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摘要: 利用MeV能量的准直质子束,在不同的质子能量下,测定了α-LiIO3单晶向的轴沟道参数角度半宽度ψ1/2和产额极小值χmin。在向静电场作用卞,首次观察到入射质子与表面处的Ⅰ原子沟道-背散射产额随电场作用时间而增加,并定量计算了表面无序Ⅰ原子数随静电场作用时间的关系。另外,入射质子与 7Li原子沟道-核反应[7Li(p,α)4He]产生的α粒子产额也随电场作用时间而增加。
Abstract: The 〈0001〉axial channeling parameters, axial half-angle ψ1/2 and minimum yield xmin, of α-LiIO3 crystal have been measured by collimated MeV proton beam at different beam energies. Under the action of an electrostatic field along the c-direction of the crystal, the increase of channeling-backscattering yield from the surface I atoms, proportional to the duration of electrostatic field action, has been observed. The time-dependence of the amount of the random surface I atoms has been calculated quantitatively for different durations of electrostatic field action. The increase of the α-particle yield from proton induced 7Li(P,a)4He reaction-channeling with the duration of electrostatic field action has been observed as well.