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键合氢对GDa—Si:H薄膜光致发光性质的影响

马洪磊 周玉芳 李敦银

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键合氢对GDa—Si:H薄膜光致发光性质的影响

马洪磊, 周玉芳, 李敦银

EFFECTS OF BONDED HYDROGEN ON THE PHOTOLUMINESCENCE PROPERTIES OF GD a-Si:H THIN FILMS

MA HONG-LEI, ZHOU YU-FANG, LI DUN-YIN
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  • 测量了在不同衬底温度下制备的GDa-Si:H膜的光致发光谱和光吸收谱。实验发现键合氢含量的增加导致光致发光峰强度、发光峰能量、发光带半宽度、Stokes位移和热淬灭的增大。由此导出:(1)键合氢不仅能消除无辐射复合中心,而且能产生辐射复合中心;(2)随着键合氢含量的增加电子-声子相互作用增强,带尾宽度缓慢变窄。
    The photoluminescence spectra and optical absorption spectra were measured for GD a-Si :H films prepared at different substrate temperatures. It is found that increasing bonded hydrogen centent results in a systematic increase of the photoluminescence peak intensity, peak energy, linewidth, Stokes shift, and thermal quenching. From the experimental results we infer that: (1) The bonded hydrogen may generate radiative recombination centers as well as may remove non-radiative recombination centers; (2) The increase of the bonded hydrogen centent results in increase of the elec-tron-phonon interaction and a slight reduction in the band tail width.
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  • 文章访问数:  6131
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出版历程
  • 收稿日期:  1985-07-08
  • 刊出日期:  1986-03-05

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