Two-dimensional hexagonal boron nitride based memristor

Wu Quan-Tan; Shi Tuo; Zhao Xiao-Long; Zhang Xu-Meng; Wu Fa-Cai; Cao Rong-Rong; Long Shi-Bing; Lü Hang-Bing; Liu Qi; Liu Ming

doi:10.7498/aps.66.217304

Abstract

Hexagonal boron nitride (h-BN) based resistive switching device is fabricated with the multilayer h-BN film serving as an active material. The device shows the coexistence of forming-free and self-compliance bipolar resistive switching behavior with reproducible switching endurance and long retention time. Moreover, the device in pulse mode shows analog resistive switching characteristics, i.e. the resistance states can be continuously tuned by successive voltage pulses. This suggests that the device is also capable of mimicking the synaptic weight changes in neuromorphic systems.

Keywords:

Authors and contacts

1.
Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
2.
University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Liu Qi, liuqi@ime.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61521064, 61422407, 61474136, 61334007, 61404164, 61574166, 61522408), the National Key RD Program of China (Grant Nos. 2017YFB0405603, 2016YFA0201803), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDPB0603).

References

[1]	Prakash A, Maikap S, Lai C S, Lee H Y, Chen W S, Chen F T, Tsai M J 2012 Jpn. J. Appl. Phys. 51 04DD06
[2]	Lee H Y, Chen Y S, Chen P S, Wu T Y, Chen F, Wang C C, Tzeng P J, Tsai M J, Lien C 2010 IEEE Electron Dev. Lett. 31 44
[3]	Su S, Jian X C, Wang F, Han Y M, Tian Y X, Wang X Y, Zhang H Z, Zhang K L 2016 Chin. Phys. B 25 107302
[4]	Tan T, Guo T, Wu Z, Liu Z 2016 Chin. Phys. B 25 117306
[5]	Gao X P, Fu L P, Chen C B, Yuan P, Li Y T 2016 Chin. Phys. B 25 106102
[6]	Park W Y, Kim G H, Seok J Y, Kim K M, Song S J, Lee M H, Hwang C S 2010 Nanotechnology 21 195201
[7]	Wen X Z, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[8]	Yang J J, Zhang M X, Strachan J P, Miao F, Pickett M D, Kelley R D, Medeiros-Ribeiro G, Williams R S 2010 Appl. Phys. Lett. 97 232102
[9]	Li Y T, Long S B, L H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu M 2011 Chin. Phys. B 20 017305
[10]	Shi T, Yin X B, Yang R, Guo X 2016 Phys. Chem. Chem. Phys. 18 9338
[11]	Zhao J W, Liu F J, Huang H Q, Hu Z F, Zhang X Q 2012 Chin. Phys. B 21 065201
[12]	Shi T, Yang R, Guo X 2016 Solid State Ionics 296 114
[13]	Shi T, Wu J F, Liu Y, Yang R, Guo X 2017 Adv. Electron. Mater. 3 1700046
[14]	Yao J, Lin J, Dai Y H, Ruan G D, Yan Z, Li L, Zhong L, Natelson D, Tour J M 2012 Nat. Commun. 3 1101
[15]	Liu S, Lu N, Zhao X, Xu H, Banerjee W, L H, Long S, Li Q, Liu Q, Liu M 2016 Adv. Mater. 28 10623
[16]	Hong S K, Kim J E, Kim S O, Cho B J 2011 J. Appl. Phys. 110 044506
[17]	Sangwan V K, Jariwala D, Kim I S, Chen K S, Marks T J, Lauhon L J, Hersam M C 2015 Nat. Nanotech. 10 403
[18]	Park S, Lee J, Kim H S, Park J B, Lee K H, Han S A, Hwang S, Kim S W, Shin H J 2015 ACS Nano 9 633
[19]	Yin J, Li J, Hang Y, Yu J, Tai G, Li X, Zhang Z, Guo W 2016 Small 12 2942
[20]	Qian K, Tay R Y, Nguyen V C, Wang J, Cai G, Chen T, Teo E H T, Lee P S 2016 Adv. Funct. Mater. 26 2176
[21]	Puglisi F M, Larcher L, Pan C, Xiao N, Shi Y, Hui F, Lanza M 2016 2016 IEEE International Electron Devices Meeting (IEDM) San Francisco, USA, December 3-7, 2016 p6651209
[22]	Suk J W, Kitt A, Magnuson C W, Hao Y, Ahmed S, An J, Swan A K, Boldberg B B, Ruoff R S 2011 ACS Nano 5 6916
[23]	Meng J, Zhang X, Wang Y, Yin Z, Liu H, Xia J, Wang H, You J, Jin P, Wang D, Meng X M 2017 Small 13 1604179
[24]	Song L, Ci L, Lu H, Sorokin P B, Jin C, Ni J, Kvashnin A G, Kvashnin D G, Lou J, Yakobson B I, Ajayan P M 2010 Nano Lett. 10 3209
[25]	Shi Y, Hamsen C, Jia X, Kim K K, Reina A, Hofmann M, Hsu A L, Zhang K, Li H, Juang Z Y, Dresselhaus M S, Li L J, Kong J 2010 Nano Lett. 10 4134
[26]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[27]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297

Cited By

[1]	Prakash A, Maikap S, Lai C S, Lee H Y, Chen W S, Chen F T, Tsai M J 2012 Jpn. J. Appl. Phys. 51 04DD06
[2]	Lee H Y, Chen Y S, Chen P S, Wu T Y, Chen F, Wang C C, Tzeng P J, Tsai M J, Lien C 2010 IEEE Electron Dev. Lett. 31 44
[3]	Su S, Jian X C, Wang F, Han Y M, Tian Y X, Wang X Y, Zhang H Z, Zhang K L 2016 Chin. Phys. B 25 107302
[4]	Tan T, Guo T, Wu Z, Liu Z 2016 Chin. Phys. B 25 117306
[5]	Gao X P, Fu L P, Chen C B, Yuan P, Li Y T 2016 Chin. Phys. B 25 106102
[6]	Park W Y, Kim G H, Seok J Y, Kim K M, Song S J, Lee M H, Hwang C S 2010 Nanotechnology 21 195201
[7]	Wen X Z, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[8]	Yang J J, Zhang M X, Strachan J P, Miao F, Pickett M D, Kelley R D, Medeiros-Ribeiro G, Williams R S 2010 Appl. Phys. Lett. 97 232102
[9]	Li Y T, Long S B, L H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu M 2011 Chin. Phys. B 20 017305
[10]	Shi T, Yin X B, Yang R, Guo X 2016 Phys. Chem. Chem. Phys. 18 9338
[11]	Zhao J W, Liu F J, Huang H Q, Hu Z F, Zhang X Q 2012 Chin. Phys. B 21 065201
[12]	Shi T, Yang R, Guo X 2016 Solid State Ionics 296 114
[13]	Shi T, Wu J F, Liu Y, Yang R, Guo X 2017 Adv. Electron. Mater. 3 1700046
[14]	Yao J, Lin J, Dai Y H, Ruan G D, Yan Z, Li L, Zhong L, Natelson D, Tour J M 2012 Nat. Commun. 3 1101
[15]	Liu S, Lu N, Zhao X, Xu H, Banerjee W, L H, Long S, Li Q, Liu Q, Liu M 2016 Adv. Mater. 28 10623
[16]	Hong S K, Kim J E, Kim S O, Cho B J 2011 J. Appl. Phys. 110 044506
[17]	Sangwan V K, Jariwala D, Kim I S, Chen K S, Marks T J, Lauhon L J, Hersam M C 2015 Nat. Nanotech. 10 403
[18]	Park S, Lee J, Kim H S, Park J B, Lee K H, Han S A, Hwang S, Kim S W, Shin H J 2015 ACS Nano 9 633
[19]	Yin J, Li J, Hang Y, Yu J, Tai G, Li X, Zhang Z, Guo W 2016 Small 12 2942
[20]	Qian K, Tay R Y, Nguyen V C, Wang J, Cai G, Chen T, Teo E H T, Lee P S 2016 Adv. Funct. Mater. 26 2176
[21]	Puglisi F M, Larcher L, Pan C, Xiao N, Shi Y, Hui F, Lanza M 2016 2016 IEEE International Electron Devices Meeting (IEDM) San Francisco, USA, December 3-7, 2016 p6651209
[22]	Suk J W, Kitt A, Magnuson C W, Hao Y, Ahmed S, An J, Swan A K, Boldberg B B, Ruoff R S 2011 ACS Nano 5 6916
[23]	Meng J, Zhang X, Wang Y, Yin Z, Liu H, Xia J, Wang H, You J, Jin P, Wang D, Meng X M 2017 Small 13 1604179
[24]	Song L, Ci L, Lu H, Sorokin P B, Jin C, Ni J, Kvashnin A G, Kvashnin D G, Lou J, Yakobson B I, Ajayan P M 2010 Nano Lett. 10 3209
[25]	Shi Y, Hamsen C, Jia X, Kim K K, Reina A, Hofmann M, Hsu A L, Zhang K, Li H, Juang Z Y, Dresselhaus M S, Li L J, Kong J 2010 Nano Lett. 10 4134
[26]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[27]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297

Catalog

Vol. 66, Issue 21 - 2017-11-05

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