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CN 11-1958/O4
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Other articles related with "73.40.Kp":
247202 Ren Jian, Su Li-Na, Li Wen-Jia
  Capacitance scattering mechanism in lattice-matched In0.17Al0.83N/GaN heterojunction Schottky diodes
    Acta Physica Sinica   2018 Vol.67 (24): 247202-247202 [Abstract] (156) [HTML 1 KB] [PDF 597 KB] (66)
198501 Tang Wen-Xin, Hao Rong-Hui, Chen Fu, Yu Guo-Hao, Zhang Bao-Shun
  p-GaN hybrid anode AlGaN/GaN diode with 1000 V operation
    Acta Physica Sinica   2018 Vol.67 (19): 198501-198501 [Abstract] (294) [HTML 1 KB] [PDF 383 KB] (119)
177202 Wang Xiang, Chen Lei-Lei, Cao Yan-Rong, Yang Qun-Si, Zhu Pei-Min, Yang Guo-Feng, Wang Fu-Xue, Yan Da-Wei, Gu Xiao-Feng
  Physical model of conductive dislocations in GaN Schottky diodes
    Acta Physica Sinica   2018 Vol.67 (17): 177202-177202 [Abstract] (234) [HTML 1 KB] [PDF 800 KB] (109)
128101 Liu Jie, Wang Lu, Sun Ling, Wang Wen-Qi, Wu Hai-Yan, Jiang Yang, Ma Zi-Guang, Wang Wen-Xin, Jia Hai-Qiang, Chen Hong
  Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector
    Acta Physica Sinica   2018 Vol.67 (12): 128101-128101 [Abstract] (250) [HTML 1 KB] [PDF 2308 KB] (143)
76801 Zhang Zhi-Rong, Fang Yu-Long, Yin Jia-Yun, Guo Yan-Min, Wang Bo, Wang Yuan-Gang, Li Jia, Lu Wei-Li, Gao Nan, Liu Pei, Feng Zhi-Hong
  Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
    Acta Physica Sinica   2018 Vol.67 (7): 76801-076801 [Abstract] (392) [HTML 1 KB] [PDF 4651 KB] (248)
247203 Zhu Yan-Xu, Song Hui-Hui, Wang Yue-Hua, Li Lai-Long, Shi Dong
  Design and fabrication of high electron mobility transistor devices with gallium nitride-based
    Acta Physica Sinica   2017 Vol.66 (24): 247203-247203 [Abstract] (260) [HTML 1 KB] [PDF 626 KB] (178)
247302 Zhang Li, Lin Zhi-Yu, Luo Jun, Wang Shu-Long, Zhang Jin-Cheng, Hao Yue, Dai Yang, Chen Da-Zheng, Guo Li-Xin
  High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications
    Acta Physica Sinica   2017 Vol.66 (24): 247302-247302 [Abstract] (279) [HTML 1 KB] [PDF 571 KB] (263)
197301 Li Shu-Ping, Zhang Zhi-Li, Fu Kai, Yu Guo-Hao, Cai Yong, Zhang Bao-Shun
  High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics
    Acta Physica Sinica   2017 Vol.66 (19): 197301-197301 [Abstract] (260) [HTML 1 KB] [PDF 709 KB] (145)
167301 Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang
  Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer
    Acta Physica Sinica   2017 Vol.66 (16): 167301-167301 [Abstract] (320) [HTML 1 KB] [PDF 442 KB] (320)
47301 Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue
  A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor
    Acta Physica Sinica   2012 Vol.61 (4): 47301-047301 [Abstract] (1942) [HTML 1 KB] [PDF 2081 KB] (863)
57202 Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue
  Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors
    Acta Physica Sinica   2012 Vol.61 (5): 57202-057202 [Abstract] (1693) [HTML 1 KB] [PDF 1251 KB] (900)
117304 Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue
  Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials
    Acta Physica Sinica   2011 Vol.60 (11): 117304-117304 [Abstract] (5397) [HTML 0 KB] [PDF 1236 KB] (930)
117305 Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue
  High electron mobility lattice-matched InAlN/GaN materials
    Acta Physica Sinica   2011 Vol.60 (11): 117305-117305 [Abstract] (4314) [HTML 0 KB] [PDF 1742 KB] (831)
97101 Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu
  Investigation on trap by the gate fringecapacitance in GaN HEMT
    Acta Physica Sinica   2011 Vol.60 (9): 97101-097101 [Abstract] (3784) [HTML 1 KB] [PDF 1679 KB] (765)
87807 Lu Wei, Xu Ming, Wei Yi, He Lin
  Investigation on the band structures of AlN/InN and AlN/GaN superlattices
    Acta Physica Sinica   2011 Vol.60 (8): 87807-087807 [Abstract] (1911) [HTML 0 KB] [PDF 1562 KB] (1185)
68701 Guo Bao-Zeng, Zhang Suo-Liang, Liu Xin
  Electron transport property in wurtzite GaN at high electric field with Monte Carlo simulation
    Acta Physica Sinica   2011 Vol.60 (6): 68701-068701 [Abstract] (3442) [HTML 0 KB] [PDF 1699 KB] (691)
47101 Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke
  The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors
    Acta Physica Sinica   2011 Vol.60 (4): 47101-047101 [Abstract] (3721) [HTML 0 KB] [PDF 1131 KB] (847)
8021 Wang Lai, Wang Lei, Ren Fan, Zhao Wei, Wang Jia-Xing, Hu Jian-Nan, Zhang Chen, Hao Zhi-Biao, Luo Yi
  GaN grown on AlN/sapphire templates
    Acta Physica Sinica   2010 Vol.59 (11): 8021-8025 [Abstract] (4440) [HTML 0 KB] [PDF 1352 KB] (1252)
6521 He Zhi-Gang, Cheng Xing-Hua, Gong Min, Cai Juan-Lu, Shi Rui-Ying
  The factors influencing spin-polarized transport in magnetic pn junction
    Acta Physica Sinica   2010 Vol.59 (9): 6521-6526 [Abstract] (3900) [HTML 0 KB] [PDF 825 KB] (924)
5724 Ding Guo-Jian, Guo Li-Wei, Xing Zhi-Gang, Chen Yao, Xu Pei-Qiang, Jia Hai-Qiang, Zhou Jun-Ming, Chen Hong
  Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers
    Acta Physica Sinica   2010 Vol.59 (8): 5724-5729 [Abstract] (4172) [HTML 0 KB] [PDF 778 KB] (1131)
4524 Guo Jian-Chuan, Zuo Yu-Hua, Zhang Yun, Zhang Ling-Zi, Cheng Bu-Wen, Wang Qi-Ming
  Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode
    Acta Physica Sinica   2010 Vol.59 (7): 4524-4529 [Abstract] (3081) [HTML 0 KB] [PDF 743 KB] (845)
566 Yang Yin-Tang, Geng Zhen-Hai, Duan Bao-Xing, Jia Hu-Jun, Yu Cen, Ren Li-Li
  Characteristics of a SiC SBD with semi-superjunction structure
    Acta Physica Sinica   2010 Vol.59 (1): 566-570 [Abstract] (3915) [HTML 0 KB] [PDF 229 KB] (1530)
7921 Cai Hong-Kun, Tao Ke, Wang Lin-Shen, Zhao Jing-Fang, Sui Yan-Ping, Zhang De-Xian
  Interface treatment of amorphous silicon thin film solar cells on flexible substrate
    Acta Physica Sinica   2009 Vol.58 (11): 7921-7925 [Abstract] (3775) [HTML 0 KB] [PDF 266 KB] (1568)
7952 Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui
  Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector
    Acta Physica Sinica   2009 Vol.58 (11): 7952-7957 [Abstract] (3392) [HTML 0 KB] [PDF 245 KB] (1101)
4925 Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng
  Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs
    Acta Physica Sinica   2009 Vol.58 (7): 4925-4930 [Abstract] (3425) [HTML 0 KB] [PDF 293 KB] (1441)
3409 Zhang Jin-Cheng, Zheng Peng-Tian, Dong Zuo-Dian, Duan Huan-Tao, Ni Jin-Yu, Zhang Jin-Feng, Hao Yue
  The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure
    Acta Physica Sinica   2009 Vol.58 (5): 3409-3415 [Abstract] (3820) [HTML 0 KB] [PDF 293 KB] (2009)
1959 Zhang Jin-Cheng, Dong Zuo-Dian, Qin Xue-Xue, Zheng Peng-Tian, Liu Lin-Jie, Hao Yue
  Analysis of the leakage current in GaN-based heterostructure buffer layer
    Acta Physica Sinica   2009 Vol.58 (3): 1959-1965 [Abstract] (3551) [HTML 0 KB] [PDF 252 KB] (1632)
959 Lin Han, Liu Shou, Zhang Xiang-Su, Liu Bao-Lin, Ren Xue-Chang
  Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique
    Acta Physica Sinica   2009 Vol.58 (2): 959-963 [Abstract] (4285) [HTML 0 KB] [PDF 249 KB] (2253)
1886 Feng Qian, Hao Yue, Yue Yuan-Zheng
  Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film
    Acta Physica Sinica   2008 Vol.57 (3): 1886-1890 [Abstract] (3203) [HTML 0 KB] [PDF 255 KB] (931)
57302 Duan Bao-Xing, Yang Yin-Tang
  Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers
    Acta Physica Sinica   2014 Vol.63 (5): 57302-057302 [Abstract] (596) [HTML 1 KB] [PDF 526 KB] (505)
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