InGaN/GaN blue light emitting diodes grown on Si(110) and Si(111) substrates
Acta Physica Sinica
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Acta Phys. Sin  2014, Vol. 63 Issue (20): 207304     doi:10.7498/aps.63.207304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
InGaN/GaN blue light emitting diodes grown on Si(110) and Si(111) substrates
Liu Zhan-Hui1, Zhang Li-Li1, Li Qing-Fang1, Zhang Rong2, Xiu Xiang-Qian2, Xie Zi-Li2, Shan Yun3
1. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China;
2. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
3. School of Biochemical and Environmental Engineering, Nanjing Xiaozhuang College, Nanjing 211171, China
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