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Frabrication and properties of self-powered ultraviolet detectors based on one-demensional ZnO nanomaterials

Qi Jun-Jie Xu Min-Xuan Hu Xiao-Feng Zhang Yue

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Frabrication and properties of self-powered ultraviolet detectors based on one-demensional ZnO nanomaterials

Qi Jun-Jie, Xu Min-Xuan, Hu Xiao-Feng, Zhang Yue
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  • ZnO micro/nanowires were synthesized by chemical vapor deposition method. The morphology and structure of the products have been characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL) and micro-Raman scattering spectrometer, etc. Results show that the surface of the highly uniform ZnO wire is smooth and the as-synthesized ZnO wires show high crystal quality. Three types of UV detector are constructed using a single ZnO nanowire with different contact characteristics, and their corresponding performances are investigated systematically by using Keithley 4200-SCS and other equipments. All of the three different devices exhibit good rectifying characters and significant responsivity to ultraviolet light. The devices show self-driven features at zero bias. Compared with the devices made from Schottky contact and ZnO/PEDOT:PSS film, the present single ZnO nanowire/p-Si film devices with heterojunctions have the best self-powered function, which can be attributed to the stronger built-in electric field as well as the smaller dark current due to the insulating layer on the p-Si film. At zero bias, the fabricated ZnO nanowire/p-Si film device can deliver a dark current of 1.210-3 nA and a high photosensitivity of about 4.5103 under UV illumination. The response of the devices made from ZnO nanowire/p-Si film to UV illumination in air is pretty fast with the rise time of about 0.7 s and the fall time of about 1 s, which could be attributed to the fact that the photo-generated electron-hole pairs in the depletion layer is quickly separated by the built-in electric field, leading to a rapid response speed and a larger photocurrent. Comparison among the three kinds of devices indicates that the devices made from ZnO nanowire/p-Si film are the best candidate for UV detectors.
      Corresponding author: Qi Jun-Jie, junjieqi@ustb.edu.cn;yuezhang@ustb.edu.cn ; Zhang Yue, junjieqi@ustb.edu.cn;yuezhang@ustb.edu.cn
    • Funds: Project supported by the Major Research Plan of the National Natural Science Foundation of China (Grant No. 2013CB932601), the Special Projects of International Cooperation in Science and Technology (Grant No. 2012DFA50990), the National Natural Science Foundation of China (Grant Nos. 51232001, 51172022), and the Beijing municipal education commission project and the Yangtze river team project.
    [1]

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    [2]

    Jang E S, Won J H, Kim Y W, Chen X Y, Choy J H 2010 Cryst. Eng. Comm. 12 3467

    [3]

    Sun H, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 3479 (in Chinese) [孙晖, 张琦锋, 吴锦雷 2007 物理学报 56 3479]

    [4]

    Liu R B, Zou B S 2011 Chin. Phys. B 20 047104

    [5]

    Das S N, Moon K J, Kar J P, Choi J H, Xiong J J 2010 Appl. Phys. Lett. 97 022103

    [6]

    Dai Y, Zhang Y, Li Q K, Nan C W 2002 Chem. Phys. Lett. 358 83

    [7]

    Dai Y, Zhang Y, Bai Y Q, Wang Z L 2003 Chem. Phys. Lett. 375 96

    [8]

    Chen H S, Qi J J, Zhang Y, Zhang X M, Liao Q L, Huang Y H 2007 Appl. Surf. Sci. 253 8901

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    Wang Z L, Poncharal P, De Heer W A 2000 Pure appl. Chem. 72 209

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    Poncharal P, Wang Z L, Ugarte D 1999 Sci. 283 1513

    [11]

    Heo Y W, Tien L C, Norton D P 2004 Appl. Phys. Lett. 85 2002

    [12]

    Yang Y, Qi J J, Liao Q L 2009 Appl. Phys. Lett. 95 123112

    [13]

    Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, Bao X Y, Lo Y H, Wang D 2007 Nano Lett. 7 1003

    [14]

    Jha S K, Liu C P, Chen Z H, Chen K J, Bello I, Zapien J A, Zhang W J, Lee S T 2010 J. Phys. Chem. C 114 7999

    [15]

    Lin W, Yan X, Zhang X 2011 Solid State Commun. 151 1860

    [16]

    Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 052901]

    [17]

    Yang Y, Guo W, Qi J, Zhang Y 2010 Appl. Phys. Lett. 97 223113

    [18]

    Bai Z M, Yan X Q, Chen X, Liu H S, Shen Y W, Zhang Y 2013 Curr. Appl. Phys. 13 165

    [19]

    Zhou J, Gu Y, Hu Y, Mai W, Yeh P H, Bao G, Sood A K, Polla D J, Wang Z L 2009 Appl. Phys. Len. 94 191103

    [20]

    Kamiya T, Tajima K, Nomura K 2008 Phys. Status Solidi 205 1929

    [21]

    Wu C X, Zhou M, Feng C C, Yuan R, Li G, Ma W W, Cai L 2008 Acta Phys. Sin. 57 3887 (in Chinese) [吴春霞, 周明, 冯程程, 袁润, 李刚, 马伟伟, 蔡兰 2008 物理学报 57 3887]

    [22]

    Chen K J, Hung F Y, Chang S J, Young S J 2009 J. Alloy Compd 479 674

    [23]

    Fang F, Zhao D X, Li B H, Zhang Z Z, Shen D Z, Wang X H 2010 J. Phys. Chem. C 114 12477

  • [1]

    Lee C H, Kim Y J, Lee J, Hong Y J, Jeon J M, Kim M, Hong S, Yi G C 2011 Nanotechnology 22 055205

    [2]

    Jang E S, Won J H, Kim Y W, Chen X Y, Choy J H 2010 Cryst. Eng. Comm. 12 3467

    [3]

    Sun H, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 3479 (in Chinese) [孙晖, 张琦锋, 吴锦雷 2007 物理学报 56 3479]

    [4]

    Liu R B, Zou B S 2011 Chin. Phys. B 20 047104

    [5]

    Das S N, Moon K J, Kar J P, Choi J H, Xiong J J 2010 Appl. Phys. Lett. 97 022103

    [6]

    Dai Y, Zhang Y, Li Q K, Nan C W 2002 Chem. Phys. Lett. 358 83

    [7]

    Dai Y, Zhang Y, Bai Y Q, Wang Z L 2003 Chem. Phys. Lett. 375 96

    [8]

    Chen H S, Qi J J, Zhang Y, Zhang X M, Liao Q L, Huang Y H 2007 Appl. Surf. Sci. 253 8901

    [9]

    Wang Z L, Poncharal P, De Heer W A 2000 Pure appl. Chem. 72 209

    [10]

    Poncharal P, Wang Z L, Ugarte D 1999 Sci. 283 1513

    [11]

    Heo Y W, Tien L C, Norton D P 2004 Appl. Phys. Lett. 85 2002

    [12]

    Yang Y, Qi J J, Liao Q L 2009 Appl. Phys. Lett. 95 123112

    [13]

    Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, Bao X Y, Lo Y H, Wang D 2007 Nano Lett. 7 1003

    [14]

    Jha S K, Liu C P, Chen Z H, Chen K J, Bello I, Zapien J A, Zhang W J, Lee S T 2010 J. Phys. Chem. C 114 7999

    [15]

    Lin W, Yan X, Zhang X 2011 Solid State Commun. 151 1860

    [16]

    Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 052901]

    [17]

    Yang Y, Guo W, Qi J, Zhang Y 2010 Appl. Phys. Lett. 97 223113

    [18]

    Bai Z M, Yan X Q, Chen X, Liu H S, Shen Y W, Zhang Y 2013 Curr. Appl. Phys. 13 165

    [19]

    Zhou J, Gu Y, Hu Y, Mai W, Yeh P H, Bao G, Sood A K, Polla D J, Wang Z L 2009 Appl. Phys. Len. 94 191103

    [20]

    Kamiya T, Tajima K, Nomura K 2008 Phys. Status Solidi 205 1929

    [21]

    Wu C X, Zhou M, Feng C C, Yuan R, Li G, Ma W W, Cai L 2008 Acta Phys. Sin. 57 3887 (in Chinese) [吴春霞, 周明, 冯程程, 袁润, 李刚, 马伟伟, 蔡兰 2008 物理学报 57 3887]

    [22]

    Chen K J, Hung F Y, Chang S J, Young S J 2009 J. Alloy Compd 479 674

    [23]

    Fang F, Zhao D X, Li B H, Zhang Z Z, Shen D Z, Wang X H 2010 J. Phys. Chem. C 114 12477

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Publishing process
  • Received Date:  03 February 2015
  • Accepted Date:  07 April 2015
  • Published Online:  05 September 2015

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