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Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment

Wang Chong Zhao Meng-Di Pei Jiu-Qing He Yun-Long Li Xiang-Dong Zheng Xue-Feng Mao Wei Ma Xiao-Hua Zhang Jin-Cheng Hao Yue

Citation:

Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment

Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue
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  • Abstract views:  5386
  • PDF Downloads:  245
  • Cited By: 0
Publishing process
  • Received Date:  10 August 2015
  • Accepted Date:  20 November 2015
  • Published Online:  05 February 2016

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