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Yuan Guo-Liang, Wang Chen-Hao, Tang Wen-Bin, Zhang Rui, Lu Xu-Bing. Structure, performance regulation and typical device applications of HfO2-based ferroelectric films. Acta Physica Sinica,
2023, 72(9): 097703.
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Shi Zhi-Xin, Zhou Da-Yu, Li Shuai-Dong, Xu Jin, Uwe Schröder. First-order reversal curve diagram and its application in investigation of polarization switching behavior of HfO2-based ferroelectric thin films. Acta Physica Sinica,
2021, 70(12): 127702.
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Dai Guang-Zhen, Jiang Yong-Zhao, Ni Tian-Ming, Liu Xin, Lu Lin, Liu Qi. First principles study of effect of vaiable component Al on HfO2 resistance. Acta Physica Sinica,
2019, 68(11): 113101.
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Li Chao, Yao Yuan, Yang Yang, Shen Xi, Gao Bin, Huo Zong-Liang, Kang Jin-Feng, Liu Ming, Yu Ri-Cheng. In situ transmission electron microscopy studies on nanomaterials and HfO2-based storage nanodevices. Acta Physica Sinica,
2018, 67(12): 126802.
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Li Hai-Tao, Jiang Ya-Xiao, Tu Li-Min, Li Shao-Hua, Pan Ling, Li Wen-Biao, Yang Shi-E, Chen Yong-Sheng. Influence of annealing temperature on properties of Cu2O thin films deposited by electron beam evaporation. Acta Physica Sinica,
2018, 67(5): 053301.
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Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng. High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductor. Acta Physica Sinica,
2015, 64(16): 168501.
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Jiang Xian-Wei, Lu Shi-Bin, Dai Guang-Zhen, Wang Jia-Yu, Jin Bo, Chen Jun-Ning. Research of data retention for charge trapping memory by first-principles. Acta Physica Sinica,
2015, 64(21): 213102.
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Jiang Ran, Du Xiang-Hao, Han Zu-Yin, Sun Wei-Deng. Cluster distribution for oxygen vacancy in Ti/HfO2/Pt resistive switching memory device. Acta Physica Sinica,
2015, 64(20): 207302.
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Zhou Da-Yu, Xu Jin. Ferroelectric and antiferroelectric properties of Si-doped HfO2 thin films. Acta Physica Sinica,
2014, 63(11): 117703.
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Wang Jia-Yu, Dai Yue-Hua, Zhao Yuan-Yang, Xu Jian-Bin, Yang Fei, Dai Guang-Zhen, Yang Jin. Research on charge trapping memory’s over erase. Acta Physica Sinica,
2014, 63(20): 203101.
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Dai Guang-Zhen, Dai Yue-Hua, Xu Tai-Long, Wang Jia-Yu, Zhao Yuan-Yang, Chen Jun-Ning, Liu Qi. First principles study on influence of oxygen vacancy in HfO2 on charge trapping memory. Acta Physica Sinica,
2014, 63(12): 123101.
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Xu Xiang-Dong, Liu Ying, Qiu Ke-Qiang, Liu Zheng-Kun, Hong Yi-Lin, Fu Shao-Jun. Ion beam etching for multilayer dielectric pulse compressor gratings with top layers of HfO2. Acta Physica Sinica,
2013, 62(23): 234202.
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Liu Hua-Song, Ji Yi-Qin, Jiang Yu-Gang, Wang Li-Shuan, Leng Jian, Sun Peng, Zhuang Ke-Wen. Study on internal short-range order microstructure characteristic of SiO2 thin film. Acta Physica Sinica,
2013, 62(18): 187801.
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Luo Yin-Yan, Zhu Xian-Fang. Effects of thermal evaporation and electron beam evaporation on two-dimensional patterned Ag nanostructure during nanosphere lithography. Acta Physica Sinica,
2011, 60(8): 086104.
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Cen Min, Zhang Yue-Guang, Chen Wei-Lan, Gu Pei-Fu. Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 films. Acta Physica Sinica,
2009, 58(10): 7025-7029.
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Xu Jun, Huang Yu-Jian, Ding Shi-Jin, Zhang Wei. Influence of Ta and TaN bottom electrodes on electrical performances of MIM capacitors with atomic-layer-deposited HfO2 dielectric. Acta Physica Sinica,
2009, 58(5): 3433-3436.
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Liu Liang, Ma Xiao-Bai, Nie Rui-Juan, Yao Dan, Wang Fu-Ren. Properties of MgB2 films fabricated under different conditions by ex-situ annealing of Mg/B multilayer precursor. Acta Physica Sinica,
2009, 58(11): 7966-7971.
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Huang Li-Qing, Pan Hua-Qiang, Wang Jun, Tong Hui-Min, Zhu Ke, Ren Guan-Xu, Wang Yong-Chang. Spontaneous formation of ordered Sn nanodot array on porous anodic alumina membrane. Acta Physica Sinica,
2007, 56(11): 6712-6716.
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Lu Hong-Liang, Xu Min, Chen Wei, Ren Jie, Ding Shi-Jin, Zhang Wei. Geometries and the electronic structures of t-HfO2 (001) surface. Acta Physica Sinica,
2006, 55(3): 1374-1378.
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Hou Hai-Hong, Sun Xi-Lian, Shen Yan-Ming, Shao Jian-Da, Fan Zheng-Xiu, Yi Kui. Roughness and light scattering properties of ZrO2 thin films deposited by electron beam evaporation. Acta Physica Sinica,
2006, 55(6): 3124-3127.
doi: 10.7498/aps.55.3124
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