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Gallium nitride (GaN) nanobelt with a quasi-one-dimensional structure possesses good piezoelectric and photoelectric properties. In this paper, the electromechanical coupling properties of single GaN nanobelt under optical modulation are studied by conductive atomic force microscope. The GaN nanobelts with good crystallization are prepared by the chemical vapor deposition method, then they are ultrasonically dispersed on a highly oriented pyrolysis graphite substrate. The conductive probe is used as a microelectrode to construct the two-terminal piezoelectric device based on a single GaN nanobelt, which has good electromechanical coupling performance. By changing the loading force of the probe and introducing an external light source to regulate the current transport properties of GaN nanobelt, the coupling between mechanical and semiconducting properties under light modulating is studied. It is found that the coupling between mechanical and semiconducting performance of the single GaN nanobelt can be effectively modulated by an external light source, and the electromechanical switch ratio of the single GaN nanobelt increases obviously in the presence of light. With the loading force increasing, the current response of the single GaN nanobelt increases but the rectification characteristics decrease. Finally, the experimental results are explained by the piezoelectric electronics and photoconductivity theory. This work is expected to provide a scientific basis for the performance modulation of nano-piezoelectric optoelectronic devices based on low-dimensional GaN nanomaterials.
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图 1 基于C-AFM的测试装置示意图
Figure 1. Schematic diagram of C-AFM measurement setup.
图 2 (a) GaN纳米带粉末XRD图谱; (b) GaN纳米带粉末SEM图像; (c)单根GaN纳米带AFM二维形貌图及(d)三维形貌图
Figure 2. (a) XRD scans and (b) SEM image of the as-prepared GaN nanobelt powder; (c) 2-D and (d) 3-D AFM morphology image of a single GaN nanobelt.
图 3 (a)−(c)暗场下单根GaN纳米带的二维电流形貌图, 加载力分别为30, 50, 70 nN; (e)−(f)光场下单根GaN纳米带的二维电流形貌图, 加载力分别为30, 50, 70 nN; 插图为电流形貌图截面处的电流值
Figure 3. (a)−(c) 2-D current topography of a single GaN nanobelt under dark condition with the loading forces of 30 nN, 50 nN and 70 nN, respectively; (d)−(f) 2-D current topography of a single GaN nanobelt under light condition with the loading forces of 30 nN, 50 nN and 70 nN, respectively. The insert shows the current value at the cross section of 2-D current topography.
图 4 GaN纳米带单点I-V曲线 (a), (b)暗场不同加载力下的I-V曲线及对数坐标形式; (c), (d)光场不同加载力下的I-V曲线及对数坐标形式
Figure 4. Single point I-V curves of a single GaN nanobelt: (a), (b) I-V curve and its logarithmic coordinate with different loading forces under dark condition; (c), (d) I-V curve and its logarithmic coordinate with different loading forces under light condition.
图 5 明暗场不同加载力下单根GaN纳米带的I-t曲线 (a) 30 nN; (b) 40 nN
Figure 5. I-t curves of a single GaN nanobelt under different loading forces in light and dark conditions: (a) 30 nN; (b) 40 nN.
图 6 (a)单根GaN纳米带器件等效电路示意图; (b)光力电耦合能带结构示意图
Figure 6. (a) Schematic diagram of equivalent circuit of the single GaN nanobelt based device; (b) schematic diagram of energy band structure with optically modulated electromechanical coupling.
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[1] Johnson J C, Choi H J, Knutsen K P, Schaller R D, Yang P D, Saykally R J 2002 Nature Mater. 1 106
Google Scholar
[2] Kang M S, Lee C H, Park J B, Yoo H, Yi G C 2012 Nano Energy 1 391
Google Scholar
[3] Kim H M, Cho Y H, Lee H, Kim S I, Ryu S R, Kim D Y, Kang T W, Chung K S 2004 Nano Lett. 4 1059
Google Scholar
[4] Sun S X, Wei Z C, Xia P H, Wang W B, Duan Z Y, Li Y X, Zhong Y H, Ding P, Jin Z 2018 Chin. Phys. B 27 28502
Google Scholar
[5] Zhao S L, Wang Z Z, Chen Z D, Wang M J, Dai Y, Ma X H, Zhang J C, Hao Y 2019 Chin. Phys. B 28 27301
Google Scholar
[6] Hou M C, Xie G, Sheng K 2019 Chin. Phys. B 28 37302
Google Scholar
[7] Gon M J, Wang Q, Yan J D, Liu F Q, Feng C, Wang X L, Wang Z G 2016 Chin. Phys. Lett. 33 117303
Google Scholar
[8] 周幸叶, 吕元杰, 谭鑫, 王元刚, 宋旭波, 何泽召, 张志荣, 刘庆彬, 韩婷婷, 房玉龙, 冯志红 2018 物理学报 67 178501
Google Scholar
Zhou X Y, Lv Y J, Tan X, Wang Y G, Song X B, He Z Z, Zhang Z R, Liu Q B, Han T T, Fang Y L, Feng Z H 2018 Acta Phys. Sin. 67 178501
Google Scholar
[9] Holmes M J, Choi K, Kako S, Arita M, Arakawa, Y 2014 Nano Lett. 14 982
Google Scholar
[10] Fu K, Fu H Q, Huang X Q, Yang T H, Chen H, Baranowski I, Montes J, Yang C, Zhou J G, Zhao Y J 2019 IEEE Electron Device Lett. 40 375
Google Scholar
[11] Tchoe Y, Jo J, Kim M, Heo J, Yoo G, Sone C, Yi G C 2014 Adv. Mater. 26 3019
Google Scholar
[12] Tyagi P, Ramesh C, Sharma A, Husale S, Kushvaha S S, Senthil Kumar M 2019 Mater. Sci. Semicond. Process. 97 80
Google Scholar
[13] Hu W G, Kalantar-Zadeh K, Gupta K, Liu C P 2018 MRS Bull. 43 936
Google Scholar
[14] Goswami L, Pandey R, Gupta G 2018 Appl. Surf. Sci. 449 186
Google Scholar
[15] Aggarwal N, Krishna S, Jain S K, Arora A, Goswami L, Sharma A, Husale S, Gundimeda A, Gupta G 2019 J. Alloys Compd. 785 883
Google Scholar
[16] Huang J Y, Zheng H, Mao S X, Li Q, Wang G T 2011 Nano Lett. 11 1618
Google Scholar
[17] Yu R M, Dong L, Pan C F, Niu S M, Liu H F, Liu W, Chua S, Chi D Z, Wang Z L 2012 Adv. Mater. 24 3532
Google Scholar
[18] Yu R M, Wu W Z, Ding Y, Wang Z L 2013 ACS Nano 7 6403
Google Scholar
[19] Peng M Z, Liu Y D, Yu A F, Zhang Y, Liu C H, Liu J Y, Wu W, Zhang K, Shi X Q, Kou J Z, Zhai J Y, Wang Z L 2016 ACS Nano 10 1572
Google Scholar
[20] Wang X F, Yu R M, Peng W B, Wu W Z, Li S T, Wang Z L 2015 Adv. Mater. 27 8067
Google Scholar
[21] Du C H, Jiang C Y, Zuo P, Huang X, Pu X, Zhao Z F, Zhou Y L, Li L X, Chen H, Hu W G, Wang Z L 2015 Small 11 6071
Google Scholar
[22] Liu H T, Hua Q L, Yu R M, Yang Y C, Zhang T P, Zhang Y J, Pan C F 2016 Adv. Funct. Mater. 26 5307
Google Scholar
[23] Lin F, Chen S W, Meng J, Tse G, Fu X W, Xu F J, Shen B, Liao Z M, Yu D P 2014 Appl. Phys. Lett. 105 073103
Google Scholar
[24] Zhao Z F, Pu X, Han C B, Du C H, Li L X, Jiang C Y, Hu W G, Wang Z L 2015 ACS Nano 9 8578
Google Scholar
[25] Wang S J, Cheng G, Cheng K, Jiang X H, Du Z L 2011 Nanoscale Res. Lett. 6 541
Google Scholar
[26] Yang Y, Qi J J, Gu Y S, Guo W, Zhang Y 2010 Appl. Phys. Lett. 96 123103
Google Scholar
[27] Zhang S, Gao L, Song A S, Zheng X H, Yao Q Z, Ma T B, Di Z F, Feng X Q, Li Q Y 2018 Nano Lett. 18 6030
Google Scholar
[28] Wu D X, Cheng H B, Zheng X J, Wang X Y, Wang D, Li J 2015 Chin. Phys. Lett. 32 108102
Google Scholar
[29] Yan X Y, Peng J F, Yan S A, Zheng X J 2018 J. Electron. Mater. 47 3869
Google Scholar
[30] Sun X, Liu W B, Jiang D S, Liu Z S, Zhang S, Wang L L, Wang H, Zhu J J, Duan L H, Wang Y T, Zhao D G, Zhang S M, Yang H 2008 J. Phys. D: Appl. Phys. 41 165108
Google Scholar
[31] Yang G, Li Y F, Yao B, Ding Z H, Deng R, Fang X, Wei Z P 2015 ACS Appl. Mater. Interfaces 7 16653
Google Scholar
[32] Ryu S R, Ram S D G, Lee S J, Cho H D, Lee S, Kang T W, Kwon S, Yang W, Shin S, Woo Y 2015 Appl. Surf. Sci. 347 793
Google Scholar
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