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CN 11-1958/O4
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Other articles related with "85.30.De":
158501 Ma Qun-Gang, Wang Hai-Hong, Zhang Sheng-Dong, Chen Xu, Wang Ting-Ting
  Electro-static discharge protection analysis and design optimization of interlayer Cu interconnection in InGaZnO thin film transistor backplane
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158502 Cao Ya-Qing, Huang Huo-Lin, Sun Zhong-Hao, Li Fei-Yu, Bai Hong-Liang, Zhang Hui, Sun Nan, Yung C. Liang
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    Acta Physica Sinica   2019 Vol.68 (15): 158502-158502 [Abstract] (122) [HTML 1 KB] [PDF 1199 KB] (47)
124202 Chen Qian, Ma Ying-Qi, Chen Rui, Zhu Xiang, Li Yue, Han Jian-Wei
  Characteristics of latch-up current of dose rate effect by laser simulation
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108501 Ma Qun-Gang, Zhou Liu-Fei, Yu Yue, Ma Guo-Yong, Zhang Sheng-Dong
  Electro-static discharge failure analysis and design optimization of gate-driver on array circuit in InGaZnO thin film transistor backplane
    Acta Physica Sinica   2019 Vol.68 (10): 108501-108501 [Abstract] (86) [HTML 1 KB] [PDF 1050 KB] (60)
237803 Ju An-An, Guo Hong-Xia, Zhang Feng-Qi, Guo Wei-Xin, Ouyang Xiao-Ping, Wei Jia-Nan, Luo Yin-Hong, Zhong Xiang-Li, Li Bo, Qin Li
  Experimental study about single event functional interrupt of ferroelectric random access memory induced by 30-90 MeV proton
    Acta Physica Sinica   2018 Vol.67 (23): 237803-237803 [Abstract] (183) [HTML 1 KB] [PDF 1214 KB] (136)
198501 Tang Wen-Xin, Hao Rong-Hui, Chen Fu, Yu Guo-Hao, Zhang Bao-Shun
  p-GaN hybrid anode AlGaN/GaN diode with 1000 V operation
    Acta Physica Sinica   2018 Vol.67 (19): 198501-198501 [Abstract] (304) [HTML 1 KB] [PDF 383 KB] (122)
198502 Yang Wen, Song Jian-Jun, Ren Yuan, Zhang He-Ming
  Band structure model of modified Ge for optical device application
    Acta Physica Sinica   2018 Vol.67 (19): 198502-198502 [Abstract] (135) [HTML 1 KB] [PDF 2589 KB] (72)
178501 Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong
  Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement
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68101 Zhang Jin-Feng, Yang Peng-Zhi, Ren Ze-Yang, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Xu Lei, Hao Yue
  Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor
    Acta Physica Sinica   2018 Vol.67 (6): 68101-068101 [Abstract] (215) [HTML 1 KB] [PDF 804 KB] (149)
68501 Chen Hang-Yu, Song Jian-Jun, Zhang Jie, Hu Hui-Yong, Zhang He-Ming
  New experimental discovery of channel crystal plane and orientation selection for small-sized uniaxial strained Si PMOS
    Acta Physica Sinica   2018 Vol.67 (6): 68501-068501 [Abstract] (270) [HTML 1 KB] [PDF 723 KB] (126)
47302 Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen
  Floating gate effect in amorphous InGaZnO thin-film transistor
    Acta Physica Sinica   2018 Vol.67 (4): 47302-047302 [Abstract] (314) [HTML 1 KB] [PDF 717 KB] (384)
247302 Zhang Li, Lin Zhi-Yu, Luo Jun, Wang Shu-Long, Zhang Jin-Cheng, Hao Yue, Dai Yang, Chen Da-Zheng, Guo Li-Xin
  High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications
    Acta Physica Sinica   2017 Vol.66 (24): 247302-247302 [Abstract] (282) [HTML 1 KB] [PDF 571 KB] (285)
208101 Ren Ze-Yang, Zhang Jin-Feng, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Quan Ru-Dai, Hao Yue
  Characteristics of H-terminated single crystalline diamond field effect transistors
    Acta Physica Sinica   2017 Vol.66 (20): 208101-208101 [Abstract] (333) [HTML 1 KB] [PDF 535 KB] (275)
198502 Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun
  Fabrication and characteristics of high performance SOI-based Ge PIN waveguide photodetector
    Acta Physica Sinica   2017 Vol.66 (19): 198502-198502 [Abstract] (281) [HTML 1 KB] [PDF 1429 KB] (228)
166101 Li Li, Liu Hong-Xia, Yang Zhao-Nian
  Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor
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134209 Feng Chen, Feng Guo-Ying, Chen Nian-Jiang, Zhou Shou-Huan
  Ultrahigh-Q small-V photonic crystal nanobeam cavities based on parabolic-shaped width and taper holes
    Acta Physica Sinica   2012 Vol.61 (13): 134209-134209 [Abstract] (1867) [HTML 1 KB] [PDF 909 KB] (687)
134401 Zhao Xin, Zhang Wan-Rong, Jin Dong-Yue, Fu Qiang, Chen Liang, Xie Hong-Yun, Zhang Yu-Jie
  Effects of Ge profile in base region on thermal characteristics of SiGe HBTs
    Acta Physica Sinica   2012 Vol.61 (13): 134401-134401 [Abstract] (1645) [HTML 1 KB] [PDF 3904 KB] (437)
100201 Xie Zi-Jian, Hu Zuo-Qi, Wang Yu-Hui, Zhao Xu
  Numerical simulation of RESET operation for multilevel storage in phase change memory cell
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88501 Tang Xiao-Yan,Dai Xiao-Wei,Zhang Yu-Ming,Zhang Yi-Men
  Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diode
    Acta Physica Sinica   2012 Vol.61 (8): 88501-088501 [Abstract] (1684) [HTML 1 KB] [PDF 2333 KB] (661)
78504 Li Cong,Zhuang Yi-Qi,Han Ru,Zhang Li,Bao Jun-Lin
  Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain
    Acta Physica Sinica   2012 Vol.61 (7): 78504-078504 [Abstract] (1931) [HTML 1 KB] [PDF 1286 KB] (732)
28501 Chen Hai-Feng, Guo Li-Xin
  Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET's
    Acta Physica Sinica   2012 Vol.61 (2): 28501-028501 [Abstract] (1405) [HTML 1 KB] [PDF 527 KB] (545)
118501 Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong
  Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI
    Acta Physica Sinica   2011 Vol.60 (11): 118501-118501 [Abstract] (3705) [HTML 0 KB] [PDF 1258 KB] (558)
98501 Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, Wang Xiao-Yan, Hu Hui-Yong
  Study of physically modeling for small-scaled strained Si nMOSFET
    Acta Physica Sinica   2011 Vol.60 (9): 98501-098501 [Abstract] (3552) [HTML 0 KB] [PDF 1395 KB] (708)
78501 Chen Liang, Zhang Wan-Rong, Jin Dong-Yue, Xie Hong-Yun, Xiao Ying, Wang Ren-Qing, Ding Chun-Bao
  Improvement on thermal stability of power heterojunction bipolar transistor using non-uniform finger spacing
    Acta Physica Sinica   2011 Vol.60 (7): 78501-078501 [Abstract] (3291) [HTML 0 KB] [PDF 1844 KB] (683)
78502 Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Xu Li-Jun, Ma Jian-Li
  A collector space charge region model for SiGe HBT on thin-film SOI
    Acta Physica Sinica   2011 Vol.60 (7): 78502-078502 [Abstract] (3693) [HTML 0 KB] [PDF 1382 KB] (748)
58501 Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu
  A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET
    Acta Physica Sinica   2011 Vol.60 (5): 58501-058501 [Abstract] (3683) [HTML 0 KB] [PDF 1194 KB] (774)
58502 Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong
  Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate
    Acta Physica Sinica   2011 Vol.60 (5): 58502-058502 [Abstract] (3198) [HTML 0 KB] [PDF 1263 KB] (651)
44402 Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun
  Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor
    Acta Physica Sinica   2011 Vol.60 (4): 44402-044402 [Abstract] (3506) [HTML 0 KB] [PDF 1267 KB] (755)
46106 Liu Fan-Yu, Liu Heng-Zhu, Liu Bi-Wei, Liang Bin, Chen Jian-Jun
  Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technology
    Acta Physica Sinica   2011 Vol.60 (4): 46106-046106 [Abstract] (4027) [HTML 0 KB] [PDF 1456 KB] (910)
47303 Gao Yong, Ma Li, Zhang Ru-Liang, Wang Dong-Fang
  Effects of p and n pillar widths on electrical characteristicsof super junction SiGe power diodes
    Acta Physica Sinica   2011 Vol.60 (4): 47303-047303 [Abstract] (3620) [HTML 0 KB] [PDF 1318 KB] (646)
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