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CN 11-1958/O4
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Other articles related with "85.30.Pq":
68501 Zhao Jin-Yu, Yang Jian-Qun, Dong Lei, Li Xing-Ji
  Hydrogen soaking irradiation acceleration method: application to and damage mechanism analysis on 3DG111 transistors
    Acta Physica Sinica   2019 Vol.68 (6): 68501-068501 [Abstract] (97) [HTML 1 KB] [PDF 827 KB] (44)
198502 Yang Wen, Song Jian-Jun, Ren Yuan, Zhang He-Ming
  Band structure model of modified Ge for optical device application
    Acta Physica Sinica   2018 Vol.67 (19): 198502-198502 [Abstract] (137) [HTML 1 KB] [PDF 2589 KB] (73)
168501 Yang Jian-Qun, Dong Lei, Liu Chao-Ming, Li Xing-Ji, Xu Peng-Fei
  Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors
    Acta Physica Sinica   2018 Vol.67 (16): 168501-168501 [Abstract] (179) [HTML 1 KB] [PDF 487 KB] (76)
96101 Li Xiao-Long, Lu Wu, Wang Xin, Guo Qi, He Cheng-Fa, Sun Jing, Yu Xin, Liu Mo-Han, Jia Jin-Cheng, Yao Shuai, Wei Xin-Yu
  Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods
    Acta Physica Sinica   2018 Vol.67 (9): 96101-096101 [Abstract] (221) [HTML 1 KB] [PDF 532 KB] (209)
68501 Chen Hang-Yu, Song Jian-Jun, Zhang Jie, Hu Hui-Yong, Zhang He-Ming
  New experimental discovery of channel crystal plane and orientation selection for small-sized uniaxial strained Si PMOS
    Acta Physica Sinica   2018 Vol.67 (6): 68501-068501 [Abstract] (282) [HTML 1 KB] [PDF 723 KB] (132)
224703 Guo Chun-Sheng, Ding Yan, Jiang Bo-Yang, Liao Zhi-Heng, Su Ya, Feng Shi-Wei
  High-efficiency on-line measurement of junction temperature based on bipolar transistors in accelerated experiment
    Acta Physica Sinica   2017 Vol.66 (22): 224703-224703 [Abstract] (212) [HTML 1 KB] [PDF 375 KB] (191)
78501 Ma Zhen-Yang,Chai Chang-Chun,Ren Xing-Rong,Yang Yin-Tang,Chen Bin
  The damage effect and mechanism of the bipolar transistor caused by microwaves
    Acta Physica Sinica   2012 Vol.61 (7): 78501-078501 [Abstract] (1784) [HTML 1 KB] [PDF 1524 KB] (883)
128501 Guo Chun-Sheng, Wan Ning, Ma Wei-Dong, Xiong Cong, Zhang Guang-Chen, Feng Shi-Wei
  Online degradation model based on process-stress accelerated test
    Acta Physica Sinica   2011 Vol.60 (12): 128501-128501 [Abstract] (1693) [HTML 0 KB] [PDF 1055 KB] (679)
118501 Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong
  Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI
    Acta Physica Sinica   2011 Vol.60 (11): 118501-118501 [Abstract] (3753) [HTML 0 KB] [PDF 1258 KB] (561)
108401 Du Ming-Xing, Wei Ke-Xin
  A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region
    Acta Physica Sinica   2011 Vol.60 (10): 108401-108401 [Abstract] (4229) [HTML 0 KB] [PDF 1239 KB] (813)
88501 Zhai Ya-Hong, Li Ping, Zhang Guo-Jun, Luo Yu-Xiang, Fan Xue, Hu Bin, Li Jun-Hong, Zhang Jian, Su Ping
  Radiation-resistant bipolar n-p-n transistor
    Acta Physica Sinica   2011 Vol.60 (8): 88501-088501 [Abstract] (1486) [HTML 0 KB] [PDF 2949 KB] (1095)
78502 Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Xu Li-Jun, Ma Jian-Li
  A collector space charge region model for SiGe HBT on thin-film SOI
    Acta Physica Sinica   2011 Vol.60 (7): 78502-078502 [Abstract] (3729) [HTML 0 KB] [PDF 1382 KB] (757)
28501 Zhao Hong-Fei, Du Lei, He Liang, Bao Jun-Lin
  Base resistance in Si unijunction transistor irradiated by 60Co γ-radiation
    Acta Physica Sinica   2011 Vol.60 (2): 28501-028501 [Abstract] (3967) [HTML 0 KB] [PDF 829 KB] (788)
8118 Chai Chang-Chun, Xi Xiao-Wen, Ren Xing-Rong, Yang Yin-Tang, Ma Zhen-Yang
  The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulse
    Acta Physica Sinica   2010 Vol.59 (11): 8118-8124 [Abstract] (3520) [HTML 0 KB] [PDF 3960 KB] (1405)
18501 Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming
  Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor
    Acta Physica Sinica   2016 Vol.65 (1): 18501-018501 [Abstract] (402) [HTML 1 KB] [PDF 3390 KB] (223)
38501 Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin
  Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex
    Acta Physica Sinica   2015 Vol.64 (3): 38501-038501 [Abstract] (430) [HTML 1 KB] [PDF 367 KB] (328)
48501 Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei
  3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor
    Acta Physica Sinica   2013 Vol.62 (4): 48501-048501 [Abstract] (969) [HTML 1 KB] [PDF 6659 KB] (695)
48501 Liu Jing, Guo Fei, Gao Yong
  Mechanism and characteristic analysis and optimization of SiGeC heterojunction bipolar transistor with super junction
    Acta Physica Sinica   2014 Vol.63 (4): 48501-048501 [Abstract] (503) [HTML 1 KB] [PDF 496 KB] (420)
58501 Jin Zhao, Qiao Li-Ping, Guo Chen, Wang Jiang-An, Richard C. Liu
  Electronic conductivity effective masses along arbitrary directional channel in uniaxial strained Si(001)
    Acta Physica Sinica   2013 Vol.62 (5): 58501-058501 [Abstract] (1250) [HTML 1 KB] [PDF 4395 KB] (2150)
68501 Ren Xing-Rong, Chai Chang-Chun, Ma Zhen-Yang, Yang Yin-Tang, Qiao Li-Ping, Shi Chun-Lei
  The damage effect and mechanism of bipolar transistors induced by injection of electromagnetic pulse from the base
    Acta Physica Sinica   2013 Vol.62 (6): 68501-068501 [Abstract] (775) [HTML 1 KB] [PDF 3638 KB] (1111)
98503 Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu
  The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors
    Acta Physica Sinica   2013 Vol.62 (9): 98503-098503 [Abstract] (861) [HTML 1 KB] [PDF 478 KB] (480)
118501 Song Jian-Jun, Yang Chao, Zhu He, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Shu Bin
  Structure design and frequency characteristics of SOI SiGe HBT
    Acta Physica Sinica   2014 Vol.63 (11): 118501-118501 [Abstract] (463) [HTML 1 KB] [PDF 2071 KB] (507)
118502 Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin
  Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor
    Acta Physica Sinica   2015 Vol.64 (11): 118502-118502 [Abstract] (426) [HTML 1 KB] [PDF 743 KB] (168)
128501 Ma Zhen-Yang, Chai Chang-Chun, Ren Xing-Rong, Yang Yin-Tang, Qiao Li-Ping, Shi Chun-Lei
  The damage effect and mechanism of the bipolar transistor induced by different types of high power microwaves
    Acta Physica Sinica   2013 Vol.62 (12): 128501-128501 [Abstract] (613) [HTML 1 KB] [PDF 1362 KB] (514)
148503 Liu Jing, Wu Yu, Gao Yong
  Research on SiGe heterojunction bipolar transistor with a trench-type emitter
    Acta Physica Sinica   2014 Vol.63 (14): 148503-148503 [Abstract] (362) [HTML 1 KB] [PDF 3908 KB] (793)
158501 Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing
  Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive load
    Acta Physica Sinica   2016 Vol.65 (15): 158501-158501 [Abstract] (325) [HTML 1 KB] [PDF 406 KB] (236)
178501 Zhou Shou-Li, Li Jia, Ren Hong-Liang, Wen Hao, Peng Yin-Sheng
  The impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor
    Acta Physica Sinica   2013 Vol.62 (17): 178501-178501 [Abstract] (603) [HTML 1 KB] [PDF 404 KB] (454)
196104 Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong
  Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates
    Acta Physica Sinica   2013 Vol.62 (19): 196104-196104 [Abstract] (507) [HTML 1 KB] [PDF 717 KB] (368)
238501 Liu Wei-Feng, Song Jian-Jun
  Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor
    Acta Physica Sinica   2014 Vol.63 (23): 238501-238501 [Abstract] (524) [HTML 1 KB] [PDF 1348 KB] (367)
238502 Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin
  Study on intrinsic carrier concentration of direct bandgap Ge1-xSnx
    Acta Physica Sinica   2014 Vol.63 (23): 238502-238502 [Abstract] (666) [HTML 1 KB] [PDF 739 KB] (550)
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