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Quantum metrological standards based on the fundamental physical constants are the trend of modern metrology because of their attributes such as high accuracy, high stability, and good reproducibility. The quantum Hall effect (QHE), which refers to the electronic charge e and the Planck constant h, is used to define the quantum resistance standard. The quantum Hall resistance (RH) of h/2e2 at the filling factori=2 is used as the standard. It is obvious that the RH is non-integral. However the resistors that need to be calibrated each have a decimal value, such as 1 k, 10 k, 100 k, etc. The calibration chain from the non-integral RH to the real resistor is long. The quantum Hall array resistance standards (QHARSs) are invented to solve this problem. The QHARS which are based on the decimal resistance values can shorten the calibration chain, improve the resistance transfer accuracy, and finally realize the quantization of the whole resistance calibration chain. The QHARS can also replace the traditional physical transfer standard resistor and realize the quantization of the transfer standard resistor. The decimal QHARS devices can be realized by connecting single QHE devices in series or parallel with the multiple link technology. In this paper we report the design, fabrication and characterization of a 1 k QHARS device based on the GaAs/AlxGa1-xAs heterostructures. In our design, the 1 k array device consists of only 29 Hall bars. The nominal value of the device is 999.9999658 with a relative deviation of -3.4210-8 from 1 k. The ratio between the maximum and minimum current flowing through the Hall bars is as small as 14.5. The 1 k QHARS devices are measured in the national resistance standard system at a temperature of 1.5 K. The measurement is taken at the central magnetic field of the 2nd quantum Hall plateau. We compare our 1 k QHARS resistor with a 1 k transfer standard resistor using the direct current comparator. The 1 k transfer standard resistor has already been calibrated in advance with our single QHR standard by cryogenic current comparator. Therefore the resistance of our 1 k QHARS resistor can be obtained. The relative deviation between the measured resistance value and the designed value is -1.9610-7with a standard uncertainty of 2.0710-7. The results show that we have realized the 1 k quantum Hall resistance standard device which can be used for the resistance calibration.
[1] von Klitzing K 1986Rev. Mod. Phys. 58 519
[2] Delahaye F, Jeckelmann B 2003Metrologia 40 217
[3] Piquemal F, Geneves G, Delahaye F, Andre J, Patillon J, Frijlink P 1993IEEE Trans. Instrum. Meas. 42 264
[4] Zhang Z H, He Q, Li Z K, Liu Y 2005Acta Metrol. Sin. 4 31
[5] Delahaye F 1993J. Appl. Phys. 73 7914
[6] Ortolano M, Abrate M, Callegaro L 2015Metrologia 52 31
[7] Poirier W, Bounouh A, Piquemal F, André J P 2004Metrologia 41 285
[8] Kaneko N, Urano C, Itatani T, Kiryu S 2006CPEM 2006 Torino, Italy, August 24-29, 2006 p512
[9] Oe T, Matsuhiro K, Itatani T, Gorwadkar S, Kiryu S, Kaneko N 2013IEEE Trans. Instrum. Meas. 62 1755
[10] Zhong Y, Zhong Q, He Q, Lu Y F, Zhao J T, Li Z K, Zhang Z H, Chi Z T 2010CPEM 2010 Daejeon, Korea, June 13-18, 2010 p351
[11] Zhong Q, Li J J, Zhao J T, Zhao M K, Wang X S, Lu Y F, Zhong Y 2014CPEM 2014 Rio de Janeiro, Brazil, August 24-29, 2014 p544
[12] Zhong Q, Wang X S, Li J J, Zhou Z Q, Shi Y 2014CPEM 2014 Rio de Janeiro, Brazil, August 24-29, 2014 p542
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[1] von Klitzing K 1986Rev. Mod. Phys. 58 519
[2] Delahaye F, Jeckelmann B 2003Metrologia 40 217
[3] Piquemal F, Geneves G, Delahaye F, Andre J, Patillon J, Frijlink P 1993IEEE Trans. Instrum. Meas. 42 264
[4] Zhang Z H, He Q, Li Z K, Liu Y 2005Acta Metrol. Sin. 4 31
[5] Delahaye F 1993J. Appl. Phys. 73 7914
[6] Ortolano M, Abrate M, Callegaro L 2015Metrologia 52 31
[7] Poirier W, Bounouh A, Piquemal F, André J P 2004Metrologia 41 285
[8] Kaneko N, Urano C, Itatani T, Kiryu S 2006CPEM 2006 Torino, Italy, August 24-29, 2006 p512
[9] Oe T, Matsuhiro K, Itatani T, Gorwadkar S, Kiryu S, Kaneko N 2013IEEE Trans. Instrum. Meas. 62 1755
[10] Zhong Y, Zhong Q, He Q, Lu Y F, Zhao J T, Li Z K, Zhang Z H, Chi Z T 2010CPEM 2010 Daejeon, Korea, June 13-18, 2010 p351
[11] Zhong Q, Li J J, Zhao J T, Zhao M K, Wang X S, Lu Y F, Zhong Y 2014CPEM 2014 Rio de Janeiro, Brazil, August 24-29, 2014 p544
[12] Zhong Q, Wang X S, Li J J, Zhou Z Q, Shi Y 2014CPEM 2014 Rio de Janeiro, Brazil, August 24-29, 2014 p542
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