AN INCIPIENT EDGE DISLOCATION IN EPITAXIAL WURTZITE GaN

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Abstract
A structural defect of incipient edge dislocation in epitaxial wurtzite GaN film is confirmed in this paper. The defect is observed as an isolated (1120) boundary segment within one large perfect crystal area by high-resolution electron microscopy. It has the local atom configuration as a part of (1120) high-energy like-atom bonding boundary together with two 1/6［1120］ partial edge dislocations at its two ends. The origin of the defect is explored from the mechanism of epitaxial growth.
Authors and contacts
WANG SHAO-QING³,

LIU QUAN-PU¹,

YE HENG-QIANG²

(1)英国剑桥大学材料科学与冶金学系,英国剑桥 CB2 3QZ; (2)中国科学院金属研究所固体原子像开放研究实验室,沈阳 110015; (3)中国科学院金属研究所固体原子像开放研究实验室,沈阳 110015;英国剑桥大学材料科学与冶金学系,英国剑桥 CB2 3QZ
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