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物理学报. 1981, 30(6): 794-801.
doi: 10.7498/aps.30.794.
双异质结双漂移区InP/InGaAsP/InP微波雪崩二极管的设想
- 收稿日期: 1980-09-24
- 刊出日期: 1981-03-05
摘要: 本文提出了一种双异质结双漂移区InP/InGaAsP/InP微波雪崩二极管的设想,分析表明:该器件的电压调制度可达100%,对应的直流到射频的转换率为64%,同时给出了器件的小信号理论分析。
English Abstract
A PROPOSAL OF DOUBLE HETEROJUNCTION DOUBLE DRIFT-REGION InP/InGaAsP/InP AVALANCHE DIODE
- Received Date:
24 September 1980
- Published Online:
05 March 1981
Abstract: In this article, a double heterojunction double drift-region InP/InGaAsP/InP avalanche diode is proposed. The analysis manifests: the voltage madulation depth is 100% corresponding to efficiency of 64%. The small signal theory analysis of the device impedance is also given.
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