Acta Physica Sinica
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Acta Physica Sinica  2017, Vol. 66 Issue (16): .     DOI: 10.7498/aps.66.167301
CONDENSED MATTER:ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer
Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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