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CN 11-1958/O4
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Other articles related with "85.30.Tv":
97301 Song Hang, Liu Jie, Chen Chao, Ba Long
  Graphene-based field effect transistor with ion-gel film gate
    Acta Physica Sinica   2019 Vol.68 (9): 97301-097301 [Abstract] (183) [HTML 1 KB] [PDF 938 KB] (82)
48501 Gao Zhan-Zhan, Hou Peng-Fei, Guo Hong-Xia, Li Bo, Song Hong-Jia, Wang Jin-Bin, Zhong Xiang-Li
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    Acta Physica Sinica   2019 Vol.68 (4): 48501-048501 [Abstract] (109) [HTML 1 KB] [PDF 911 KB] (53)
198502 Yang Wen, Song Jian-Jun, Ren Yuan, Zhang He-Ming
  Band structure model of modified Ge for optical device application
    Acta Physica Sinica   2018 Vol.67 (19): 198502-198502 [Abstract] (137) [HTML 1 KB] [PDF 2589 KB] (73)
178501 Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong
  Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement
    Acta Physica Sinica   2018 Vol.67 (17): 178501-178501 [Abstract] (280) [HTML 1 KB] [PDF 783 KB] (114)
166101 Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An
  Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons
    Acta Physica Sinica   2018 Vol.67 (16): 166101-166101 [Abstract] (223) [HTML 1 KB] [PDF 414 KB] (141)
118502 Zheng Jia-Jin, Wang Ya-Ru, Yu Ke-Han, Xu Xiang-Xing, Sheng Xue-Xi, Hu Er-Tao, Wei Wei
  Field effect transistor photodetector based on graphene and perovskite quantum dots
    Acta Physica Sinica   2018 Vol.67 (11): 118502-118502 [Abstract] (495) [HTML 1 KB] [PDF 1325 KB] (513)
98502 Shao Yan, Ding Shi-Jin
  Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistors
    Acta Physica Sinica   2018 Vol.67 (9): 98502-098502 [Abstract] (327) [HTML 1 KB] [PDF 1402 KB] (358)
68501 Chen Hang-Yu, Song Jian-Jun, Zhang Jie, Hu Hui-Yong, Zhang He-Ming
  New experimental discovery of channel crystal plane and orientation selection for small-sized uniaxial strained Si PMOS
    Acta Physica Sinica   2018 Vol.67 (6): 68501-068501 [Abstract] (280) [HTML 1 KB] [PDF 723 KB] (127)
246102 Zhang Zhan-Gang, Lei Zhi-Feng, Yue Long, Liu Yuan, He Yu-Juan, Peng Chao, Shi Qian, Huang Yun, En Yun-Fei
  Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energetic ions
    Acta Physica Sinica   2017 Vol.66 (24): 246102-246102 [Abstract] (177) [HTML 1 KB] [PDF 1240 KB] (120)
247302 Zhang Li, Lin Zhi-Yu, Luo Jun, Wang Shu-Long, Zhang Jin-Cheng, Hao Yue, Dai Yang, Chen Da-Zheng, Guo Li-Xin
  High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications
    Acta Physica Sinica   2017 Vol.66 (24): 247302-247302 [Abstract] (287) [HTML 1 KB] [PDF 571 KB] (319)
237101 Liu Yuan, He Hong-Yu, Chen Rong-Sheng, Li Bin, En Yun-Fei, Chen Yi-Qiang
  Low-frequency noise in hydrogenated amorphous silicon thin film transistor
    Acta Physica Sinica   2017 Vol.66 (23): 237101-237101 [Abstract] (213) [HTML 1 KB] [PDF 489 KB] (203)
218102 Wu Pei, Hu Xiao, Zhang Jian, Sun Lian-Feng
  Research status and development graphene devices using silicon as the subtrate
    Acta Physica Sinica   2017 Vol.66 (21): 218102-218102 [Abstract] (535) [HTML 1 KB] [PDF 1264 KB] (1091)
218502 Lu Qi, Lyu Hong-Ming, Wu Xiao-Ming, Wu Hua-Qiang, Qian He
  Research progress of graphene radio frequency devices
    Acta Physica Sinica   2017 Vol.66 (21): 218502-218502 [Abstract] (373) [HTML 1 KB] [PDF 660 KB] (566)
218503 Li Wei-Sheng, Zhou Jian, Wang Han-Chen, Wang Shu-Xian, Yu Zhi-Hao, Li Song-Lin, Shi Yi, Wang Xin-Ran
  Logical integration device for two-dimensional semiconductor transition metal sulfide
    Acta Physica Sinica   2017 Vol.66 (21): 218503-218503 [Abstract] (994) [HTML 1 KB] [PDF 3056 KB] (1207)
168501 Guo Li-Qiang, Tao Jian, Wen Juan, Cheng Guang-Gui, Yuan Ning-Yi, Ding Jian-Ning
  Corn starch solid electrolyte gated proton/electron hybrid synaptic transistor
    Acta Physica Sinica   2017 Vol.66 (16): 168501-168501 [Abstract] (304) [HTML 1 KB] [PDF 662 KB] (258)
106103 Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo
  Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory
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107803 Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang
  A radiation degradation model of metal-oxide-semiconductor field effect transistor
    Acta Physica Sinica   2012 Vol.61 (10): 107803-107803 [Abstract] (1872) [HTML 1 KB] [PDF 264 KB] (596)
108501 You Hai-Long, Lan Jian-Chun, Fan Ju-Ping, Jia Xin-Zhang, Zha Wei
  Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave
    Acta Physica Sinica   2012 Vol.61 (10): 108501-108501 [Abstract] (1695) [HTML 1 KB] [PDF 527 KB] (622)
96102 Liu Bi-Wei,Chen Jian-Jun,Chen Shu-Ming,Chi Ya-Qin
  NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n+ deep well
    Acta Physica Sinica   2012 Vol.61 (9): 96102-096102 [Abstract] (2330) [HTML 1 KB] [PDF 650 KB] (778)
67801 Sun Peng,Du Lei,Chen Wen-Hao,He Liang
  A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise
    Acta Physica Sinica   2012 Vol.61 (6): 67801-067801 [Abstract] (1911) [HTML 1 KB] [PDF 361 KB] (634)
28501 Chen Hai-Feng, Guo Li-Xin
  Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET's
    Acta Physica Sinica   2012 Vol.61 (2): 28501-028501 [Abstract] (1407) [HTML 1 KB] [PDF 527 KB] (546)
116103 Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang
  Total ionizing dose effect of 0.18 μm nMOSFETs
    Acta Physica Sinica   2011 Vol.60 (11): 116103-116103 [Abstract] (4129) [HTML 0 KB] [PDF 1394 KB] (823)
108401 Du Ming-Xing, Wei Ke-Xin
  A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region
    Acta Physica Sinica   2011 Vol.60 (10): 108401-108401 [Abstract] (4219) [HTML 0 KB] [PDF 1239 KB] (808)
98501 Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, Wang Xiao-Yan, Hu Hui-Yong
  Study of physically modeling for small-scaled strained Si nMOSFET
    Acta Physica Sinica   2011 Vol.60 (9): 98501-098501 [Abstract] (3577) [HTML 0 KB] [PDF 1395 KB] (710)
86107 Chen Jian-Jun, Chen Shu-Ming, Liang Bin, Liu Bi-Wei, Chi Ya-Qing, Qin Jun-Rui, He Yi-Bai
  Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection
    Acta Physica Sinica   2011 Vol.60 (8): 86107-086107 [Abstract] (1335) [HTML 0 KB] [PDF 3695 KB] (657)
68702 Gao Bo, Yu Xue-Feng, Ren Di-Yuan, Cui Jiang-Wei, Lan Bo, Li Ming, Wang Yi-Yuan
  Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor
    Acta Physica Sinica   2011 Vol.60 (6): 68702-068702 [Abstract] (4029) [HTML 0 KB] [PDF 1316 KB] (920)
58501 Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu
  A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET
    Acta Physica Sinica   2011 Vol.60 (5): 58501-058501 [Abstract] (3711) [HTML 0 KB] [PDF 1194 KB] (778)
58502 Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong
  Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate
    Acta Physica Sinica   2011 Vol.60 (5): 58502-058502 [Abstract] (3221) [HTML 0 KB] [PDF 1263 KB] (661)
36106 Gao Bo, Yu Xue-Feng, Ren Di-Yuan, Li Yu-Dong, Cui Jiang-Wei, Li Mao-Shun, Li Ming, Wang Yi-Yuan
  Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array
    Acta Physica Sinica   2011 Vol.60 (3): 36106-036106 [Abstract] (3504) [HTML 0 KB] [PDF 1169 KB] (706)
18501 Bi Jin-Shun, Hai Chao-He, Han Zheng-Sheng
  Study on power characteristics of deep sub-micron SOI RF LDMOS
    Acta Physica Sinica   2011 Vol.60 (1): 18501-018501 [Abstract] (3976) [HTML 0 KB] [PDF 885 KB] (835)
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