Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

An improved WOx memristor model with synapse characteristic analysis

Meng Fan-Yi Duan Shu-Kai Wang Li-Dan Hu Xiao-Fang Dong Zhe-Kang

Citation:

An improved WOx memristor model with synapse characteristic analysis

Meng Fan-Yi, Duan Shu-Kai, Wang Li-Dan, Hu Xiao-Fang, Dong Zhe-Kang
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • Memristor is defined as the fourth basic electronic element, the studies on its models exhibit diversity. Now, the matching extent between memristor model and natural memristor has received researchers' wide attention. A new memristor model is proposed by changing the ion diffusion term of the WOx memristor, namely, adding another two internal state variables τ and μ which denote the relaxation time and retention, respectively, and the improved model can simulate natural memristor better. Firstly, the new one is able to not only describe the general characteristics of a memrsitor, but also capture the memory loss behavior. In addition, the new memristor can be considered as a neural synapse, under the action of the input pulses with different amplitudes, duration and intervals, the spike rate dependent plasticity, short-term plasticity (STP), and long-term plasticity (LTP) are analyzed, and the ''learning experience'' phenomenon which is very similar to the biological system is discovered, most of which is due to the back diffusion of the oxygen vacancies during the intervals of the input pulses which are caused by the concentration difference. Moreover, an exponential decay equation is built to describe the relaxation process of STP. Finally, taking into consideration the relationship between temperature and ion diffusion coefficient, the effect of temperature on the relaxation process of STP is discussed. Experimental results show that the new memristor model can better match the actual behavior characteristics, and more suitably acts as a synapse for being applied to neuromorphic systems.
    • Funds: Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. [2013]47), the National Natural Science Foundation of China (Grant Nos. 61372139, 61101233, 60972155), the "Spring Sunshine Plan" Research Project of Ministry of Education of China (Grant No. z2011148), the Technology Foundation for Selected Overseas Chinese Scholars, Ministry of Personnel in China (Grant No. [2012]186), the University Excellent Talents Supporting Foundation of Chongqing, China (Grant No. [2011]65), the University Key Teacher Supporting Foundation of Chongqing, China (Grant No. [2011]65), and the Fundamental Research Fund for the Central Universities, China (Grant Nos. XDJK2014A009, XDJK2013B011).
    [1]

    Chua L O 1971 IEEE Trans. Circ. Th. 18 507

    [2]

    Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80

    [3]

    Biolek Z, Biolek D, Biolková V 2009 Radioengineering 18 210

    [4]

    Chen Y R, Wang X B 2009 IEEE/ACM International Symposium on Nanoscale Architectures, San Francisco, CA USA, July 30-31, 2009 p7

    [5]

    Wu H G, Bao B C, Chen M 2014 Chin. Phys. B 23 118401

    [6]

    Jo S H, Kim K H, Lu W 2009 Nano Lett. 9 870

    [7]

    Duan S K, Hu X F, Wang L D, Li C D, Mazumder P 2012 Sci. China: Inf. Sci. 55 1446

    [8]

    Yener S C, Kuntman H H 2014 Radioengineering 23 1140

    [9]

    Dong Z K, Duan S K, Hu X F, Wang L D, Li H 2014 Sci. World J. 2014 394828

    [10]

    Cantley K D, Subramaniam A, Stiegler H J, Chapman R A, Vogel E M 2011 IEEE Trans. Nanotechnol. 10 1066

    [11]

    Adhikari S P, Yang C J, Kim H, Chua L O 2012 IEEE Trans. Neural Networks and Learning Systems 23 1426

    [12]

    Hu X F, Duan S K, Wang L D, Liao X F 2011 Sci. China: Inf. Sci. 41 500 (in Chinese) [胡小方, 段书凯, 王丽丹, 廖晓峰 2011 中国科学:信息科学 41 500]

    [13]

    Afifi A, Ayatollahi A, Raissi F 2009 IEEE Circuit Theory and Design Antalya, August 23-27, 2009 p563

    [14]

    Dong Z K, Duan S K, Hu X F, Wang L D 2014 Acta Phys. Sin. 63 128502 (in Chinese) [董哲康, 段书凯, 胡小方, 王丽丹 2014 物理学报 63 128502]

    [15]

    Tian X B, Xu H 2013 Chin. Phys. B 22 088501

    [16]

    Tian X B, Xu H 2014 Chin. Phys. B 23 068401

    [17]

    Xu H, Tian X B, Bu K, Li Q J 2014 Acta Phys. Sin. 63 098402 (in Chinese) [徐晖, 田晓波, 步凯, 李清江 2014 物理学报 63 098402]

    [18]

    Tian X B, Xu H, Li Q J 2014 Acta Phys. Sin. 63 048401 (in Chinese) [田晓波, 徐晖, 李清江 2014 物理学报 63 048401]

    [19]

    Chen L, Li C D, Huang T W, Ahmad H G, Chen Y R 2014 Phys. Lett. A 378 2924

    [20]

    Chang T, Jo S H, Kim K H, Sheridan P, Gaba S, Lu W 2011 Appl. Phys. A 102 857

    [21]

    Chang T, Jo S H, Lu W 2011 ACS Nano 5 7669

    [22]

    Ohno T, Hasegawa T, Tsuruoka T, Terabe K, Gimzewski J K, Aono M 2011 Nat. Mater. 10 591

    [23]

    Wang Z Q, Xu H Y, Li X H, Yu H, Liu Y C, Zhu X J 2012 Adv. Funct. Mater. 22 2759

    [24]

    Bhagya V, Srikumar B N, Raju T R, Shankaranarayana Rao B S 2015 J. Neurosci. Res. 93 104

    [25]

    So H S, Choi S H, Seo K S, Seo C S, So S Y 2014 KSCE J. Civ. Eng. 18 2227

  • [1]

    Chua L O 1971 IEEE Trans. Circ. Th. 18 507

    [2]

    Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80

    [3]

    Biolek Z, Biolek D, Biolková V 2009 Radioengineering 18 210

    [4]

    Chen Y R, Wang X B 2009 IEEE/ACM International Symposium on Nanoscale Architectures, San Francisco, CA USA, July 30-31, 2009 p7

    [5]

    Wu H G, Bao B C, Chen M 2014 Chin. Phys. B 23 118401

    [6]

    Jo S H, Kim K H, Lu W 2009 Nano Lett. 9 870

    [7]

    Duan S K, Hu X F, Wang L D, Li C D, Mazumder P 2012 Sci. China: Inf. Sci. 55 1446

    [8]

    Yener S C, Kuntman H H 2014 Radioengineering 23 1140

    [9]

    Dong Z K, Duan S K, Hu X F, Wang L D, Li H 2014 Sci. World J. 2014 394828

    [10]

    Cantley K D, Subramaniam A, Stiegler H J, Chapman R A, Vogel E M 2011 IEEE Trans. Nanotechnol. 10 1066

    [11]

    Adhikari S P, Yang C J, Kim H, Chua L O 2012 IEEE Trans. Neural Networks and Learning Systems 23 1426

    [12]

    Hu X F, Duan S K, Wang L D, Liao X F 2011 Sci. China: Inf. Sci. 41 500 (in Chinese) [胡小方, 段书凯, 王丽丹, 廖晓峰 2011 中国科学:信息科学 41 500]

    [13]

    Afifi A, Ayatollahi A, Raissi F 2009 IEEE Circuit Theory and Design Antalya, August 23-27, 2009 p563

    [14]

    Dong Z K, Duan S K, Hu X F, Wang L D 2014 Acta Phys. Sin. 63 128502 (in Chinese) [董哲康, 段书凯, 胡小方, 王丽丹 2014 物理学报 63 128502]

    [15]

    Tian X B, Xu H 2013 Chin. Phys. B 22 088501

    [16]

    Tian X B, Xu H 2014 Chin. Phys. B 23 068401

    [17]

    Xu H, Tian X B, Bu K, Li Q J 2014 Acta Phys. Sin. 63 098402 (in Chinese) [徐晖, 田晓波, 步凯, 李清江 2014 物理学报 63 098402]

    [18]

    Tian X B, Xu H, Li Q J 2014 Acta Phys. Sin. 63 048401 (in Chinese) [田晓波, 徐晖, 李清江 2014 物理学报 63 048401]

    [19]

    Chen L, Li C D, Huang T W, Ahmad H G, Chen Y R 2014 Phys. Lett. A 378 2924

    [20]

    Chang T, Jo S H, Kim K H, Sheridan P, Gaba S, Lu W 2011 Appl. Phys. A 102 857

    [21]

    Chang T, Jo S H, Lu W 2011 ACS Nano 5 7669

    [22]

    Ohno T, Hasegawa T, Tsuruoka T, Terabe K, Gimzewski J K, Aono M 2011 Nat. Mater. 10 591

    [23]

    Wang Z Q, Xu H Y, Li X H, Yu H, Liu Y C, Zhu X J 2012 Adv. Funct. Mater. 22 2759

    [24]

    Bhagya V, Srikumar B N, Raju T R, Shankaranarayana Rao B S 2015 J. Neurosci. Res. 93 104

    [25]

    So H S, Choi S H, Seo K S, Seo C S, So S Y 2014 KSCE J. Civ. Eng. 18 2227

  • [1] Li Rui, Xu Bang-Lin, Zhou Jian-Fang, Jiang En-Hua, Wang Bing-Hong, Yuan Wu-Jie. A synaptic plasticity induced change in synaptic intensity variation and neurodynamic transition during awakening-sleep cycle. Acta Physica Sinica, 2023, 72(24): 248706. doi: 10.7498/aps.72.20231037
    [2] Hu Wei, Liao Jian-Bin, Du Yong-Qian. An analytic modeling strategy for memristor cell applicable to large-scale memristive networks. Acta Physica Sinica, 2021, 70(17): 178505. doi: 10.7498/aps.70.20210116
    [3] Shi Chen-Yang, Min Guang-Zong, Liu Xiang-Yang. Research progress of protein-based memristor. Acta Physica Sinica, 2020, 69(17): 178702. doi: 10.7498/aps.69.20200617
    [4] Guo Ke-Xin, Yu Hai-Yang, Han Hong, Wei Huan-Huan, Gong Jiang-Dong, Liu Lu, Huang Qian, Gao Qing-Yun, Xu Wen-Tao. Artificial synapse based on MoO3 nanosheets prepared by hydrothermal synthesis. Acta Physica Sinica, 2020, 69(23): 238501. doi: 10.7498/aps.69.20200928
    [5] Ma Tian-Bing, Zi Bao-Wei, Guo Yong-Cun, Ling Liu-Yi, Huang You-Rui, Jia Xiao-Fen. Distributed optical fiber temperature sensor based on self-compensation of fitting attenuation difference. Acta Physica Sinica, 2020, 69(3): 030701. doi: 10.7498/aps.69.20191456
    [6] Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan. Analysis of memristor model with learning-experience behavior. Acta Physica Sinica, 2019, 68(19): 198502. doi: 10.7498/aps.68.20190808
    [7] Shao Nan,  Zhang Sheng-Bing,  Shao Shu-Yuan. Mathematical model of memristor with sensory memory. Acta Physica Sinica, 2019, 68(1): 018501. doi: 10.7498/aps.68.20181577
    [8] Liu Yi-Chun, Lin Ya, Wang Zhong-Qiang, Xu Hai-Yang. Oxide-based memristive neuromorphic synaptic devices. Acta Physica Sinica, 2019, 68(16): 168504. doi: 10.7498/aps.68.20191262
    [9] Chen Yi-Hao, Xu Wei, Wang Yu-Qi, Wan Xiang, Li Yue-Feng, Liang Ding-Kang, Lu Li-Qun, Liu Xin-Wei, Lian Xiao-Juan, Hu Er-Tao, Guo Yu-Feng, Xu Jian-Guang, Tong Yi, Xiao Jian. Fabrication of synaptic memristor based on two-dimensional material MXene and realization of both long-term and short-term plasticity. Acta Physica Sinica, 2019, 68(9): 098501. doi: 10.7498/aps.68.20182306
    [10] Wu Jie-Ning, Wang Li-Dan, Duan Shu-Kai. A memristor-based time-delay chaotic systems and pseudo-random sequence generator. Acta Physica Sinica, 2017, 66(3): 030502. doi: 10.7498/aps.66.030502
    [11] Yang Yi, Xu Ben, Liu Ya-Ming, Li Ping, Wang Dong-Ning, Zhao Chun-Liu. Sensitivity-enhanced temperature sensor with fiber optic Fabry-Perot interferometer based on vernier effect. Acta Physica Sinica, 2017, 66(9): 094205. doi: 10.7498/aps.66.094205
    [12] Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan. Modification of memristor model with synaptic characteristics and mechanism analysis of the model's learning-experience behavior. Acta Physica Sinica, 2016, 65(12): 128503. doi: 10.7498/aps.65.128503
    [13] Yuan Ze-Shi, Li Hong-Tao, Zhu Xiao-Hua. A digital-analog hybrid random number generator based on memristor. Acta Physica Sinica, 2015, 64(24): 240503. doi: 10.7498/aps.64.240503
    [14] Liu Dong-Qing, Cheng Hai-Feng, Zhu Xuan, Wang Nan-Nan, Zhang Chao-Yang. Research progress of memristors and memristive mechanism. Acta Physica Sinica, 2014, 63(18): 187301. doi: 10.7498/aps.63.187301
    [15] Xia Xiao-Fei, Wang Jun-Song. Influence of synaptic plasticity on dynamics of neural mass model:a bifurcation study. Acta Physica Sinica, 2014, 63(14): 140503. doi: 10.7498/aps.63.140503
    [16] Xu Hui, Tian Xiao-Bo, Bu kai, Li Qing-Jiang. Influence of temperature change on conductive characteristics of titanium oxide memristor. Acta Physica Sinica, 2014, 63(9): 098402. doi: 10.7498/aps.63.098402
    [17] Jiang Zhong-Ying, Zhang Guo-Liang, Ma Jing, Zhu Tao. Lipid exhange between membranes: effects of temperature and ionic strength. Acta Physica Sinica, 2013, 62(1): 018701. doi: 10.7498/aps.62.018701
    [18] Jia Lin-Nan, Huang An-Ping, Zheng Xiao-Hu, Xiao Zhi-Song, Wang Mei. Progress of memristor modulated by interfacial effect. Acta Physica Sinica, 2012, 61(21): 217306. doi: 10.7498/aps.61.217306
    [19] Zhao Xue-Yan, Yuan Ping, Wang Jie, Shen Xiao-Zhi, Guo Yi-Xiao, Qiao Hong-Zhen. Theoretical study on the rule of plasma temperature decay in the process of lightning dissipation. Acta Physica Sinica, 2009, 58(5): 3243-3247. doi: 10.7498/aps.58.3243
    [20] Song Qing-Gong, Jiang En-Yong. Study on the structural and energetic properties of two-dimensional ground state of Ag+ ion-vacancy in fast ionic conductor AgxTiS2. Acta Physica Sinica, 2008, 57(3): 1823-1828. doi: 10.7498/aps.57.1823
Metrics
  • Abstract views:  5884
  • PDF Downloads:  393
  • Cited By: 0
Publishing process
  • Received Date:  19 December 2014
  • Accepted Date:  16 March 2015
  • Published Online:  05 July 2015

/

返回文章
返回