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CN 11-1958/O4
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Other articles related with "61.80.Ed":
168501 Wang Shuo, Chang Yong-Wei, Chen Jing, Wang Ben-Yan, He Wei-Wei, Ge Hao
  Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell
    Acta Physica Sinica   2019 Vol.68 (16): 168501-168501 [Abstract] (66) [HTML 1 KB] [PDF 1072 KB] (28)
166101 Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An
  Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons
    Acta Physica Sinica   2018 Vol.67 (16): 166101-166101 [Abstract] (226) [HTML 1 KB] [PDF 414 KB] (159)
146103 Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan
  Radiation effect and degradation mechanism in 65 nm CMOS transistor
    Acta Physica Sinica   2018 Vol.67 (14): 146103-146103 [Abstract] (226) [HTML 1 KB] [PDF 607 KB] (92)
96101 Li Xiao-Long, Lu Wu, Wang Xin, Guo Qi, He Cheng-Fa, Sun Jing, Yu Xin, Liu Mo-Han, Jia Jin-Cheng, Yao Shuai, Wei Xin-Yu
  Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods
    Acta Physica Sinica   2018 Vol.67 (9): 96101-096101 [Abstract] (224) [HTML 1 KB] [PDF 532 KB] (216)
116301 Sheng Yu-Bang, Yang Lü-Yun, Luan Huai-Xun, Liu Zi-Jun, Li Jin-Yan, Dai Neng-Li
  Gamma radiation effects on absorption and emission properties of erbium-doped silicate glasses
    Acta Physica Sinica   2012 Vol.61 (11): 116301-116301 [Abstract] (1762) [HTML 1 KB] [PDF 417 KB] (736)
106103 Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo
  Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory
    Acta Physica Sinica   2012 Vol.61 (10): 106103-106103 [Abstract] (1770) [HTML 1 KB] [PDF 859 KB] (584)
76101 Xi Shan-Bin,Lu Wu,Wang Zhi-Kuan,Ren Di-Yuan,Zhou Dong,Wen Lin,Sun Jing
  Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors
    Acta Physica Sinica   2012 Vol.61 (7): 76101-076101 [Abstract] (1884) [HTML 1 KB] [PDF 1062 KB] (659)
64201 Ma Jing,Che Chi,Yu Si-Yuan,Tan Li-Ying,Zhou Yan-Ping,Wang Jian
  γ-radiation damage of fiber Bragg grating and its effects on reflected spectrum characteristics
    Acta Physica Sinica   2012 Vol.61 (6): 64201-064201 [Abstract] (1995) [HTML 1 KB] [PDF 417 KB] (727)
26102 Cui Jiang-Wei, Yu Xue-Feng, Ren Di-Yuan, Lu Jian
  The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET
    Acta Physica Sinica   2012 Vol.61 (2): 26102-026102 [Abstract] (1562) [HTML 1 KB] [PDF 628 KB] (758)
116103 Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang
  Total ionizing dose effect of 0.18 μm nMOSFETs
    Acta Physica Sinica   2011 Vol.60 (11): 116103-116103 [Abstract] (4153) [HTML 0 KB] [PDF 1394 KB] (832)
96104 Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo
  Degradation and dose rate effects of bipolar linearregulator on ionizing radiation
    Acta Physica Sinica   2011 Vol.60 (9): 96104-096104 [Abstract] (3822) [HTML 1 KB] [PDF 1713 KB] (877)
68702 Gao Bo, Yu Xue-Feng, Ren Di-Yuan, Cui Jiang-Wei, Lan Bo, Li Ming, Wang Yi-Yuan
  Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor
    Acta Physica Sinica   2011 Vol.60 (6): 68702-068702 [Abstract] (4066) [HTML 0 KB] [PDF 1316 KB] (926)
56105 He Bao-Ping, Ding Li-Li, Yao Zhi-Bin, Xiao Zhi-Gang, Huang Shao-Yan, Wang Zu-Jun
  Three-dimensional simulation of total dose effects on ultra-deep submicron devices
    Acta Physica Sinica   2011 Vol.60 (5): 56105-056105 [Abstract] (3570) [HTML 0 KB] [PDF 1489 KB] (799)
36106 Gao Bo, Yu Xue-Feng, Ren Di-Yuan, Li Yu-Dong, Cui Jiang-Wei, Li Mao-Shun, Li Ming, Wang Yi-Yuan
  Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array
    Acta Physica Sinica   2011 Vol.60 (3): 36106-036106 [Abstract] (3534) [HTML 0 KB] [PDF 1169 KB] (714)
5572 Zheng Yu-Zhan, Lu Wu, Ren Di-Yuan, Wang Yi-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa
  Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas
    Acta Physica Sinica   2009 Vol.58 (8): 5572-5577 [Abstract] (2211) [HTML 0 KB] [PDF 261 KB] (1052)
2737 Zhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men, Zhang Yu-Ming
  Gamma-ray radiation effect on Ni/4H-SiC SBD
    Acta Physica Sinica   2009 Vol.58 (4): 2737-2741 [Abstract] (3387) [HTML 0 KB] [PDF 235 KB] (1469)
16102 Liu Hong-Xia, Wang Zhi, Zhuo Qing-Qing, Wang Qian-Qiong
  Influence of channel length on PD SOI PMOS devices under total dose irradiation
    Acta Physica Sinica   2014 Vol.63 (1): 16102-016102 [Abstract] (439) [HTML 1 KB] [PDF 406 KB] (410)
16106 Fan Xue, Li Wei, Li Ping, Zhang Bin, Xie Xiao-Dong, Wang Gang, Hu Bin, Zhai Ya-Hong
  Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layouts
    Acta Physica Sinica   2012 Vol.61 (1): 16106-016106 [Abstract] (1540) [HTML 1 KB] [PDF 1003 KB] (774)
26101 Ma Wu-Ying, Lu Wu, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin, Cong Zhong-Chao, Wang Bo, Maria
  Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator
    Acta Physica Sinica   2014 Vol.63 (2): 26101-026101 [Abstract] (538) [HTML 1 KB] [PDF 320 KB] (832)
36105 Zhuo Qing-Qing, Liu Hong-Xia, Peng Li, Yang Zhao-Nian, Cai Hui-Min
  Mechanism of three kink effects in irradiated partially-depleted SOINMOSFET's
    Acta Physica Sinica   2013 Vol.62 (3): 36105-036105 [Abstract] (896) [HTML 1 KB] [PDF 982 KB] (498)
56102 Wang Bo, Li Yu-Dong, Guo Qi, Liu Chang-Ju, Wen Lin, Ma Li-Ya, Sun Jing, Wang Hai-Jiao, Cong Zhong-Chao, Ma Wu-Ying
  Research on dark signal degradation in 60Co γ-ray-irradiated CMOS active pixel sensor
    Acta Physica Sinica   2014 Vol.63 (5): 56102-056102 [Abstract] (622) [HTML 1 KB] [PDF 391 KB] (497)
76101 Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming
  Influence of γ-ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor
    Acta Physica Sinica   2017 Vol.66 (7): 76101-076101 [Abstract] (347) [HTML 1 KB] [PDF 583 KB] (182)
76102 Zheng Qi-Wen, Cui Jiang-Wei, Wang Han-Ning, Zhou Hang, Yu De-Zhao, Wei Ying, Su Dan-Dan
  Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process
    Acta Physica Sinica   2016 Vol.65 (7): 76102-076102 [Abstract] (473) [HTML 1 KB] [PDF 407 KB] (172)
76104 Ning Bing-Xu, Hu Zhi-Yuan, Zhang Zheng-Xuan, Bi Da-Wei, Huang Hui-Xiang, Dai Ruo-Fan, Zhang Yan-Wei, Zou Shi-Chang
  Effects of total ionizing dose on narrow-channel SOI NMOSFETs
    Acta Physica Sinica   2013 Vol.62 (7): 76104-076104 [Abstract] (1003) [HTML 1 KB] [PDF 856 KB] (833)
78501 Liu Yuan, Chen Hai-Bo, He Yu-Juan, Wang Xin, Yue Long, En Yun-Fei, Liu Mo-Han
  Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors
    Acta Physica Sinica   2015 Vol.64 (7): 78501-078501 [Abstract] (492) [HTML 1 KB] [PDF 508 KB] (289)
86101 Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng
  Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment
    Acta Physica Sinica   2015 Vol.64 (8): 86101-086101 [Abstract] (421) [HTML 1 KB] [PDF 466 KB] (237)
86101 Cong Zhong-Chao, Yu Xue-Feng, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Sun Jing, Wang Bo, Ma Wu-Ying, Ma Li-Ya, Zhou Hang
  Online and offline test method of total dose radiation damage on static random access memory
    Acta Physica Sinica   2014 Vol.63 (8): 86101-086101 [Abstract] (411) [HTML 1 KB] [PDF 3162 KB] (440)
96104 Zhou Hang, Zheng Qi-Wen, Cui Jiang-Wei, Yu Xue-Feng, Guo Qi, Ren Di-Yuan, Yu De-Zhao, Su Dan-Dan
  Enhanced channel hot carrier effect of 0.13 μm silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect
    Acta Physica Sinica   2016 Vol.65 (9): 96104-096104 [Abstract] (525) [HTML 1 KB] [PDF 620 KB] (133)
116101 Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke
  The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistors
    Acta Physica Sinica   2014 Vol.63 (11): 116101-116101 [Abstract] (453) [HTML 1 KB] [PDF 315 KB] (458)
116101 Zheng Qi-Wen, Yu Xue-Feng, Cui Jiang-Wei, Guo Qi, Ren Di-Yuan, Cong Zhong-Chao
  Research on SRAM functional failure mode induced by total ionizing dose irradiation
    Acta Physica Sinica   2013 Vol.62 (11): 116101-116101 [Abstract] (720) [HTML 1 KB] [PDF 9785 KB] (1363)
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