Prediction of proton single event upset sensitivity based on heavy ion test data in nanometer hardened static random access memory

Luo Yin-Hong; Zhang Feng-Qi; Guo Hong-Xia; Wojtek Hajdas

doi:10.7498/aps.69.20190878

Abstract

In order to evaluate the radiation tolerance to proton single event effect(SEE) in nanometer dual interlocked cell (DICE) hardening device accurately, single event upset (SEU) linear energy transfer (LET) threshold at heavy ion normal and tilt incidence, and the worst case SEU orientational angle are acquired based on the analysis of heavy ion SEU testing data in 65 nm dual DICE static random access memory (SRAM). It is proved that dual DICE design is effective for improving the LET threshold against SEU. Howerer, heavy ion tilt incidence at the worst orientational angle will significantly reduce the SEU threshold and increase the SEU cross section. The worst orientational angle for SEU in DICE SRAM is the large tilting angle along the well. The maximum LET value and the emission angle distribution of secondary particle induced by the nuclear reaction between protons with different energy and layers with different multiple metallization are obtained by using Monte-Carlo simulation. The maximum LET value of secondary particle from proton-copper spallation reaction is higher than 15 MeV·cm²/mg for 100 MeV and 200 MeV protons. Secondary particles with the maximum energy and longest range are emitted preferentially in the forward direction. Proton SEU sensitivity is further predicted through combining heavy ion test data with Monte-Carlo simulation. Proton SEU test data verify the effectiveness of the prediction method and the accuracy of the prediction results. The research results indicate that the tolerance of nanometer DICE hardening technique against proton SEU will be overestimated if SEE evaluation test is carried out with only 100 MeV proton accelerator or normal incidence. Proton single event upset in nanometer dual DICE SRAM has an evident dependence on tilt angle and orientational angle. By adopting the above prediction method, whether proton SEE test needs performing or not in nanometer radiation-hardening device can be judged and screened. The requirements for the maximum energy of proton accelerator can be ascertained. In order to ensure that the devices are applied to space with high reliability, SEE test should be carried out including tilt incidence at the worst orientational angle in nanometer DICE hardening device in the process of heavy ion and proton SEE test evaluation.

Keywords:

double dual interlocked cell hardening /
single event upset /
proton /
the worst orientational angle

Authors and contacts

1.
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
2.
Paul Scherrer Institute, Villigen PSI 5232, Switzerland

Corresponding author: Luo Yin-Hong, luoyinhong@nint.ac.cn

Funds: Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 11690043, 11690040)

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References

[1]	Hoeffgen S K, Durante M, Ferlet-Cavrois V, Harboe-Sørensen R, Lennartz W, Kuendgen T, Kuhnhenn J, Latessa C, Mathes M, Menicucci A, Metzger S, Nieminen P, Pleskac R, Poivey C, Schardt D, Weinand U 2012 IEEE Trans. Nucl. Sci. 59 1161 Google Scholar
[2]	Falguere D, Boscher D, Nuns T, Duzellier S, Bourdarie S, Ecoffet R, Barde S, Cueto J, Alonzo C, Hoffman C 2002 IEEE Trans. Nucl. Sci. 49 2782 Google Scholar
[3]	Peterson E L 1992 IEEE Trans. Nucl. Sci. 39 1600 Google Scholar
[4]	Calvel P, Barillot C, Lamothe P, Ecoffet R, Duzellier S, Falguere D 1996 IEEE Trans. Nucl. Sci. 43 2827 Google Scholar
[5]	Edmonds L D 2000 IEEE Trans. Nucl. Sci. 47 1713 Google Scholar
[6]	Barak J 2006 .IEEE Trans. Nucl. Sci. 53 3336 Google Scholar
[7]	Koga R, George J, Swift G, Yui C, Edmonds L, Carmichael C, Langley T, Murray P, Lanes K, Napier M 2004 IEEE Trans. Nucl. Sci. 51 2825 Google Scholar
[8]	Hansen D L 2015 IEEE Trans. Nucl. Sci. 62 2874 Google Scholar
[9]	Sierawski B D, Pellish J A, Reed R A, Schrimpf R D, Warren K M, Weller R A, Mendenhall M H, Black J D, Tipton A D, Xapsos M A, Baumann R C, Deng X, Campola M J, Friendlich M R, Kim H S, Phan A M, Seidleck C M 2009 IEEE Trans. Nucl. Sci. 56 3085 Google Scholar
[10]	Warren K M, Weller R A, Sierawski B D, Reed R A, Mendenhall M H, Schrimph R D, Massengill L W, Porter M E, Wilkinson J D, Label K A, Adams J H 2007 IEEE Trans. Nucl. Sci. 54 898 Google Scholar
[11]	Xi K, Geng C, Zhang Z G, Hou M D, Sun Y M, Luo J, Liu T Q, Wang B, Ye B, Yin Y N, Liu J 2016 Chin. Phys. C 40 066001 Google Scholar
[12]	Warren K M, Sierawski B D, Reed R A, Weller R A, Carmichael C, Lesea A, Mendenhal M H, Dodd P E, Schrimpf R D, Massengill L W, Hoang T, Wan H, De Jong J L, Padovani R, Fabula J J 2007 IEEE Trans. Nucl. Sci. 54 2419 Google Scholar
[13]	Gorbunov M S, Boruzdina A B, Dolotov P S 2016 IEEE Trans. Nucl. Sci. 63 2250 Google Scholar
[14]	Loveless T D, Jagannathan S, Reece T, Chetia J, Bhuva B L, McCurdy M W, Massengill L W, Wen S J, Wong R, Rennie D 2011 IEEE Trans. Nucl. Sci. 58 1008 Google Scholar
[15]	Amusan O A, Massengill L W, Baze M. P., Bhuva B L, Witulski A F, DasGupta S, Sternberg A L, Fleming P R, Heath C C, Alles M L 2007 IEEE Trans. Nucl. Sci. 52 2584
[16]	Gorbunov M S, Dolotov P S, Antonov A A, Zebrev G.I, Emeliyanov V V, Boruzdina A B, Petrov A G, Ulanova A V 2014 IEEE Trans. Nucl. Sci. 61 1575 Google Scholar
[17]	Liu L, Yue S G, Lu S J 2015 J. Semicond. 36 115007 Google Scholar
[18]	Cabanas-Holmen M, Cannon E H, Rabaa S, Amort T, Ballast J, Carson M, Lam D, Brees R 2013 IEEE Trans. Nucl. Sci. 60 4374 Google Scholar
[19]	European Space Agency 2014 ESCC Basic Specification NO. 25100
[20]	Turflinger T L, Clymer D A, Mason L W, Stone S, George J S, Koga R, Beach E, Huntington K, Turflinger T L 2017 IEEE Trans. Nucl. Sci. 64 309 Google Scholar
[21]	Schwank J R, Shaneyfelt M R, Baggio J, Dodd P E, Felix J A, Ferlet-Cavrois V, Paillet P, Lambert D, Sexton F W, Hash G L, Blackmore E 2006 IEEE Trans. Nucl. Sci. 52 2622
[22]	罗尹虹, 张凤祁, 王燕萍, 王圆明, 郭晓强, 郭红霞 2016 物理学报 65 068501 Google Scholar Luo Y H, Zhang F Q, Wang Y P, Wang Y M, Guo X Q, Guo H X 2016 Acta Phys. Sin. 65 068501 Google Scholar

Cited By

图 1 DICE存储单元电路原理图

Figure 1. Diagram of the DICE memory cell.

DownLoad: Full-Size Img PowerPoint

图 2 双DICE存储单元交叉布局版图示意图以及存储数据1时DICE单元4组灵敏节点对分布情况

Figure 2. Layout diagram of dual DICE cells and the distribution of four sensitive pairs with “1”.

DownLoad: Full-Size Img PowerPoint

图 3 重离子沿不同方位角倾斜60°入射器件示意图

Figure 3. Schematic of heavy ion tilt 60° incidence along different orientational angle.

DownLoad: Full-Size Img PowerPoint

图 4 65 nm SRAM重离子单粒子位翻转截面曲线

Figure 4. 65 nm dual DICE SRAM heavy ion bit SEU cross section versus the effective LET.

DownLoad: Full-Size Img PowerPoint

图 5 65 nm DICE SRAM有源区上方多层金属布线层

Figure 5. Multiple metal-interconnection layers above the active area in 65 nm SRAM.

DownLoad: Full-Size Img PowerPoint

图 6 100 MeV和200 MeV质子穿过器件多层金属布线层后在硅中产生的次级粒子LET值分布　(a) 铝互联; (b) 铜互联

Figure 6. LET distribution of secondary particle in silicon with 100 MeV and 200 MeV protons passing through multiple metallization layers: (a) Al interconnection; (b) cu interconnection.

DownLoad: Full-Size Img PowerPoint

图 7 65 nm双DICE SRAM质子单粒子翻转截面

Figure 7. Proton single event upset cross section in 65 nm dual DICE SRAM.

DownLoad: Full-Size Img PowerPoint

图 8 100 MeV质子穿过多层金属布线层产生的Z = 27次级粒子能量角度分布

Figure 8. The distribution of energy and angle of secondary particle with Z = 13 induced by interaction with multiple metallization layers by 100 MeV protons.

DownLoad: Full-Size Img PowerPoint

表 1 双DICE存储单元存储不同数据时的灵敏节点对

Table 1. Sensitive pairs with different data stored in dual DICE cell.

存储数据	灵敏节点对	存储数据	灵敏节点对
BL = 1, (A, B, C, D) = (1, 0, 1, 0)	N1/N3	BL = 0, (A, B, C, D) = (0, 1, 0, 1)	N2/N4
	P2/P4		P1/P3
	N1/P2		N2/P3
	N3/P4		N4/P1

DownLoad: CSV

表 2 试验离子种类信息

Table 2. Ion species in Heavy ion testing.

序号	离子种类	能量/MeV	射程/μm	垂直入射时有效LET/(MeV·cm²/mg)	倾角30°、60°时对应的有效LET/(MeV·cm²/mg)
1	¹⁹F⁹⁺	110	82.7	4.4	5.1/9.3
2	³⁵Cl^{11, 14+}	160	46.0	14.0	16.5/30.7
3	⁴⁸Ti^{10, 15+}	169	34.7	23.5
4	⁷⁴Ge^{11, 20+}	210	30.5	37.4
5	⁷⁹Br^{13, 21+}	220	30.4	40.5	45.8/63.3
6	¹²⁷I^{15, 25+}	265	28.8	52.7	57.7/68.0
7	²⁰⁹Bi³¹⁺	923	53.7	99.8

DownLoad: CSV

[1]	Hoeffgen S K, Durante M, Ferlet-Cavrois V, Harboe-Sørensen R, Lennartz W, Kuendgen T, Kuhnhenn J, Latessa C, Mathes M, Menicucci A, Metzger S, Nieminen P, Pleskac R, Poivey C, Schardt D, Weinand U 2012 IEEE Trans. Nucl. Sci. 59 1161 Google Scholar
[2]	Falguere D, Boscher D, Nuns T, Duzellier S, Bourdarie S, Ecoffet R, Barde S, Cueto J, Alonzo C, Hoffman C 2002 IEEE Trans. Nucl. Sci. 49 2782 Google Scholar
[3]	Peterson E L 1992 IEEE Trans. Nucl. Sci. 39 1600 Google Scholar
[4]	Calvel P, Barillot C, Lamothe P, Ecoffet R, Duzellier S, Falguere D 1996 IEEE Trans. Nucl. Sci. 43 2827 Google Scholar
[5]	Edmonds L D 2000 IEEE Trans. Nucl. Sci. 47 1713 Google Scholar
[6]	Barak J 2006 .IEEE Trans. Nucl. Sci. 53 3336 Google Scholar
[7]	Koga R, George J, Swift G, Yui C, Edmonds L, Carmichael C, Langley T, Murray P, Lanes K, Napier M 2004 IEEE Trans. Nucl. Sci. 51 2825 Google Scholar
[8]	Hansen D L 2015 IEEE Trans. Nucl. Sci. 62 2874 Google Scholar
[9]	Sierawski B D, Pellish J A, Reed R A, Schrimpf R D, Warren K M, Weller R A, Mendenhall M H, Black J D, Tipton A D, Xapsos M A, Baumann R C, Deng X, Campola M J, Friendlich M R, Kim H S, Phan A M, Seidleck C M 2009 IEEE Trans. Nucl. Sci. 56 3085 Google Scholar
[10]	Warren K M, Weller R A, Sierawski B D, Reed R A, Mendenhall M H, Schrimph R D, Massengill L W, Porter M E, Wilkinson J D, Label K A, Adams J H 2007 IEEE Trans. Nucl. Sci. 54 898 Google Scholar
[11]	Xi K, Geng C, Zhang Z G, Hou M D, Sun Y M, Luo J, Liu T Q, Wang B, Ye B, Yin Y N, Liu J 2016 Chin. Phys. C 40 066001 Google Scholar
[12]	Warren K M, Sierawski B D, Reed R A, Weller R A, Carmichael C, Lesea A, Mendenhal M H, Dodd P E, Schrimpf R D, Massengill L W, Hoang T, Wan H, De Jong J L, Padovani R, Fabula J J 2007 IEEE Trans. Nucl. Sci. 54 2419 Google Scholar
[13]	Gorbunov M S, Boruzdina A B, Dolotov P S 2016 IEEE Trans. Nucl. Sci. 63 2250 Google Scholar
[14]	Loveless T D, Jagannathan S, Reece T, Chetia J, Bhuva B L, McCurdy M W, Massengill L W, Wen S J, Wong R, Rennie D 2011 IEEE Trans. Nucl. Sci. 58 1008 Google Scholar
[15]	Amusan O A, Massengill L W, Baze M. P., Bhuva B L, Witulski A F, DasGupta S, Sternberg A L, Fleming P R, Heath C C, Alles M L 2007 IEEE Trans. Nucl. Sci. 52 2584
[16]	Gorbunov M S, Dolotov P S, Antonov A A, Zebrev G.I, Emeliyanov V V, Boruzdina A B, Petrov A G, Ulanova A V 2014 IEEE Trans. Nucl. Sci. 61 1575 Google Scholar
[17]	Liu L, Yue S G, Lu S J 2015 J. Semicond. 36 115007 Google Scholar
[18]	Cabanas-Holmen M, Cannon E H, Rabaa S, Amort T, Ballast J, Carson M, Lam D, Brees R 2013 IEEE Trans. Nucl. Sci. 60 4374 Google Scholar
[19]	European Space Agency 2014 ESCC Basic Specification NO. 25100
[20]	Turflinger T L, Clymer D A, Mason L W, Stone S, George J S, Koga R, Beach E, Huntington K, Turflinger T L 2017 IEEE Trans. Nucl. Sci. 64 309 Google Scholar
[21]	Schwank J R, Shaneyfelt M R, Baggio J, Dodd P E, Felix J A, Ferlet-Cavrois V, Paillet P, Lambert D, Sexton F W, Hash G L, Blackmore E 2006 IEEE Trans. Nucl. Sci. 52 2622
[22]	罗尹虹, 张凤祁, 王燕萍, 王圆明, 郭晓强, 郭红霞 2016 物理学报 65 068501 Google Scholar Luo Y H, Zhang F Q, Wang Y P, Wang Y M, Guo X Q, Guo H X 2016 Acta Phys. Sin. 65 068501 Google Scholar

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