Acta Physica Sinica
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Acta Physica Sinica  2015, Vol. 64 Issue (19): .     DOI: 10.7498/aps.64.198801
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Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon
Chen Jian-Hui1, Yang Jing1, Shen Yan-Jiao1, Li Feng2, Chen Jing-Wei1, Liu Hai-Xu1, Xu Ying1, Mai Yao-Hua1
1. IHebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China;
2. State Key Laboratory of Photovoltaic Materials & Technology, Yingli Group Co., Ltd., Baoding 071051, China

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