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During the past few decades, surface plasmons (SPs) have become a research hotspot. The SPs are the collective oscillations of free electrons at the interface between metal and dielectric surrounding. Localized surface plasmon resonance (LSPR) for metal nanoparticles (NPs) has a wide application in the light emission enhancement by the selective photon absorption and by increasing local electromagnetic field. Nowadays, many achievements of SP-enhanced-emissions are applied to light emitting diodes. With the advantages of the direct wide band gap (3.37 eV) and large exciton binding energy (60 meV), zinc oxide (ZnO), which is considered as a potential material, has a wide range of applications, especially in ultraviolet (UV) optoelectronic devices. However, the low photoluminescence efficiency of ZnO limits the commercial applications of ZnO-devices. The relevant research shows that the selection of different metal NPs, such as platinum (Pt), aluminum (Al), argentum (Ag), aurum (Au), is one of the approaches to improving the UV emission from ZnO. In this study, two-dimensional arrays of Al NPs are used to improve the LSPR photoluminescence efficiency from ZnO grown by the atomic layer deposition (ALD). The two-dimensional arrays of Al NPs are fabricated on the surfaces of p-type Gallium nitride (GaN) substrates by colloid lithography. With the air-liquid interface self-assembly, the monolayer masks for colloid lithography are obtained on the substrates of p-type GaN. Then, after a 50-nm Al layer is deposited by thermal evaporation, the Al NPs’ arrays are gained by being dipped into toluene and extra sonication to remove the masks. Finally, 15 nm Al2O3 and 200 nm ZnO films are deposited in sequence by ALD at a temperature of 125 ℃. The extinction spectra of Al NPs’ arrays are acquired by an ultraviolet-visible spectrophotometer. The results of the extinction spectra suggest that the radiative recombination rate is increased by the resonance coupling between the localized surface plasmons (LSP) of the Al NPs arrays and the excitons of the ZnO. A 1.91-fold enhancement of photoluminescence integral intensity in band-edge emission is measured because of the Al NP arrays coupled with ZnO. The result means that the LSP of the Al NPs’ arrays can increase the UV-emission of the ZnO. Therefore, this cost-effective and facile approach can be used in high-performance optoelectronic devices.
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图 1 (a) PS球阵列SEM图; (b) Al纳米颗粒阵列SEM图
Figure 1. (a) The SEM image of PS arrays; (b) the SEM image of Al nanoparticle arrays.
图 2 引入Al纳米颗粒前后ZnO的PL光谱
Figure 2. Comparison of ZnO photoluminescence spectra with and without Al nanoparticles
图 3 Al纳米颗粒的吸收谱
Figure 3. The absorption spectrum of Al nanoparticles.
图 4 (a)无Al纳米颗粒ZnO薄膜的AFM图; (b)有Al纳米颗粒ZnO薄膜的AFM图
Figure 4. The AFM image of ZnO without Al nanoparticls; (b) the AFM image of ZnO with Al nanoparticls.
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[1] You D T, Xu C X, Qin F F, Zhu Z, Manohari A G, Xu W, Zhao J, Liu W 2018 Sci. Bull. 63 38
Google Scholar
[2] Lu Y J, Shi Z F, Shan C X, Shen D Z 2017 Chin. Phys. 26 047703
Google Scholar
[3] 李江江, 高志远, 薛晓玮, 李慧敏, 邓军, 崔碧峰, 邹德恕, 2016 物理学报 65 118104
Google Scholar
Li J J, Gao Z Y, Xue X W, Li H M, Deng J, Cui B F, Zou D S 2016 cta Phys. Sin. 65 118104
Google Scholar
[4] 任艳东, 郝淑娟, 邱忠阳 2013 物理学报 62 147302
Google Scholar
Ren Y D, Hao S J, Qiu Z Y 2013 Acta Phys. Sin. 62 147302
Google Scholar
[5] 邱东江, 范文志, 翁圣, 吴惠桢, 王俊 2011 物理学报 60 087301
Google Scholar
Qiu D J, Fan W Z, Weng S, Wu H Z, Wang J 2011 Acta Phys. Sin. 60 087301
Google Scholar
[6] Yang L, Liu W, Xu H, Ma J, Zhang C, Liu C, Wang Z, Liu Y 2017 J. Mater. Chem. C 5 3288
Google Scholar
[7] Feng W, Jing A, Li J, Liang G 2016 Optoe. Lett. 12 195
Google Scholar
[8] Zhang S G, Zhang X W, Yin Z G, Wang J X, Si F T, Gao H L, Dong J J, Liu X 2012 J. Appl. Phys. 112 013112
Google Scholar
[9] Liu W Z, Xu H Y, Zhang L X, Zhang C, Ma J G, Wang J N, Liu Y C 2012 Appl. Phys. Lett. 101 142101
Google Scholar
[10] Zhang S G, Zhang X W, Yin Z G, Wang J X, Dong J J, Gao H L, Si F T, Sun S S, Tao Y 2011 Appl. Phys. Lett. 99 181116
Google Scholar
[11] Chan G H, Zhao J, Schatz G C, van Duyne R P 2008 J. Phys. Chem. C 112 13958
Google Scholar
[12] Wu K W, Lu Y F, He H P, Huang J Y, Zhao B H, Ye Z Z 2011 J. Appl. Phys. 110 601
[13] Lin Y 2013 Ph. D. Dissertation (Wuhan: Wuhan University) (in Chinese)
[14] Kao C C, Su Y K, Lin C L, Chen J J 2010 IEEE Photonic. Tech. L. 22 984
Google Scholar
[15] Liu K W, Tang Y D, Cong C X, Sum T C, Huan A C H, Shen Z X, Wang L, Jiang F Y, Sun X W, Sun H D 2009 Appl. Phys. Lett. 94 151102
Google Scholar
[16] 刘斌斌, 肖湘衡, 吴伟, 任峰, 蒋昌忠 2011 武汉大学学报: 理学版 57 205
Liu B B, Xiao X H, Wu W, Ren F, Jiang C Z 2011 J. Wuhan Univ.: Science Edition 57 205
[17] Zheng C 2012 Ph. D. Dissertation (Nanjing: Nanjing University) (in Chinese)
[18] 陈超 2015 Ph. D. Dissertation (Wuhan: Wuhan University) (in Chinese)
[19] Zhang H, Su X, Wu H, Liu C 2019 J. Alloy. Compd. 772 460
Google Scholar
[20] 马勇, 王万录, 廖克俊, 吕建伟, 孙晓楠 2004 功能材料 35 139
Google Scholar
Ma Y, Wang W L, Liao K J, Lü J W, Sun X L 2004 J. Funct. Mater. 35 139
Google Scholar
[21] Zou S L, Janel N, Schatz G C 2004 J. Chem. Phys. 120 10871
Google Scholar
[22] Shen Y Z, Swiatkiewicz J, Lin T C, Markowicz P, Prasad P N 2002 J. Phys. Chem. B 106 4040
Google Scholar
[23] Zhang J Y, Ye Y H, Wang X Y, Rochon P, Xiao M 2005 Phys. Rev. B 72 201306
Google Scholar
[24] Komarala V K, Rakovich Y P, Bradley A L, Byrne S J, Gun’ko Y K, Gaponik N, Eychmüller A 2006 Appl. Phys. Lett. 89 253118
Google Scholar
[25] Gontijo I, Boroditsky M, Yablonovitch E, Keller S, Mishra U, DenBaars S 1999 Phys. Rev. B 60 11564
Google Scholar
[26] Bagnall D M, Chen Y F, Zhu Z, Yao T, Shen M Y, Goto T 1998 Appl. Phys. Lett. 73 1038
Google Scholar
[27] 张丽, 蒋昌忠, 任峰, 石瑛, 付强 2004 功能材料 35 160
Google Scholar
Zhang L, Jiang C Z, Ren F, Shi Y, Fu Q 2004 J. Funct. Mater. 35 160
Google Scholar
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