Acta Physica Sinica
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2011, Vol. 60(1): 18501-018501    DOI: 10.7498/aps.60.018501
Study on power characteristics of deep sub-micron SOI RF LDMOS
Bi Jin-Shun, Hai Chao-He, Han Zheng-Sheng
Institute of Microelectronics of Chinese Science Academy, Beijing 100029, China
Received 2010-04-21  Revised 2010-05-19
Supporting info
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