Study on the influence of <i>γ</i> -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor
Acta Physica Sinica
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Acta Phys. Sin  2014, Vol. 63 Issue (23): 236102     doi:10.7498/aps.63.236102
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Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor
Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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