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Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor

Tang Xin-Yue Gao Hong Pan Si-Ming Sun Jian-Bo Yao Xiu-Wei Zhang Xi-Tian

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Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor

Tang Xin-Yue, Gao Hong, Pan Si-Ming, Sun Jian-Bo, Yao Xiu-Wei, Zhang Xi-Tian
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  • Back-gate field effect transistors based on In-doped ZnO individual nanobelts have been fabricated using the low-cost microgrid template method. The output (Ids-Vds) and transfer (Ids-Vgs) characteristic curves for the transistors are measured, and the mobility is derived to be 622 cm2· V-1· s-1. This value is obviously superior to those for most of materials including pure ZnO in the literature, and possible influence factors have also been discussed.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11074060, 51172058), the Key Project of the Science Technology and Research of Education Bureau, Heilongjiang Province, China (Grant No. 12521z012), and the Graduate Students' Scientific Research Innovation Project of Heilongjiang Province, China (2013).
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    Phillips J M, Cava R J, Thomas G A, Carter S A, Kwo J, Siegrist T, Krajewski J J, Marshall J H, Peck W F, Jr., Rapkine D H 1995 Appl. Phys. Lett. 67 2246

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    Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475

    [5]

    Su J, Li H F, Huang Y H, Xing X J, Zhao J, Zhang Y 2011 Nanoscale 3 2182

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    Ahmad M, Zhao J, Iqbal J, Miao W, Xie L, Mo R, Zhu J 2009 J. Phys. D: Appl. Phys. 42 165406

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    Li L M, Li C C, Zhang J, Du Z F, Zou B S, Yu H C, Wang Y G, Wang T H 2007 Nanotechnology 18 225504

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    Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee Takhee 2009 Nanotechnology 20 095203

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    Cha S N, Jang J E, Choi Y, Amaratunga G A J, Ho G W, Welland M E, Hasko D G, Kang D J, Kim J M 2006 Appl. Phys. Lett. 89 263102

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    Cheng Y, Xiong P, Fields L, Zheng J P, Yang R S, Wang Z L 2006 Appl. Phys. Lett. 89 093114

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    Kim D H, Cho N G, Kim H G, Cho W Y 2007 J. Electrochem. Soc. 154 H939

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    De D, Manongdo J, See S, Zhang V, Guloy A, Peng H 2013 Nanotechnology 24 025202

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    Li M, Zhang H Y, Guo C X, Xu J B, Fu X J 2009 Chin. Phys. B 18 1594

    [14]

    Jiang W, Gao H, Xu L L 2012 Chin. Phys. Lett. 29 037102

    [15]

    Lang Y, Gao H, Jiang W, Xu L L, Hou H T 2012 Sens. Actuators A 174 43

    [16]

    Li M J, Gao H, Li J L, Wen J, Li K, Zhang W G 2013 Acta Phys. Sin. 62 187302(in Chinese) [李铭杰, 高红, 李江禄, 温静, 李凯, 张伟光 2013 物理学报 62 187302]

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    Yuan Z, Gao H, Xu LL, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201(in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 物理学报 61 057201]

    [18]

    Zhou J, Gu Y D, Hu Y F, Mai W J, Yeh P H, Bao G, Sood A K, Polla D L, Wang Z L 2009 Appl. Phys. Lett. 94 191103

    [19]

    Wan Q, Huang J, Lu A, Wang T H 2008 Appl. Phys. Lett. 93 103109

    [20]

    Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466

    [21]

    Jabeen M, Iqbal M A, Kumar R V, Ahmed M, Javed M T 2014 Chin. Phys. B 23 018504

    [22]

    Chen Y T, Cheng C L, Chen Y F 2008 Nanotechnology. 19 445707

    [23]

    Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052

    [24]

    Ma R M, Dai L, Huo H B, Yang W Q, Qin G G 2006 Appl. Phys. Lett. 89 203120

    [25]

    Fan Z Y, Wang D W, Chang P C, Tseng W Y, Lu J G 2004 Appl. Phys. Lett. 85 5923

    [26]

    Hsu C L, Tsai T Y 2011 J. Electrochem. Soc. 158 K20

    [27]

    Wu Y, Girgis E, Ström V, Voit W, Belova L, Rao K V 2011 Phys. Status Solidi A 208 206

    [28]

    Li S S, Zhang Z, Huang J Z, Feng X P, Liu R X 2011 Acta Phys. Sin. 60 097405(in Chinese) [李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜 2011 物理学报 60 097405]

    [29]

    Shinde S S, Shinde P S, Bhosale C H, Rajpure K Y 2008 J. D: Appl. Phys. 41 105109

    [30]

    Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574

    [31]

    Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mat. Interfaces 2 391

  • [1]

    Chen K J, Hung F Y, Chang S J, Hu Z S 2009 Appl. Surf. Sci. 255 6308

    [2]

    Huang Y H, Zhang Y, Gu Y S, Bai X D, Qi J J, Liao Q L, Liu J 2007 J. Phys. Chem. C 111 9039

    [3]

    Phillips J M, Cava R J, Thomas G A, Carter S A, Kwo J, Siegrist T, Krajewski J J, Marshall J H, Peck W F, Jr., Rapkine D H 1995 Appl. Phys. Lett. 67 2246

    [4]

    Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475

    [5]

    Su J, Li H F, Huang Y H, Xing X J, Zhao J, Zhang Y 2011 Nanoscale 3 2182

    [6]

    Ahmad M, Zhao J, Iqbal J, Miao W, Xie L, Mo R, Zhu J 2009 J. Phys. D: Appl. Phys. 42 165406

    [7]

    Li L M, Li C C, Zhang J, Du Z F, Zou B S, Yu H C, Wang Y G, Wang T H 2007 Nanotechnology 18 225504

    [8]

    Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee Takhee 2009 Nanotechnology 20 095203

    [9]

    Cha S N, Jang J E, Choi Y, Amaratunga G A J, Ho G W, Welland M E, Hasko D G, Kang D J, Kim J M 2006 Appl. Phys. Lett. 89 263102

    [10]

    Cheng Y, Xiong P, Fields L, Zheng J P, Yang R S, Wang Z L 2006 Appl. Phys. Lett. 89 093114

    [11]

    Kim D H, Cho N G, Kim H G, Cho W Y 2007 J. Electrochem. Soc. 154 H939

    [12]

    De D, Manongdo J, See S, Zhang V, Guloy A, Peng H 2013 Nanotechnology 24 025202

    [13]

    Li M, Zhang H Y, Guo C X, Xu J B, Fu X J 2009 Chin. Phys. B 18 1594

    [14]

    Jiang W, Gao H, Xu L L 2012 Chin. Phys. Lett. 29 037102

    [15]

    Lang Y, Gao H, Jiang W, Xu L L, Hou H T 2012 Sens. Actuators A 174 43

    [16]

    Li M J, Gao H, Li J L, Wen J, Li K, Zhang W G 2013 Acta Phys. Sin. 62 187302(in Chinese) [李铭杰, 高红, 李江禄, 温静, 李凯, 张伟光 2013 物理学报 62 187302]

    [17]

    Yuan Z, Gao H, Xu LL, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201(in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 物理学报 61 057201]

    [18]

    Zhou J, Gu Y D, Hu Y F, Mai W J, Yeh P H, Bao G, Sood A K, Polla D L, Wang Z L 2009 Appl. Phys. Lett. 94 191103

    [19]

    Wan Q, Huang J, Lu A, Wang T H 2008 Appl. Phys. Lett. 93 103109

    [20]

    Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466

    [21]

    Jabeen M, Iqbal M A, Kumar R V, Ahmed M, Javed M T 2014 Chin. Phys. B 23 018504

    [22]

    Chen Y T, Cheng C L, Chen Y F 2008 Nanotechnology. 19 445707

    [23]

    Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052

    [24]

    Ma R M, Dai L, Huo H B, Yang W Q, Qin G G 2006 Appl. Phys. Lett. 89 203120

    [25]

    Fan Z Y, Wang D W, Chang P C, Tseng W Y, Lu J G 2004 Appl. Phys. Lett. 85 5923

    [26]

    Hsu C L, Tsai T Y 2011 J. Electrochem. Soc. 158 K20

    [27]

    Wu Y, Girgis E, Ström V, Voit W, Belova L, Rao K V 2011 Phys. Status Solidi A 208 206

    [28]

    Li S S, Zhang Z, Huang J Z, Feng X P, Liu R X 2011 Acta Phys. Sin. 60 097405(in Chinese) [李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜 2011 物理学报 60 097405]

    [29]

    Shinde S S, Shinde P S, Bhosale C H, Rajpure K Y 2008 J. D: Appl. Phys. 41 105109

    [30]

    Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574

    [31]

    Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mat. Interfaces 2 391

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Publishing process
  • Received Date:  27 March 2014
  • Accepted Date:  24 May 2014
  • Published Online:  05 October 2014

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