Acta Physica Sinica
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2011, Vol. 60(7): 77205-077205    DOI: 10.7498/aps.60.077205
Electron mobility of strained Si/(001)Si1- x Ge x
Zhang He-Ming1, Song Jian-Jun1, Ma Jian-Li1, Wang Guan-Yu1, An Jiu-Hua1, Wang Xiao-Yan2
(1)Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; (2)Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Department of Electron and Electricity Engineering, Baoji University of Arts and Sciences, Baoji 721007, China
Received 2010-08-03  Revised 2010-10-16
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