CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In<sub>0.2</sub>Ga<sub>0.8</sub>As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES
Acta Physica Sinica
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Acta Phys. Sin.  1998, Vol. 47 Issue (8): 1339-1345    
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CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES
YANG GUO-WEN1, J.WANG2, Y.WANG2, WEIKUN GE2, LU LI-WU3, ZHANG YAN-HUA3, WANG ZHAN-GUO3
(1)国家光电子工程中心,中国科学院半导体研究所,北京 100083; (2)香港科技大学物理系,香港九龙; (3)中国科学院半导体研究所半导体材料科学开放研究实验室,北京 100083
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