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Magnetic coupling properties of Gd-doped ZnO nanowires studied by first-principles calculations

Zhang Yan-Ru Zhang Lin Ren Jun-Feng Yuan Xiao-Bo Hu Gui-Chao

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Magnetic coupling properties of Gd-doped ZnO nanowires studied by first-principles calculations

Zhang Yan-Ru, Zhang Lin, Ren Jun-Feng, Yuan Xiao-Bo, Hu Gui-Chao
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  • Magnetic coupling properties of Gd-doped ZnO nanowires are studied theoretically by using first-principles calculations. Several positions of Zn atoms that may be substituted by Gd atoms in ZnO nanowires are discussed. Numerical results show that the magnetic coupling is ferromagnetic when the two Gd atoms doped in ZnO nanowires are near each other. Injection of suitable amount of electrons can enforce these ferromagnetic properties in Gd-doped ZnO nanowires. It is also found that s-f coupling becomes remarkable when the Gd atoms are doped in ZnO nanowires, making the ferromagnetic coupling state more stable than the anti-ferromagnetic coupling state, and this is also the mechanism to elucidate the origination of ferromagnetic state in Gd-doped ZnO nanowires in experiments. These results will give a theoretical support for those who found experimentally that Gd-doped ZnO nanowires show ferromagnetic properties.
      Corresponding author: Ren Jun-Feng, renjf@sdnu.edu.cn
    • Funds: Project supported by the Shandong Province Higher Educational Science and Technology Program, China (Grant No. J13LA05) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2014AM017).
    [1]

    Dietl T 2010 Nat. Mater. 9 965

    [2]

    Lin W X, Weng Z Z, Zhang J M, Huang Z G 2011 Chin.Phys. B 20 027103

    [3]

    Yi J B, Lim C C, Xing G Z, Fan H M, Van L H, Huang S L, Yang K S, Huang X L, Qin X B, Wang B Y, Wu T, Wang L, Zhang H T, Gao X Y, Liu T, Wee A T, Feng Y P, Ding J 2010 Phys. Rev. Lett. 104 137201

    [4]

    Zheng Y 2013 Appl. Phys. A 112 241

    [5]

    Sato K, Bergqvist L, Kudrnovsky J, Dederichs P H, Eriksson O, Turek I, Sanyal B, Bouzerar G, Katayama-Yoshida H, Dinh V A, Fukushima T, Kizaki H, Zeller R 2010 Rev. Mod. Phys. 82 1633

    [6]

    Lu Y B, Dai Y, Guo M, Yu L, Huang B 2013 Phys. Chem. Chem. Phys. 15 5208

    [7]

    Chen R, Ye Q L, He T, Ta V D, Ying Y, Tay Y Y, Wu T, Sun H 2013 Nano. Lett. 13 734

    [8]

    Segura-Ruiz J, Martinez-Criado G, Chu M H, Geburt S, Ronning C 2011 Nano Lett. 11 5322

    [9]

    Chen Q, Wang J L 2009 Chem. Phys. Lett. 474 336

    [10]

    Banerjee S, Mandal M, Gayathrib N, Sardar M 2007 Appl. Phys. Lett. 91 182501

    [11]

    Hong N H, Sakai J, Brize V 2007 J. Phys.: Condens. Mater. 19 036219

    [12]

    Xu Q, Schmidt H, Zhou S Q, Potzger K, Helm M, Hochmuth H, Lorenz M, Setzer A, Esquinazi P, Meinecke C, Grundmann M 2008 Appl. Phys. Lett. 92 082508

    [13]

    Dietl T, Ohno H, Matsukura F 2011 Phys. Rev. B 63 195205

    [14]

    Sain S, Bhattacharjee J, Mukherjee M, Das D, Pradhan S K 2012 J. Alloys Compd. 519 112

    [15]

    Chikoidze E, Boshta M, Sayed M H, Dumont Y 2013 J. Appl. Phys. 113 043713

    [16]

    Zhang F C, Dong J T, Zhang W H, Zhang Z Y 2013 Chin. Phys. B 22 027503

    [17]

    Guptam M K, Kumar B 2011 J. Mater. Chem. 10 1039

    [18]

    Kumar S, Sahare P D 2012 J. Rare Rarths 30 761

    [19]

    El Hachimi A G, Zaari H, Benyoussef A, El Yadari M, El Kenz A 2014 J. Rare Rarths 32 715

    [20]

    Dalpian G M, Wei S H 2005 Phys. Rev. B 72 115201

    [21]

    Shi H L, Zhang P, Li S S, Xia J B 2009 J. Appl. Phys. 106 023910

    [22]

    Yang Y H, Feng Y P, Zhu H G, Yang G W 2010 J. Appl. Phys. 107 053502

    [23]

    Bantouna I, Goumri-Said S, Kanoun M B, Manchon A, Roqan I, Schwingenschlög U 2011 J. Appl. Phys. 109 083929

    [24]

    Dakhel A A, El-Hilo M 2010 J. Appl. Phys. 107 123905

    [25]

    Ma X Y 2012 Thin Solid Films 520 5752

    [26]

    Kresse G, Furthmuller J 1996 Phys. Rev. B 54 11169

    [27]

    Blöchl P E 1994 Phys. Rev. B 50 17953

    [28]

    Kresse G, Joubert D 1999 Phys. Rev. B 59 1758

    [29]

    Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865

    [30]

    Kisi E H, Elcombe M M 1989 Acta Cryst. C: Cryst. Struct. Commun. 45 1867

    [31]

    Ungureanu M, Schmidt H, Wenckstern H V, Hochmuth H, Lorenz M, Grundmann M, Fecioru-Morariu M, Güntherodt G 2007 Thin solid Films 515 8761

  • [1]

    Dietl T 2010 Nat. Mater. 9 965

    [2]

    Lin W X, Weng Z Z, Zhang J M, Huang Z G 2011 Chin.Phys. B 20 027103

    [3]

    Yi J B, Lim C C, Xing G Z, Fan H M, Van L H, Huang S L, Yang K S, Huang X L, Qin X B, Wang B Y, Wu T, Wang L, Zhang H T, Gao X Y, Liu T, Wee A T, Feng Y P, Ding J 2010 Phys. Rev. Lett. 104 137201

    [4]

    Zheng Y 2013 Appl. Phys. A 112 241

    [5]

    Sato K, Bergqvist L, Kudrnovsky J, Dederichs P H, Eriksson O, Turek I, Sanyal B, Bouzerar G, Katayama-Yoshida H, Dinh V A, Fukushima T, Kizaki H, Zeller R 2010 Rev. Mod. Phys. 82 1633

    [6]

    Lu Y B, Dai Y, Guo M, Yu L, Huang B 2013 Phys. Chem. Chem. Phys. 15 5208

    [7]

    Chen R, Ye Q L, He T, Ta V D, Ying Y, Tay Y Y, Wu T, Sun H 2013 Nano. Lett. 13 734

    [8]

    Segura-Ruiz J, Martinez-Criado G, Chu M H, Geburt S, Ronning C 2011 Nano Lett. 11 5322

    [9]

    Chen Q, Wang J L 2009 Chem. Phys. Lett. 474 336

    [10]

    Banerjee S, Mandal M, Gayathrib N, Sardar M 2007 Appl. Phys. Lett. 91 182501

    [11]

    Hong N H, Sakai J, Brize V 2007 J. Phys.: Condens. Mater. 19 036219

    [12]

    Xu Q, Schmidt H, Zhou S Q, Potzger K, Helm M, Hochmuth H, Lorenz M, Setzer A, Esquinazi P, Meinecke C, Grundmann M 2008 Appl. Phys. Lett. 92 082508

    [13]

    Dietl T, Ohno H, Matsukura F 2011 Phys. Rev. B 63 195205

    [14]

    Sain S, Bhattacharjee J, Mukherjee M, Das D, Pradhan S K 2012 J. Alloys Compd. 519 112

    [15]

    Chikoidze E, Boshta M, Sayed M H, Dumont Y 2013 J. Appl. Phys. 113 043713

    [16]

    Zhang F C, Dong J T, Zhang W H, Zhang Z Y 2013 Chin. Phys. B 22 027503

    [17]

    Guptam M K, Kumar B 2011 J. Mater. Chem. 10 1039

    [18]

    Kumar S, Sahare P D 2012 J. Rare Rarths 30 761

    [19]

    El Hachimi A G, Zaari H, Benyoussef A, El Yadari M, El Kenz A 2014 J. Rare Rarths 32 715

    [20]

    Dalpian G M, Wei S H 2005 Phys. Rev. B 72 115201

    [21]

    Shi H L, Zhang P, Li S S, Xia J B 2009 J. Appl. Phys. 106 023910

    [22]

    Yang Y H, Feng Y P, Zhu H G, Yang G W 2010 J. Appl. Phys. 107 053502

    [23]

    Bantouna I, Goumri-Said S, Kanoun M B, Manchon A, Roqan I, Schwingenschlög U 2011 J. Appl. Phys. 109 083929

    [24]

    Dakhel A A, El-Hilo M 2010 J. Appl. Phys. 107 123905

    [25]

    Ma X Y 2012 Thin Solid Films 520 5752

    [26]

    Kresse G, Furthmuller J 1996 Phys. Rev. B 54 11169

    [27]

    Blöchl P E 1994 Phys. Rev. B 50 17953

    [28]

    Kresse G, Joubert D 1999 Phys. Rev. B 59 1758

    [29]

    Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865

    [30]

    Kisi E H, Elcombe M M 1989 Acta Cryst. C: Cryst. Struct. Commun. 45 1867

    [31]

    Ungureanu M, Schmidt H, Wenckstern H V, Hochmuth H, Lorenz M, Grundmann M, Fecioru-Morariu M, Güntherodt G 2007 Thin solid Films 515 8761

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Publishing process
  • Received Date:  11 February 2015
  • Accepted Date:  24 April 2015
  • Published Online:  05 September 2015

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