Acta Physica Sinica
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2006, Vol. 55(2): 820-824    DOI: 10.7498/aps.55.820
Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s
Li Zhong-He, Liu Hong-Xia, Hao Yue
西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071
Received 2005-05-20  Revised 2005-07-04
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