Structural and electrical transport properties of Mg-doped n-type Sn-based type Ⅷ single crystalline clathrate
Meng Dai-Yi1, Shen Lan-Xian1, Li De-Cong2, Shai Xu-Xia1, Deng Shu-Kang1
1. Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500, China;
2. Photoelectric Engineering College, Yunnan Open University, Kunming 650050, China
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