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CN 11-1958/O4
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Other articles related with "73.61.Ey":
207302 Zhang Heng, Huang Yan, Shi Wang-Zhou, Zhou Xiao-Hao, Chen Xiao-Shuang
  First-principles study on the diffusion dynamics of Al atoms on Si surface
    Acta Physica Sinica   2019 Vol.68 (20): 207302-207302 [Abstract] (73) [HTML 1 KB] [PDF 1118 KB] (45)
167803 Zhang Ning, Xu Kai-Kai, Chen Yan-Xu, Zhu Kun-Feng, Zhao Jian-Ming, Yu Qi
  Application prospect of metal-oxide-semiconductor silicon light emitting devices in integrated circuits
    Acta Physica Sinica   2019 Vol.68 (16): 167803-167803 [Abstract] (180) [HTML 1 KB] [PDF 1073 KB] (83)
117301 Wang Hai-Ling, Wang Ting, Zhang Jian-Jun
  Controllable growth of InAs quantum dots on patterned GaAs (001) substrate
    Acta Physica Sinica   2019 Vol.68 (11): 117301-117301 [Abstract] (158) [HTML 1 KB] [PDF 1587 KB] (64)
17301 Chen Qian, Li Qun, Yang Ying
  Effects of AlGaN interlayer on scattering mechanisms in InAlN/AlGaN/GaN heterostructures
    Acta Physica Sinica   2019 Vol.68 (1): 17301-017301 [Abstract] (203) [HTML 1 KB] [PDF 438 KB] (107)
178501 Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong
  Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement
    Acta Physica Sinica   2018 Vol.67 (17): 178501-178501 [Abstract] (282) [HTML 1 KB] [PDF 783 KB] (114)
137101 Li Xiao-Ying, Huang Can, Zhu Yan, Li Jin-Bin, Fan Ji-Yu, Pan Yan-Fei, Shi Da-Ning, Ma Chun-Lan
  Dzyaloshinsky-Moriya interaction in δ-(Zn, Cr)S(111) surface: First principle calculations
    Acta Physica Sinica   2018 Vol.67 (13): 137101-137101 [Abstract] (355) [HTML 1 KB] [PDF 2161 KB] (227)
117102 Huang Can, Li Xiao-Ying, Zhu Yan, Pan Yan-Fei, Fan Ji-Yu, Shi Da-Ning, Ma Chun-Lan
  First principle study of weak Dzyaloshinsky-Moriya interaction in Co/BN surface
    Acta Physica Sinica   2018 Vol.67 (11): 117102-117102 [Abstract] (264) [HTML 1 KB] [PDF 1912 KB] (469)
87501 Xu Da-Qing, Zhao Zi-Han, Li Pei-Xian, Wang Chao, Zhang Yan, Liu Shu-Lin, Tong Jun
  First-principle study on electronic structures, magnetic, and optical properties of different valence Mn ions doped InN
    Acta Physica Sinica   2018 Vol.67 (8): 87501-087501 [Abstract] (348) [HTML 1 KB] [PDF 1339 KB] (344)
27303 Li Qun, Chen Qian, Chong Jing
  Variational study of the 2DEG wave function in InAlN/GaN heterostructures
    Acta Physica Sinica   2018 Vol.67 (2): 27303-027303 [Abstract] (259) [HTML 1 KB] [PDF 549 KB] (120)
197302 Zhang Yong, Shi Yi-Min, Bao You-Zhen, Yu Xia, Xie Zhong-Xiang, Ning Feng
  Effect of surface passivation on the electronic properties of GaAs nanowire:A first-principle study
    Acta Physica Sinica   2017 Vol.66 (19): 197302-197302 [Abstract] (326) [HTML 1 KB] [PDF 2809 KB] (171)
167301 Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang
  Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer
    Acta Physica Sinica   2017 Vol.66 (16): 167301-167301 [Abstract] (334) [HTML 1 KB] [PDF 442 KB] (345)
187901 Cai Zhi-Peng, Yang Wen-Zheng, Tang Wei-Dong, Hou Xun
  Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes
    Acta Physica Sinica   2012 Vol.61 (18): 187901-187901 [Abstract] (1272) [HTML 1 KB] [PDF 639 KB] (329)
168402 Zhou Mei, Zhao De-Gang
  Influence of structure parameters on the performance of p-i-n InGaN solar cell
    Acta Physica Sinica   2012 Vol.61 (16): 168402-168402 [Abstract] (1721) [HTML 1 KB] [PDF 374 KB] (952)
137303 Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing
  The effect of ITO annealing on electrical characteristic of GaN based LED
    Acta Physica Sinica   2012 Vol.61 (13): 137303-137303 [Abstract] (2273) [HTML 1 KB] [PDF 2608 KB] (957)
106102 Wang Yan-Wen, Wu Hua-Rui
  Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot
    Acta Physica Sinica   2012 Vol.61 (10): 106102-106102 [Abstract] (1996) [HTML 1 KB] [PDF 224 KB] (637)
47301 Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue
  A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor
    Acta Physica Sinica   2012 Vol.61 (4): 47301-047301 [Abstract] (1959) [HTML 1 KB] [PDF 2081 KB] (882)
36203 Cheng Sai, Lü Hui-Min, Cui Jing-Ya
  Preparation of AlN/C composite foam through annealing recrystallization and its mechanical performance study
    Acta Physica Sinica   2012 Vol.61 (3): 36203-036203 [Abstract] (1758) [HTML 1 KB] [PDF 2336 KB] (484)
127901 Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan
  Photoemission mechanism of GaN vacuum surface electron source
    Acta Physica Sinica   2011 Vol.60 (12): 127901-127901 [Abstract] (1870) [HTML 0 KB] [PDF 1138 KB] (748)
107901 Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan
  Comprehensive Survey for the Frontier Disciplines
    Acta Physica Sinica   2011 Vol.60 (10): 107901-107901 [Abstract] (3759) [HTML 0 KB] [PDF 1159 KB] (741)
77301 Zhang Hong, Zhang Chun-Yuan, Zhang Hui-Liang, Liu Jian
  Charged excitons in parabolic quantum-well wires under magnetic filed
    Acta Physica Sinica   2011 Vol.60 (7): 77301-077301 [Abstract] (3320) [HTML 0 KB] [PDF 1487 KB] (924)
78503 Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi
  Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates
    Acta Physica Sinica   2011 Vol.60 (7): 78503-078503 [Abstract] (3684) [HTML 0 KB] [PDF 1336 KB] (642)
67301 Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang
  Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes
    Acta Physica Sinica   2011 Vol.60 (6): 67301-067301 [Abstract] (3236) [HTML 0 KB] [PDF 1368 KB] (721)
38203 Zeng Le-Gui, Liu Fa-Min, Zhong Wen-Wu, Ding Peng, Cai Lu-Gang, Zhou Chuan-Cang
  Preparationand structure and optical-electrical properties of the Nb/SnO2 composite thin film
    Acta Physica Sinica   2011 Vol.60 (3): 38203-038203 [Abstract] (4004) [HTML 0 KB] [PDF 1575 KB] (809)
17903 Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Du Xiao-Qing, Wang Xiao-Hui, Guo Xiang-Yang
  Quantum efficiency recovery of reflection-mode NEA GaN photocathode
    Acta Physica Sinica   2011 Vol.60 (1): 17903-017903 [Abstract] (3605) [HTML 0 KB] [PDF 981 KB] (777)
8820 Li Jin, Gui Gui, Sun Li-Zhong, Zhong Jian-Xin
  Structure transition of two-dimensional hexagonal BN under large uniaxial strain
    Acta Physica Sinica   2010 Vol.59 (12): 8820-8828 [Abstract] (3860) [HTML 0 KB] [PDF 1062 KB] (910)
8021 Wang Lai, Wang Lei, Ren Fan, Zhao Wei, Wang Jia-Xing, Hu Jian-Nan, Zhang Chen, Hao Zhi-Biao, Luo Yi
  GaN grown on AlN/sapphire templates
    Acta Physica Sinica   2010 Vol.59 (11): 8021-8025 [Abstract] (4485) [HTML 0 KB] [PDF 1352 KB] (1262)
4221 Zhou Yuan-Ming, Yu Guo-Lin, Gao Kuang-Hong, Lin Tie, Guo Shao-Ling, Chu Jun-Hao, Dai Ning
  Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure
    Acta Physica Sinica   2010 Vol.59 (6): 4221-4225 [Abstract] (3582) [HTML 0 KB] [PDF 534 KB] (755)
5705 Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue
  The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor deposition
    Acta Physica Sinica   2009 Vol.58 (8): 5705-5708 [Abstract] (2412) [HTML 0 KB] [PDF 193 KB] (1203)
5847 Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin
  Activation mechanism of negative electron affinity GaN photocathode
    Acta Physica Sinica   2009 Vol.58 (8): 5847-5851 [Abstract] (2223) [HTML 0 KB] [PDF 185 KB] (1161)
4925 Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng
  Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs
    Acta Physica Sinica   2009 Vol.58 (7): 4925-4930 [Abstract] (3479) [HTML 0 KB] [PDF 293 KB] (1452)
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