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| 2011, Vol. 60(1): 18501-018501 DOI: 10.7498/aps.60.018501 | ||
| Study on power characteristics of deep sub-micron SOI RF LDMOS | ||
| Bi Jin-Shun, Hai Chao-He, Han Zheng-Sheng | ||
| Institute of Microelectronics of Chinese Science Academy, Beijing 100029, China | ||
| Received 2010-04-21 Revised 2010-05-19 | ||
| Supporting info | ||
| null | ||
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