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摘要: 用偏压磁控溅射所制备得的非晶钆铽铁膜具有适用于磁光存储的材料参数。垂直膜面磁各向异性能常数随着偏压的增加而增加,借助于Johnson-Mehl-Avrami方程和Kissinger方程的计算,报道了非晶Gd27Tb10Fe63膜的晶化动力学参数,激活能△E=2.0电子伏,转变指数n=1。上述成份的GdTbFe膜的晶化温度、激活能都要高于二元系统的GdCo,GdFe膜,等温退火的结果表明,GdTbFe膜具有磁光存储应用所必须要求的较好的热稳定性。
Abstract: Prepared by using bias magnetron-sputtering, the deposited GdTbFe films possess the suitable parameters for magneto-optical recording. The perpendicular anisotropy constant Ku increases with the increase of bias voltage. By means of the plots from both Johnson-Mehl-Avrami equation and Kissinger equation, the parameters of crystallization kinetics, △E = 2.0eV and n = 1 have been determined for amorphouss Gd27Tb10Fe63 film. The crystallization temperature and active energy AE of the amorphous Gd27Tb10Fe63 film are greater than the binary system, GdCo, GdFe, for example. The isothermal annealing of amorphous Gd27Tb10Fe63 film at various temperature shows that it has a good thermal stability which is required for magneto-opticai recording application.