Carbon ions were implanted into crystal Si to a concentration of(06—15)at% at room temperature. Some samples were pre-irradiated with 29Si+ ions, while others were not pre-irradiated. Then the two kinds of samples were implanted with 29C+ ions simultaneously, and Si1-xCx alloys were grown by solid phase epitaxy with high-temperature annealing. The effects of pre-irradiation on the formation of Si1-xCx alloys were studied. If the dose of implanted C ion was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implantation, and then it was difficult for Si1-xCx alloys to form after annealing at 950℃. Pre-irradiation was advantageous for Si1-xCx alloy formation. With the increase of C ion dose, the damage produced by C ions increased. Pre-irradiation was unfavorable for Si1-xCx alloy formation. If the implanted C concentration was higher than that for solid phase epitaxy solution, only part of the implanted C atoms form Si1-xCx alloys and the effects of pre-irradiation could be neglected. As the annealing temperature was increased to 1050℃, Si1-xCx alloys in both pre-irradiated and unpreirradiated samples of low C concentration remained, whereas most part of Si1-xCx alloys in samples with high C concentration vanished.
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